| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate modeling of Metal/HfO2/Si capacitors
|
Ruiz, Francisco G.
|
|
2008
|
7 |
3 |
p. 155-158
|
artikel
|
| 2 |
A direct solution method for carrier transport using Markov process representation
|
Yang, Liu
|
|
2008
|
7 |
3 |
p. 248-251
|
artikel
|
| 3 |
A fast solver for hole inversion layers with an efficient 2D -space discretization
|
Pham, Anh-Tuan
|
|
|
7 |
3 |
p. 99-102
|
artikel
|
| 4 |
A fast $\vec{k}\cdot\vec{p}$ solver for hole inversion layers with an efficient 2D $\vec{k}$-space discretization
|
Pham, Anh-Tuan
|
|
2007
|
7 |
3 |
p. 99-102
|
artikel
|
| 5 |
A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor
|
Martinez, A.
|
|
2008
|
7 |
3 |
p. 359-362
|
artikel
|
| 6 |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
|
Sorée, Bart
|
|
2008
|
7 |
3 |
p. 380-383
|
artikel
|
| 7 |
An atomistic quantum transport solver with dephasing for field-effect transistors
|
Raza, Hassan
|
|
2008
|
7 |
3 |
p. 423-426
|
artikel
|
| 8 |
A new approach to analyzing anisotropic and non-parabolic effects on quantum wires
|
Gómez-Campos, F. M.
|
|
2008
|
7 |
3 |
p. 342-345
|
artikel
|
| 9 |
An extended Hückel theory based atomistic model for graphene nanoelectronics
|
Raza, Hassan
|
|
|
7 |
3 |
p. 372-375
|
artikel
|
| 10 |
An extended Hückel theory based atomistic model for graphene nanoelectronics
|
Raza, Hassan
|
|
2008
|
7 |
3 |
p. 372-375
|
artikel
|
| 11 |
An improved hydrodynamic model describing heat generation and transport in submicron silicon devices
|
Muscato, O.
|
|
2008
|
7 |
3 |
p. 142-145
|
artikel
|
| 12 |
Anisotropic dopant diffusion in Si under stress using both continuum and atomistic methods
|
Martin-Bragado, I.
|
|
2008
|
7 |
3 |
p. 103-106
|
artikel
|
| 13 |
Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs
|
Minari, Hideki
|
|
|
7 |
3 |
p. 293-296
|
artikel
|
| 14 |
Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs
|
Minari, Hideki
|
|
2007
|
7 |
3 |
p. 293-296
|
artikel
|
| 15 |
Atomistic non-equilibrium Green’s function simulations of Graphene nano-ribbons in the quantum hall regime
|
Golizadeh-Mojarad, Roksana
|
|
|
7 |
3 |
p. 407-410
|
artikel
|
| 16 |
Atomistic non-equilibrium Green’s function simulations of Graphene nano-ribbons in the quantum hall regime
|
Golizadeh-Mojarad, Roksana
|
|
2008
|
7 |
3 |
p. 407-410
|
artikel
|
| 17 |
Boltzman transport simulation of single-walled carbon nanotubes
|
Aksamija, Zlatan
|
|
2008
|
7 |
3 |
p. 315-318
|
artikel
|
| 18 |
Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations
|
Riddet, Craig
|
|
2008
|
7 |
3 |
p. 231-235
|
artikel
|
| 19 |
Boundary conditions with Pauli exclusion and charge neutrality: application to the Monte Carlo simulation of ballistic nanoscale devices
|
López, H.
|
|
2008
|
7 |
3 |
p. 213-216
|
artikel
|
| 20 |
Calculation of Fin width for bulk inversion in Si FinFET by applying supersymmetry
|
Shishir, Razib
|
|
2008
|
7 |
3 |
p. 305-308
|
artikel
|
| 21 |
Can silicon FinFETs satisfy ITRS projections for high performance 10 nm devices?
|
Khan, H.
|
|
2008
|
7 |
3 |
p. 284-287
|
artikel
|
| 22 |
Capacitance fluctuations in bulk MOSFETs due to random discrete dopants
|
Brown, Andrew R.
|
|
|
7 |
3 |
p. 115-118
|
artikel
|
| 23 |
Capacitance fluctuations in bulk MOSFETs due to random discrete dopants
|
Brown, Andrew R.
