| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adsorption of diborane and hydrogen selenide on porous alumina and silica
|
TADAHARU WATANABE
|
|
1998
|
9 |
2 |
p. 127-132
6 p.
|
artikel
|
| 2 |
Adsorption of diborane and hydrogen selenide on porous alumina and silica
|
Watanabe, TADAHARU
|
|
1998
|
9 |
2 |
p. 127-132
|
artikel
|
| 3 |
Diffusion barriers in gold-metallized titanium-based contact structures on SiC
|
R WENZEL
|
|
1998
|
9 |
2 |
p. 109-113
5 p.
|
artikel
|
| 4 |
Diffusion barriers in gold-metallized titanium-based contact structures on SiC
|
Wenzel, R
|
|
1998
|
9 |
2 |
p. 109-113
|
artikel
|
| 5 |
Effect of CuOBaO mixture content on the grain growth of BaTiO3
|
CHENG-FU YANG
|
|
1998
|
9 |
2 |
p. 167-172
6 p.
|
artikel
|
| 6 |
Effect of CuO–BaO mixture content on the grain growth of BaTiO3
|
Yang, CHENG-FU
|
|
1998
|
9 |
2 |
p. 167-172
|
artikel
|
| 7 |
Effect of MgO addition on the electrical transport properties of highly Sb-doped BaTiO3 ceramics
|
BI-SHIOU CHIOU
|
|
1998
|
9 |
2 |
p. 145-150
6 p.
|
artikel
|
| 8 |
Effect of MgO addition on the electrical transport properties of highly Sb-doped BaTiO3 ceramics
|
Chiou, BI-SHIOU
|
|
1998
|
9 |
2 |
p. 145-150
|
artikel
|
| 9 |
Effect of reactive ion etching and post-etching annealing on the electrical characteristics of indium-tin oxide/silicon junctions
|
BI-SHIOU CHIOU
|
|
1998
|
9 |
2 |
p. 151-157
7 p.
|
artikel
|
| 10 |
Effect of reactive ion etching and post-etching annealing on the electrical characteristics of indium-tin oxide/silicon junctions
|
Chiou, BI-SHIOU
|
|
1998
|
9 |
2 |
p. 151-157
|
artikel
|
| 11 |
Effects of grain size on pyroelectric and dielectric properties of Pb0.9La0.1TiO3 ceramics
|
BYUNG-SUNG KANG
|
|
1998
|
9 |
2 |
p. 139-144
6 p.
|
artikel
|
| 12 |
Effects of grain size on pyroelectric and dielectric properties of Pb0.9La0.1TiO3 ceramics
|
Kang, BYUNG-SUNG
|
|
1998
|
9 |
2 |
p. 139-144
|
artikel
|
| 13 |
Electrical properties of the SnO2-based varistor
|
S. A PIANARO
|
|
1998
|
9 |
2 |
p. 159-165
7 p.
|
artikel
|
| 14 |
Electrical properties of the SnO2-based varistor
|
Pianaro, S. A
|
|
1998
|
9 |
2 |
p. 159-165
|
artikel
|
| 15 |
Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
|
YONGQIANG NING
|
|
1998
|
9 |
2 |
p. 121-125
5 p.
|
artikel
|
| 16 |
Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
|
Ning, YONGQIANG
|
|
1998
|
9 |
2 |
p. 121-125
|
artikel
|
| 17 |
Initial permeability studies on A13+ and Cr3+ substituted NiZn ferrites
|
A. M SANKPAL
|
|
1998
|
9 |
2 |
p. 173-179
7 p.
|
artikel
|
| 18 |
Initial permeability studies on A13+ and Cr3+ substituted Ni–Zn ferrites
|
Sankpal, A. M
|
|
1998
|
9 |
2 |
p. 173-179
|
artikel
|
| 19 |
Investigation of the effect of rare earth doping on the electrical and photovoltaic properties of chromotrope 2R thin film devices
|
G. D SHARMA
|
|
1998
|
9 |
2 |
p. 91-97
7 p.
|
artikel
|
| 20 |
Investigation of the effect of rare earth doping on the electrical and photovoltaic properties of chromotrope 2R thin film devices
|
Sharma, G. D
|
|
1998
|
9 |
2 |
p. 91-97
|
artikel
|
| 21 |
Metallization studies on Ti3SiC2-based contacts on 6H-SiC
|
F GOESMANN
|
|
1998
|
9 |
2 |
p. 103-107
5 p.
|
artikel
|
| 22 |
Metallization studies on Ti3SiC2-based contacts on 6H-SiC
|
Goesmann, F
|
|
1998
|
9 |
2 |
p. 103-107
|
artikel
|
| 23 |
Study of surface topography and optical properties of Ge15Bi38Se47 films
|
T RAJAGOPALAN
|
|
1998
|
9 |
2 |
p. 133-137
5 p.
|
artikel
|
| 24 |
Study of surface topography and optical properties of Ge15Bi38Se47 films
|
Rajagopalan, T
|
|
1998
|
9 |
2 |
p. 133-137
|
artikel
|
| 25 |
Superconducting properties of 1212 phase in (Tl, M) Sr2(Ca1-xCrx)Cu2O7 (M=Zr and Ce)
|
R ABD-SHUKOR
|
|
1998
|
9 |
2 |
p. 99-102
4 p.
|
artikel
|
| 26 |
Superconducting properties of 1212 phase in (Tl, M) Sr2(Ca1-xCrx)Cu2O7 (M=Zr and Ce)
|
Abd-SHUKOR, R
|
|
1998
|
9 |
2 |
p. 99-102
|
artikel
|
| 27 |
Thermal etching of GaAs (1 1 3) surfaces
|
S. M SCHOLZ
|
|
1998
|
9 |
2 |
p. 115-119
5 p.
|
artikel
|
| 28 |
Thermal etching of GaAs (1 1 3) surfaces
|
Scholz, S. M
|
|
1998
|
9 |
2 |
p. 115-119
|
artikel
|
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