nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A first-principles investigation of electronic structure and ferromagnetic properties in alkali metal-doped ZnS/Se semiconductors
|
Adli, W. |
|
|
21 |
5 |
p. 1061-1069 |
artikel |
2 |
A new strategy: A more valid determination of the nonlinear optical parameters for optoelectronic applications
|
Gomaa, Hosam M. |
|
|
21 |
5 |
p. 1174-1179 |
artikel |
3 |
Correction to: Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension
|
Calado, Philip |
|
|
21 |
5 |
p. 1189 |
artikel |
4 |
Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser
|
Kong, Senlin |
|
|
21 |
5 |
p. 1116-1126 |
artikel |
5 |
Electronic, magnetic and thermoelectric properties of Nb-substituted Fe2TiO5 pseudobrookite compound: Ab initio study
|
Mohammadi, Mahnaz |
|
|
21 |
5 |
p. 1070-1078 |
artikel |
6 |
Impact of process variation on the RF and stability performance of SiGe source-based epitaxial layer TFET
|
Debnath, Radhe Gobinda |
|
|
21 |
5 |
p. 1150-1162 |
artikel |
7 |
Impacts of material parameters on breakdown voltage and location for power MOSFETs
|
Kumar, Kunal |
|
|
21 |
5 |
p. 1163-1165 |
artikel |
8 |
Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs1-xNx alloy
|
Al Maaitah, Ibtisam F. |
|
|
21 |
5 |
p. 1079-1087 |
artikel |
9 |
Junctionless In0.3Ga0.7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications
|
Vadizadeh, Mahdi |
|
|
21 |
5 |
p. 1127-1137 |
artikel |
10 |
Performance analysis of all optical-based quantum internet circuits
|
Sharma, Amit Kumar |
|
|
21 |
5 |
p. 1180-1188 |
artikel |
11 |
Power-delay-product optimal repeater design for horizontal and vertical multilayer graphene nanoribbon interconnects
|
Sanaeepur, M. |
|
|
21 |
5 |
p. 1088-1097 |
artikel |
12 |
Scattering characteristics of metal circular wire gratings in microwave and terahertz ranges
|
Komarov, Vyacheslav V. |
|
|
21 |
5 |
p. 1166-1173 |
artikel |
13 |
Semi-analytical SPICE-compatible ballistic I–V model for 5 nm channel MoS2 FETs
|
Gholinataj-Jelodar, Ehsan |
|
|
21 |
5 |
p. 1108-1115 |
artikel |
14 |
Ultrahigh on/off-current ratio γ-graphyne-1 nanotube-based sub-10-nm TFET modeling and simulation
|
Rouzkhash, Behrouz |
|
|
21 |
5 |
p. 1098-1107 |
artikel |
15 |
Variable gain wideband LNA in 130 nm SiGe HBT technology with stepped impedance micro-strip open circuited stubs for minimum transmission phase variation for WiGig phased array receivers
|
Pournamy, S. |
|
|
21 |
5 |
p. 1138-1149 |
artikel |