|
|
2008
|
7 |
3 |
p. 115-118
|
artikel
|
| 24 |
Capacitance variability of short range interconnects
|
Drysdale, Timothy D.
|
|
|
7 |
3 |
p. 124-127
|
artikel
|
| 25 |
Capacitance variability of short range interconnects
|
Drysdale, Timothy D.
|
|
2007
|
7 |
3 |
p. 124-127
|
artikel
|
| 26 |
CMOS performance enhancement in Hybrid Orientation Technologies
|
Maiti, Tapas Kumar
|
|
2008
|
7 |
3 |
p. 181-186
|
artikel
|
| 27 |
Comparison of calculated and measured I–V curves for DNA
|
Inoue, Tomoharu
|
|
|
7 |
3 |
p. 256-258
|
artikel
|
| 28 |
Comparison of calculated and measured I–V curves for DNA
|
Inoue, Tomoharu
|
|
2008
|
7 |
3 |
p. 256-258
|
artikel
|
| 29 |
Component variability as a limit in digital electronics
|
Keyes, Robert W.
|
|
|
7 |
3 |
p. 449-453
|
artikel
|
| 30 |
Component variability as a limit in digital electronics
|
Keyes, Robert W.
|
|
2008
|
7 |
3 |
p. 449-453
|
artikel
|
| 31 |
Computational study of double-gate graphene nano-ribbon transistors
|
Liang, Gengchiau
|
|
2008
|
7 |
3 |
p. 394-397
|
artikel
|
| 32 |
Confined phonon scattering in multivalley Monte Carlo simulation of quantum cascade lasers
|
Gao, X.
|
|
|
7 |
3 |
p. 209-212
|
artikel
|
| 33 |
Confined phonon scattering in multivalley Monte Carlo simulation of quantum cascade lasers
|
Gao, X.
|
|
2008
|
7 |
3 |
p. 209-212
|
artikel
|
| 34 |
Consistency of boundary conditions in nonequilibrium Green’s function simulations
|
Sato, Suguru
|
|
2008
|
7 |
3 |
p. 301-304
|
artikel
|
| 35 |
Contact-induced decoherence in nanodevices
|
Knezevic, I.
|
|
2008
|
7 |
3 |
p. 276-279
|
artikel
|
| 36 |
Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires
|
Ramayya, E. B.
|
|
2008
|
7 |
3 |
p. 319-323
|
artikel
|
| 37 |
Current and information in the microcanonical picture of nanoscale transport
|
Ercan, Ilke
|
|
2008
|
7 |
3 |
p. 466-470
|
artikel
|
| 38 |
Design of random doping fluctuation resistant structures of semiconductor devices
|
Oniciuc, Liviu
|
|
2008
|
7 |
3 |
p. 111-114
|
artikel
|
| 39 |
Discontinuous Galerkin solver for Boltzmann-Poisson transients
|
Cheng, Yingda
|
|
2008
|
7 |
3 |
p. 119-123
|
artikel
|
| 40 |
3D Monte Carlo analysis of potential fluctuations under high electron concentrations
|
Uechi, Tadayoshi
|
|
2008
|
7 |
3 |
p. 240-243
|
artikel
|
| 41 |
3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET
|
Mohamed, Mohamed
|
|
2008
|
7 |
3 |
p. 217-221
|
artikel
|
| 42 |
3-D self-consistent Schrödinger-Poisson solver: the spectral element method
|
Cheng, Candong
|
|
2008
|
7 |
3 |
p. 337-341
|
artikel
|
| 43 |
Effect of band warping and wafer orientation on NMOS mobility under arbitrary applied stress
|
Kotlyar, R.
|
|
|
7 |
3 |
p. 95-98
|
artikel
|
| 44 |
Effect of band warping and wafer orientation on NMOS mobility under arbitrary applied stress
|
Kotlyar, R.
