| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio investigation of boron diffusion paths in germanium
|
Janke, C.
|
|
|
18 |
7 |
p. 775-780
|
artikel
|
| 2 |
Ab initio investigation of charge transfer technique for control of Schottky contacts in CNTs
|
Casterman, D.
|
|
|
18 |
7 |
p. 729-734
|
artikel
|
| 3 |
A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon
|
Huang, Y. L.
|
|
|
18 |
7 |
p. 705-710
|
artikel
|
| 4 |
Analysis of the (100)Si/LaAlO3 structure by electron spin resonance: nature of the interface
|
Clémer, K.
|
|
|
18 |
7 |
p. 735-741
|
artikel
|
| 5 |
Atomic scale simulations of donor–vacancy pairs in germanium
|
Chroneos, A.
|
|
|
18 |
7 |
p. 763-768
|
artikel
|
| 6 |
Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments
|
Pereira, M. F.
|
|
|
18 |
7 |
p. 689-694
|
artikel
|
| 7 |
Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures
|
Emtsev, V. V.
|
|
|
18 |
7 |
p. 711-714
|
artikel
|
| 8 |
Doped silicon under uniaxial tensile strain investigated by PAC
|
Santen, Nicole
|
|
|
18 |
7 |
p. 715-719
|
artikel
|
| 9 |
Early stage donor-vacancy clusters in germanium
|
Coutinho, José
|
|
|
18 |
7 |
p. 769-773
|
artikel
|
| 10 |
Editorial
|
Evans-Freeman, Jan
|
|
|
18 |
7 |
p. 681
|
artikel
|
| 11 |
EPR characterization of defects in m-HfO2
|
Wright, Sandra
|
|
|
18 |
7 |
p. 743-746
|
artikel
|
| 12 |
Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation
|
Emtsev, V. V.
|
|
|
18 |
7 |
p. 701-704
|
artikel
|
| 13 |
Germanium content dependence of the leakage current of recessed SiGe source/drain junctions
|
Simoen, Eddy Roger
|
|
|
18 |
7 |
p. 787-791
|
artikel
|
| 14 |
High boron incorporation in selective epitaxial growth of SiGe layers
|
Ghandi, R.
|
|
|
18 |
7 |
p. 747-751
|
artikel
|
| 15 |
Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium
|
Lauwaert, J.
|
|
|
18 |
7 |
p. 793-797
|
artikel
|
| 16 |
Infrared absorption spectra of defects in carbon doped neutron-irradiated Si
|
Londos, C. A.
|
|
|
18 |
7 |
p. 721-728
|
artikel
|
| 17 |
Iron-aluminium pair reconfiguration processes in SiGe alloys
|
Kruszewski, P.
|
|
|
18 |
7 |
p. 759-762
|
artikel
|
| 18 |
Lifetime and leakage current considerations in metal-doped germanium
|
Simoen, E.
|
|
|
18 |
7 |
p. 799-804
|
artikel
|
| 19 |
Local vibrational modes of N2−On defects in Cz-Silicon
|
Fujita, Naomi
|
|
|
18 |
7 |
p. 683-687
|
artikel
|
| 20 |
Oxygen defects in irradiated germanium
|
Carvalho, A.
|
|
|
18 |
7 |
p. 781-786
|
artikel
|
| 21 |
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si
|
Coleman, P. G.
|
|
|
18 |
7 |
p. 695-700
|
artikel
|
| 22 |
The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient
|
Abdulmalik, D. A.
|
|
|
18 |
7 |
p. 753-757
|
artikel
|
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