| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
|
M’foukh, Adel
|
|
|
22 |
5 |
p. 1257-1263
|
artikel
|
| 2 |
A deterministic Wigner transport equation solver with infinite correlation length
|
Kim, Kyoung Yeon
|
|
|
22 |
5 |
p. 1377-1395
|
artikel
|
| 3 |
Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET
|
Saritha, N. R.
|
|
|
22 |
5 |
p. 1423-1432
|
artikel
|
| 4 |
Compact drain current model of a double-gate raised buried oxide TFET for integrated circuit application
|
Meriga, Sirisha
|
|
|
22 |
5 |
p. 1443-1452
|
artikel
|
| 5 |
Comparative study of multi-physics generated small dipoles in conducting media
|
Zhou, Sai
|
|
|
22 |
5 |
p. 1576-1586
|
artikel
|
| 6 |
Deep-learning-based neural network for design of a dual-band coupled-line trans-directional coupler
|
Sallam, Tarek
|
|
|
22 |
5 |
p. 1587-1593
|
artikel
|
| 7 |
Design considerations for engineering HfS2 negative capacitance FET through multilayered channel and Hf1-xZrxO2/HfO2 double-gate stacks: an ab initio and NEGF study
|
Sritharan, Mayuri
|
|
|
22 |
5 |
p. 1338-1349
|
artikel
|
| 8 |
DFTBephy: A DFTB-based approach for electron–phonon coupling calculations
|
Croy, Alexander
|
|
|
22 |
5 |
p. 1231-1239
|
artikel
|
| 9 |
3D modeling of feature-scale fluorocarbon plasma etching in silica
|
Rodrigues, Frâncio
|
|
|
22 |
5 |
p. 1558-1563
|
artikel
|
| 10 |
Efficient device simulations using density functional theory Hamiltonian and non-equilibrium Green’s function: heterostructure mode space method and core charge approximation
|
Jeon, Seonghyeok
|
|
|
22 |
5 |
p. 1167-1180
|
artikel
|
| 11 |
Electronic structure and optical and thermoelectric response of lead-free double perovskite BaMgLaBiO6: a first-principles study
|
Munir, Junaid
|
|
|
22 |
5 |
p. 1482-1494
|
artikel
|
| 12 |
Electronic, transport and ballistic device properties of quasi-one-dimensional GeS
|
Matić, Mislav
|
|
|
22 |
5 |
p. 1350-1362
|
artikel
|
| 13 |
Electronic transport computation in thermoelectric materials: from ab initio scattering rates to nanostructures
|
Neophytou, Neophytos
|
|
|
22 |
5 |
p. 1264-1280
|
artikel
|
| 14 |
Electrothermal properties of 2D materials in device applications
|
Klein, Samantha
|
|
|
22 |
5 |
p. 1310-1318
|
artikel
|
| 15 |
Finite-element simulation of interfacial resistive switching by Schottky barrier height modulation
|
Khot, Sagar
|
|
|
22 |
5 |
p. 1453-1462
|
artikel
|
| 16 |
Full charge incorporation in ab initio simulations of two-dimensional semiconductor-based devices
|
Duflou, Rutger
|
|
|
22 |
5 |
p. 1202-1214
|
artikel
|
| 17 |
Integral equation method for the 1D steady-state Poisson-Nernst-Planck equations
|
Chao, Zhen
|
|
|
22 |
5 |
p. 1396-1408
|
artikel
|
| 18 |
Large-signal behavior modeling of GaN HEMTs using SSA augmented ELM algorithm
|
Wang, Shaowei
|
|
|
22 |
5 |
p. 1415-1422
|
artikel
|
| 19 |
Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET
|
Manjula, M. Muthu
|
|
|
22 |
5 |
p. 1433-1442
|
artikel
|
| 20 |
Microwave properties of a double wire array
|
Rybin, Oleg
|
|
|
22 |
5 |
p. 1541-1548
|
artikel
|
| 21 |
Modeling of inversion layer capacitance of III-V double gate MOSFETs using a neural network-based regression technique
|
Maity, Subir Kumar
|
|
|
22 |
5 |
p. 1472-1481
|
artikel
|
| 22 |
Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation
|
Gopalan, Sanjay
|
|
|
22 |
5 |
p. 1240-1256
|
artikel
|
| 23 |
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite
|
Marian, Damiano
|
|
|
22 |
5 |
p. 1327-1337
|
artikel
|
| 24 |
Numerical simulation of a mixed-halide perovskite solar cell using doping gradient
|
Ritu,
|
|
|
22 |
5 |
p. 1532-1540
|
artikel
|
| 25 |
On a method of treating polar-optical phonons in real space
|
Ferry, D. K.
|
|
|
22 |
5 |
p. 1495-1499
|
artikel
|
| 26 |
Optical designing and simulation of a concentrating solar spectrum splitting prototype
|
Rdhaounia, Elhem
|
|
|
22 |
5 |
p. 1522-1531
|
artikel
|
| 27 |
Recursive Green’s functions optimized for atomistic modelling of large superlattice-based devices
|
Nguyen, V. Hung
|
|
|
22 |
5 |
p. 1215-1230
|
artikel
|
| 28 |
Research on high sensitivity fano resonance sensing based on MIM waveguide coupled with double Fibonacci spirals
|
Qu, Desheng
|
|
|
22 |
5 |
p. 1500-1506
|
artikel
|
| 29 |
Resistance saturation in semi-conducting polyacetylene molecular wires
|
Valli, Angelo
|
|
|
22 |
5 |
p. 1363-1376
|
artikel
|
| 30 |
RSDFT-NEGF transport simulations in realistic nanoscale transistors
|
Mil’nikov, Gennady
|
|
|
22 |
5 |
p. 1181-1201
|
artikel
|
| 31 |
Semiclassical electron and phonon transport from first principles: application to layered thermoelectrics
|
Chaves, Anderson S.
|
|
|
22 |
5 |
p. 1281-1309
|
artikel
|
| 32 |
Simulation and dynamical analysis of a chaotic chameleon system designed for an electronic circuit
|
Abro, Kashif Ali
|
|
|
22 |
5 |
p. 1564-1575
|
artikel
|
| 33 |
Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric
|
Zhang, Aohang
|
|
|
22 |
5 |
p. 1463-1471
|
artikel
|
| 34 |
Special issue on ab initio simulations of electron and phonon transport in nanostructures
|
Luisier, Mathieu
|
|
|
22 |
5 |
p. 1165-1166
|
artikel
|
| 35 |
Stable two-dimensional Na decorated BeN4: a potential candidate for hydrogen storage
|
Hussain, Shakaib
|
|
|
22 |
5 |
p. 1409-1414
|
artikel
|
| 36 |
Supercontinuum spectra above 2700 nm in circular lattice photonic crystal fiber infiltrated chloroform with the low peak power
|
Thi, Thuy Nguyen
|
|
|
22 |
5 |
p. 1507-1521
|
artikel
|
| 37 |
Terahertz conductivity of monolayer MoS2
|
Mitra, S.
|
|
|
22 |
5 |
p. 1319-1326
|
artikel
|
| 38 |
Transformed mathematical model of square microstrip antennas for non-sinusoidal harmonic response
|
Shri Gyan, Deepankar
|
|
|
22 |
5 |
p. 1549-1557
|
artikel
|
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