|
|
2007
|
7 |
3 |
p. 95-98
|
artikel
|
| 45 |
Effect of magnetic field on shot noise in diffusive conductors and cascaded barriers
|
Macucci, Massimo
|
|
2008
|
7 |
3 |
p. 272-275
|
artikel
|
| 46 |
Effect of strains on anisotropic material transport in copper interconnect structures under electromigration stress
|
Lacerda de Orio, Roberto
|
|
2008
|
7 |
3 |
p. 128-131
|
artikel
|
| 47 |
Effects of phonon scattering on electron transport in double-gate MOSFETs
|
Mori, Nobuya
|
|
2008
|
7 |
3 |
p. 268-271
|
artikel
|
| 48 |
Effects of scattering resonances on carrier-carrier entanglement in charged quantum dots
|
Buscemi, Fabrizio
|
|
|
7 |
3 |
p. 263-267
|
artikel
|
| 49 |
Effects of scattering resonances on carrier-carrier entanglement in charged quantum dots
|
Buscemi, Fabrizio
|
|
2007
|
7 |
3 |
p. 263-267
|
artikel
|
| 50 |
Efficient modeling techniques for atomistic-based electronic density calculations
|
Zhang, Deyin
|
|
|
7 |
3 |
p. 427-431
|
artikel
|
| 51 |
Efficient modeling techniques for atomistic-based electronic density calculations
|
Zhang, Deyin
|
|
2008
|
7 |
3 |
p. 427-431
|
artikel
|
| 52 |
Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D
|
Naumov, M.
|
|
2008
|
7 |
3 |
p. 297-300
|
artikel
|
| 53 |
Electronic structure and transmission characteristics of SiGe nanowires
|
Kharche, Neerav
|
|
|
7 |
3 |
p. 350-354
|
artikel
|
| 54 |
Electronic structure and transmission characteristics of SiGe nanowires
|
Kharche, Neerav
|
|
2008
|
7 |
3 |
p. 350-354
|
artikel
|
| 55 |
Electron subband dispersions in ultra-thin silicon films from a two-band k⋅p theory
|
Sverdlov, Viktor
|
|
|
7 |
3 |
p. 164-167
|
artikel
|
| 56 |
Electron subband dispersions in ultra-thin silicon films from a two-band k⋅p theory
|
Sverdlov, Viktor
|
|
2008
|
7 |
3 |
p. 164-167
|
artikel
|
| 57 |
Electrothermal analysis of AlGaN/GaN high electron mobility transistors
|
Sridharan, Sriraaman
|
|
2008
|
7 |
3 |
p. 236-239
|
artikel
|
| 58 |
Field-coupled computing in magnetic multilayers
|
Csaba, György
|
|
|
7 |
3 |
p. 454-457
|
artikel
|
| 59 |
Field-coupled computing in magnetic multilayers
|
Csaba, György
|
|
2007
|
7 |
3 |
p. 454-457
|
artikel
|
| 60 |
First principle study of stress effects on indium diffusion in uniaxially and biaxially strained silicon
|
Kim, Young-Kyu
|
|
2008
|
7 |
3 |
p. 411-414
|
artikel
|
| 61 |
Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
|
Vitobello, Fabio
|
|
2008
|
7 |
3 |
p. 244-247
|
artikel
|
| 62 |
Full-band quantum transport in nanowire transistors
|
Luisier, Mathieu
|
|
|
7 |
3 |
p. 309-314
|
artikel
|
| 63 |
Full-band quantum transport in nanowire transistors
|
Luisier, Mathieu
|
|
2008
|
7 |
3 |
p. 309-314
|
artikel
|
| 64 |
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT
|
Buran, C.
|
|
2008
|
7 |
3 |
p. 328-331
|
artikel
|
| 65 |
Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs
|
Khan, H.
|
|
2008
|
7 |
3 |
p. 346-349
|
artikel
|
| 66 |
Hierarchical simulation of transport in silicon nanowire transistors
|
Marconcini, Paolo
|
|
2008
|
7 |
3 |
p. 415-418
|
artikel
|
| 67 |
High field emission efficiency surface conduction electron emitters
|
Li, Yiming
|
|
|
7 |
3 |
p. 440-444
|
artikel
|
| 68 |
High field emission efficiency surface conduction electron emitters
|
Li, Yiming
|
|
2008
|
7 |
3 |
p. 440-444
|
artikel
|
| 69 |
Impact-ionization coefficient in silicon at high fields— a parametric approach
|
Rudan, M.
