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                             15 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A first-principles investigation of electronic structure and ferromagnetic properties in alkali metal-doped ZnS/Se semiconductors Adli, W.

21 5 p. 1061-1069
artikel
2 A new strategy: A more valid determination of the nonlinear optical parameters for optoelectronic applications Gomaa, Hosam M.

21 5 p. 1174-1179
artikel
3 Correction to: Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension Calado, Philip

21 5 p. 1189
artikel
4 Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser Kong, Senlin

21 5 p. 1116-1126
artikel
5 Electronic, magnetic and thermoelectric properties of Nb-substituted Fe2TiO5 pseudobrookite compound: Ab initio study Mohammadi, Mahnaz

21 5 p. 1070-1078
artikel
6 Impact of process variation on the RF and stability performance of SiGe source-based epitaxial layer TFET Debnath, Radhe Gobinda

21 5 p. 1150-1162
artikel
7 Impacts of material parameters on breakdown voltage and location for power MOSFETs Kumar, Kunal

21 5 p. 1163-1165
artikel
8 Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs1-xNx alloy Al Maaitah, Ibtisam F.

21 5 p. 1079-1087
artikel
9 Junctionless In0.3Ga0.7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications Vadizadeh, Mahdi

21 5 p. 1127-1137
artikel
10 Performance analysis of all optical-based quantum internet circuits Sharma, Amit Kumar

21 5 p. 1180-1188
artikel
11 Power-delay-product optimal repeater design for horizontal and vertical multilayer graphene nanoribbon interconnects Sanaeepur, M.

21 5 p. 1088-1097
artikel
12 Scattering characteristics of metal circular wire gratings in microwave and terahertz ranges Komarov, Vyacheslav V.

21 5 p. 1166-1173
artikel
13 Semi-analytical SPICE-compatible ballistic I–V model for 5 nm channel MoS2 FETs Gholinataj-Jelodar, Ehsan

21 5 p. 1108-1115
artikel
14 Ultrahigh on/off-current ratio γ-graphyne-1 nanotube-based sub-10-nm TFET modeling and simulation Rouzkhash, Behrouz

21 5 p. 1098-1107
artikel
15 Variable gain wideband LNA in 130 nm SiGe HBT technology with stepped impedance micro-strip open circuited stubs for minimum transmission phase variation for WiGig phased array receivers Pournamy, S.

21 5 p. 1138-1149
artikel
                             15 gevonden resultaten
 
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