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                             22 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices M. I. Gorlov
2002
31 5 p. 295-304
10 p.
artikel
2 Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices Gorlov, M. I.
2002
31 5 p. 295-304
artikel
3 Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction E. M. Pashaev
2002
31 5 p. 310-317
8 p.
artikel
4 Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction Pashaev, E. M.
2002
31 5 p. 310-317
artikel
5 Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds E. I. Cherepov
2002
31 5 p. 277-281
5 p.
artikel
6 Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds Cherepov, E. I.
2002
31 5 p. 277-281
artikel
7 Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics V. A. Goryachev
2002
31 5 p. 326-334
9 p.
artikel
8 Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics Goryachev, V. A.
2002
31 5 p. 326-334
artikel
9 Instability Conditions of the Stationary Nonconducting State for the Bispin A. P. Lysenko
2002
31 5 p. 335-339
5 p.
artikel
10 Instability Conditions of the Stationary Nonconducting State for the Bispin Lysenko, A. P.
2002
31 5 p. 335-339
artikel
11 Isotropic Plasma Etching of SiO2 Films A. A. Kovalevskii
2002
31 5 p. 290-294
5 p.
artikel
12 Isotropic Plasma Etching of SiO2 Films Kovalevskii, A. A.
2002
31 5 p. 290-294
artikel
13 MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device E. V. Chernyavskii
2002
31 5 p. 318-322
5 p.
artikel
14 MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device Chernyavskii, E. V.
2002
31 5 p. 318-322
artikel
15 Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films V. G. Erkov
2002
31 5 p. 282-289
8 p.
artikel
16 Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films Erkov, V. G.
2002
31 5 p. 282-289
artikel
17 Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities F. F. Komarov
2002
31 5 p. 305-309
5 p.
artikel
18 Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities Komarov, F. F.
2002
31 5 p. 305-309
artikel
19 Trench-Gate MOS-Controlled Thyristor: An Evaluation E. V. Chernyavskii
2002
31 5 p. 323-325
3 p.
artikel
20 Trench-Gate MOS-Controlled Thyristor: An Evaluation Chernyavskii, E. V.
2002
31 5 p. 323-325
artikel
21 X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 xZnxTe E. M. Pashaev
2002
31 5 p. 271-276
6 p.
artikel
22 X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 – xZnxTe Pashaev, E. M.
2002
31 5 p. 271-276
artikel
                             22 gevonden resultaten
 
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