|
|
2008
|
7 |
3 |
p. 151-154
|
artikel
|
| 70 |
Investigation of boron diffusion after pre-amorphization implant with kinetic Monte Carlo approach
|
Park, Soon-Yeol
|
|
2008
|
7 |
3 |
p. 419-422
|
artikel
|
| 71 |
Joule heating in molecular tunnel junctions: application to C60
|
Pecchia, Alessandro
|
|
2008
|
7 |
3 |
p. 384-389
|
artikel
|
| 72 |
MC simulation of double-resonant-phonon depopulation THz QCLs for high operating temperatures
|
Jirauschek, Christian
|
|
2008
|
7 |
3 |
p. 436-439
|
artikel
|
| 73 |
Modeling thermal effects in nano-devices
|
Raleva, Katerina
|
|
2008
|
7 |
3 |
p. 226-230
|
artikel
|
| 74 |
Monte Carlo simulation of electron mobility in strained Si DG-FETs with TB bandstructure calculation
|
Guan, Ximeng
|
|
2008
|
7 |
3 |
p. 192-196
|
artikel
|
| 75 |
Monte Carlo simulation of low-field mobility in strained double gate SOI transistors
|
Gámiz, F.
|
|
|
7 |
3 |
p. 205-208
|
artikel
|
| 76 |
Monte Carlo simulation of low-field mobility in strained double gate SOI transistors
|
Gámiz, F.
|
|
2007
|
7 |
3 |
p. 205-208
|
artikel
|
| 77 |
Monte Carlo simulation of polaron transport in DNA
|
Yamanaka, Takayuki
|
|
|
7 |
3 |
p. 252-255
|
artikel
|
| 78 |
Monte Carlo simulation of polaron transport in DNA
|
Yamanaka, Takayuki
|
|
2007
|
7 |
3 |
p. 252-255
|
artikel
|
| 79 |
Monte Carlo simulations of nanometric devices beyond the “mean-field” approximation
|
Albareda, G.
|
|
2008
|
7 |
3 |
p. 197-200
|
artikel
|
| 80 |
Multiscale simulation of MOS systems based on high-κ oxides
|
Auf der Maur, Matthias
|
|
|
7 |
3 |
p. 398-402
|
artikel
|
| 81 |
Multiscale simulation of MOS systems based on high-κ oxides
|
Auf der Maur, Matthias
|
|
2007
|
7 |
3 |
p. 398-402
|
artikel
|
| 82 |
NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs
|
Kalna, Karol
|
|
2008
|
7 |
3 |
p. 288-292
|
artikel
|
| 83 |
NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport
|
Muralidharan, Bhaskaran
|
|
2008
|
7 |
3 |
p. 403-406
|
artikel
|
| 84 |
Noise reduction in analogue computation of Drosophila photoreceptors
|
Nikolic, Konstantin
|
|
|
7 |
3 |
p. 458-461
|
artikel
|
| 85 |
Noise reduction in analogue computation of Drosophila photoreceptors
|
Nikolic, Konstantin
|
|
2008
|
7 |
3 |
p. 458-461
|
artikel
|
| 86 |
Non-equilibrium quantum transport theory: current and gain in quantum cascade lasers
|
Kubis, Tillmann
|
|
|
7 |
3 |
p. 432-435
|
artikel
|
| 87 |
Non-equilibrium quantum transport theory: current and gain in quantum cascade lasers
|
Kubis, Tillmann
|
|
2007
|
7 |
3 |
p. 432-435
|
artikel
|
| 88 |
Numerical simulation of electronic transport in zigzag-edged graphene nano-ribbon devices
|
Souma, Satofumi
|
|
2008
|
7 |
3 |
p. 390-393
|
artikel
|
| 89 |
Numerical simulation on novel FinFETs: asymmetric poly-silicon gate FinFETs and TiN gate FinFETs
|
Kim, Han-Geon
|
|
2008
|
7 |
3 |
p. 132-137
|
artikel
|
| 90 |
Parameter modeling for higher-order transport models in UTB SOI MOSFETs
|
Vasicek, Martin
|
|
2008
|
7 |
3 |
p. 168-171
|
artikel
|
| 91 |
Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
|
Liao, Sicheng
|
|
|
7 |
3 |
p. 462-465
|
artikel
|
| 92 |
Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
|
Liao, Sicheng
|
|
2008
|
7 |
3 |
p. 462-465
|
artikel
|
| 93 |
Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET
|
Seoane, Natalia
|
|
2008
|
7 |
3 |
p. 159-163
|
artikel
|
| 94 |
Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers
|
Zhang, Yan
|
|
|
7 |
3 |
p. 176-180
|
artikel
|
| 95 |
Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers
|
Zhang, Yan
|
|
2007
|
7 |
3 |
p. 176-180
|
artikel
|
| 96 |
Semiclassical transport in silicon nanowire FETs including surface roughness
|
Lenzi, M.
