| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Cubic CdS thin films studied by spectroscopic ellipsometry
|
J. L MARTINEZ
|
|
1997
|
8 |
6 |
p. 399-403
5 p.
|
artikel
|
| 2 |
Cubic CdS thin films studied by spectroscopic ellipsometry
|
MARTINEZ , J. L
|
|
1997
|
8 |
6 |
p. 399-403
|
artikel
|
| 3 |
Effect of negative bias voltage on the microstructures of AlN thin films fabricated by reactive r.f. magnetron sputtering
|
HWAN-CHUL LEE
|
|
1997
|
8 |
6 |
p. 385-390
6 p.
|
artikel
|
| 4 |
Effect of negative bias voltage on the microstructures of AlN thin films fabricated by reactive r.f. magnetron sputtering
|
LEE , HWAN-CHUL
|
|
1997
|
8 |
6 |
p. 385-390
|
artikel
|
| 5 |
Effect of strong illumination on currentvoltage characteristics of Au/Si, Al/Si and Sn/Si Schottky barriers with native oxide layer
|
W. I HAMDI
|
|
1997
|
8 |
6 |
p. 409-418
10 p.
|
artikel
|
| 6 |
Effect of strong illumination on current–voltage characteristics of Au/Si, Al/Si and Sn/Si Schottky barriers with native oxide layer
|
HAMDI , W. I
|
|
1997
|
8 |
6 |
p. 409-418
|
artikel
|
| 7 |
Influence of substrate temperature on the texture and superconducting properties of thin films of YBa2Cu3O7-x on (1 0 0) YSZ substrates prepared by glow discharge sputtering
|
P KUPPUSAMI
|
|
1997
|
8 |
6 |
p. 391-398
8 p.
|
artikel
|
| 8 |
Influence of substrate temperature on the texture and superconducting properties of thin films of YBa2Cu3O7-x on (1 0 0) YSZ substrates prepared by glow discharge sputtering
|
KUPPUSAMI , P
|
|
1997
|
8 |
6 |
p. 391-398
|
artikel
|
| 9 |
Preparation of solder bumps incorporating electroless nickelboron deposit and investigation on the interfacial interaction behaviour and wetting kinetics
|
CHWAN-YING LEE
|
|
1997
|
8 |
6 |
p. 377-383
7 p.
|
artikel
|
| 10 |
Preparation of solder bumps incorporating electroless nickel–boron deposit and investigation on the interfacial interaction behaviour and wetting kinetics
|
LEE , CHWAN-YING
|
|
1997
|
8 |
6 |
p. 377-383
|
artikel
|
| 11 |
Strain and strain relaxation in semiconductors
|
D. J DUNSTAN
|
|
1997
|
8 |
6 |
p. 337-375
39 p.
|
artikel
|
| 12 |
Strain and strain relaxation in semiconductors
|
DUNSTAN , D. J
|
|
1997
|
8 |
6 |
p. 337-375
|
artikel
|
| 13 |
The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition
|
JIN XIAOJUN
|
|
1997
|
8 |
6 |
p. 405-408
4 p.
|
artikel
|
| 14 |
The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition
|
XIAOJUN , JIN
|
|
1997
|
8 |
6 |
p. 405-408
|
artikel
|
| 15 |
Two-stage photoquenching in AuSi diode with native oxide layer illuminated by intense light
|
W. I HAMDI
|
|
1997
|
8 |
6 |
p. 419-426
8 p.
|
artikel
|
| 16 |
Two-stage photoquenching in Au–Si diode with native oxide layer illuminated by intense light
|
HAMDI , W. I
|
|
1997
|
8 |
6 |
p. 419-426
|
artikel
|
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