|
|
2008
|
7 |
3 |
p. 355-358
|
artikel
|
| 97 |
Semi-discrete 2D Wigner-particle approach
|
Nedjalkov, Mihail
|
|
2008
|
7 |
3 |
p. 222-225
|
artikel
|
| 98 |
Sharpened Aharanov-Bohm oscillations near resonance in a balanced ring with double quantum dots
|
Hedin, Eric R.
|
|
2008
|
7 |
3 |
p. 280-283
|
artikel
|
| 99 |
Simulation of non-equilibrium electron transport in silicon quantum wires
|
Ossig, Gerald
|
|
2008
|
7 |
3 |
p. 371
|
artikel
|
| 100 |
Simulation of non-equilibrium electron transport in silicon quantum wires
|
Ossig, Gerald
|
|
2008
|
7 |
3 |
p. 367-370
|
artikel
|
| 101 |
Simulation of non-equilibrium electron transport in silicon quantum wires
|
Ossig, Gerald
|
|
|
7 |
3 |
p. 371
|
artikel
|
| 102 |
Simulation of phonon-limited mobility for nano-scale Si-based n-type non-planar device under general orientation and stress condition
|
Xiu, Kai
|
|
|
7 |
3 |
p. 172-175
|
artikel
|
| 103 |
Simulation of phonon-limited mobility for nano-scale Si-based n-type non-planar device under general orientation and stress condition
|
Xiu, Kai
|
|
2007
|
7 |
3 |
p. 172-175
|
artikel
|
| 104 |
Simulation of ZnO diodes for application in non-volatile crossbar memories
|
Pra, Michele
|
|
|
7 |
3 |
p. 146-150
|
artikel
|
| 105 |
Simulation of ZnO diodes for application in non-volatile crossbar memories
|
Pra, Michele
|
|
2008
|
7 |
3 |
p. 146-150
|
artikel
|
| 106 |
Simulations of nanowire transistors: atomistic vs. effective mass models
|
Neophytou, Neophytos
|
|
2008
|
7 |
3 |
p. 363-366
|
artikel
|
| 107 |
Surface roughness induced device variability: 3D ab initio Monte Carlo simulation study
|
Alexander, Craig L.
|
|
2008
|
7 |
3 |
p. 107-110
|
artikel
|
| 108 |
Temperature dependence on the contact size of GeSbTe films for phase change memories
|
Li, Yiming
|
|
2008
|
7 |
3 |
p. 138-141
|
artikel
|
| 109 |
Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs
|
Aldegunde, M.
|
|
2008
|
7 |
3 |
p. 201-204
|
artikel
|
| 110 |
The effect of dielectric mismatch on excitons and trions in cylindrical semiconductor nanowires
|
Slachmuylders, A.
|
|
2008
|
7 |
3 |
p. 376-379
|
artikel
|
| 111 |
Three-dimensional simulation of field emission triode structure using carbon-nanotube emitters
|
Li, Yiming
|
|
2008
|
7 |
3 |
p. 332-336
|
artikel
|
| 112 |
Towards the global modeling of InGaAs-based pseudomorphic HEMTs
|
Ayubi-Moak, J. S.
|
|
2008
|
7 |
3 |
p. 187-191
|
artikel
|
| 113 |
Transmission coefficients for minibands formed in quantum dot arrays under bias
|
Sun, K.
|
|
|
7 |
3 |
p. 445-448
|
artikel
|
| 114 |
Transmission coefficients for minibands formed in quantum dot arrays under bias
|
Sun, K.
|
|
2008
|
7 |
3 |
p. 445-448
|
artikel
|
| 115 |
Transport in open quantum systems: comparing classical and quantum phase space dynamics
|
Ferry, D. K.
|
|
|
7 |
3 |
p. 259-262
|
artikel
|
| 116 |
Transport in open quantum systems: comparing classical and quantum phase space dynamics
|
Ferry, D. K.
|
|
2008
|
7 |
3 |
p. 259-262
|
artikel
|
| 117 |
Transport in silicon nanowires: role of radial dopant profile
|
Markussen, Troels
|
|
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7 |
3 |
p. 324-327
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artikel
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| 118 |
Transport in silicon nanowires: role of radial dopant profile
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Markussen, Troels
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2007
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7 |
3 |
p. 324-327
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artikel
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Tijdschrift beschrijving