no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A conservative finite difference scheme for Poisson–Nernst–Planck equations
|
Flavell, Allen |
|
2013 |
13 |
1 |
p. 235-249 |
article |
2 |
Analysis and design of digital predictive controller for PFC Cuk converter
|
Umamaheswari, M. G. |
|
2013 |
13 |
1 |
p. 142-154 |
article |
3 |
An efficient numerical approach to studying impact ionization in sub-micrometer devices
|
Chau, Quan |
|
2013 |
13 |
1 |
p. 329-337 |
article |
4 |
A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
|
Hosseini, Reza |
|
2013 |
13 |
1 |
p. 170-179 |
article |
5 |
A novel QCA implementation of MUX-based universal shift register
|
Sabbaghi-Nadooshan, Reza |
|
2013 |
13 |
1 |
p. 198-210 |
article |
6 |
A theoretical study of all optical clocked D flip flop using single micro-ring resonator
|
Rakshit, Jayanta Kumar |
|
2013 |
13 |
1 |
p. 278-286 |
article |
7 |
Bias and geometry optimization of FinFET for RF stability performance
|
Sivasankaran, K. |
|
2013 |
13 |
1 |
p. 250-256 |
article |
8 |
Carrier scattering and impact ionization in bilayer graphene
|
Saeidmanesh, M. |
|
2013 |
13 |
1 |
p. 180-185 |
article |
9 |
Challenges and opportunities for process modeling in the nanotechnology era
|
Lorenz, J. K. |
|
2013 |
13 |
1 |
p. 3-17 |
article |
10 |
Computational models for investigation of channel amplifier’s optimal parameters
|
Shymanska, Alla |
|
2013 |
13 |
1 |
p. 161-169 |
article |
11 |
Current and voltage based bit errors and their combined mitigation for the Kirchhoff-law–Johnson-noise secure key exchange
|
Saez, Yessica |
|
2013 |
13 |
1 |
p. 271-277 |
article |
12 |
Discrete geometric approach for modelling quantization effects in nanoscale electron devices
|
Paussa, Alan |
|
2013 |
13 |
1 |
p. 287-299 |
article |
13 |
Dual material gate junctionless tunnel field effect transistor
|
Bal, Punyasloka |
|
2013 |
13 |
1 |
p. 230-234 |
article |
14 |
Geometrical and physical optimization of a photovoltaic cell by means of a genetic algorithm
|
Alì, Giuseppe |
|
2013 |
13 |
1 |
p. 323-328 |
article |
15 |
Introduction
|
Pelaz, Lourdes |
|
2014 |
13 |
1 |
p. 1-2 |
article |
16 |
Miniaturized modified circular patch monopole antenna on ceramic-polytetrafluroethylene composite material substrate
|
Ullah, Mohammad Habib |
|
2013 |
13 |
1 |
p. 211-216 |
article |
17 |
Modeling of defects, dopant diffusion and clustering in silicon
|
Aboy, Maria |
|
2013 |
13 |
1 |
p. 40-58 |
article |
18 |
Modeling of junction formation in scaled Si devices
|
Noda, Taiji |
|
2014 |
13 |
1 |
p. 33-39 |
article |
19 |
Modeling of laser annealing
|
Fisicaro, G. |
|
2013 |
13 |
1 |
p. 70-94 |
article |
20 |
Molecular dynamics simulations of cluster impacts on solid targets: implantation, surface modification, and sputtering
|
Aoki, Takaaki |
|
2013 |
13 |
1 |
p. 108-121 |
article |
21 |
Monte Carlo simulation of diffusive-to-ballistic transition in phonon transport
|
Kukita, Kentaro |
|
2013 |
13 |
1 |
p. 264-270 |
article |
22 |
Multiscale modelling of irradiation in nanostructures
|
Nordlund, Kai |
|
2014 |
13 |
1 |
p. 122-141 |
article |
23 |
Numerical study of the effect of defect layer on unmagnetized plasma photonic crystals
|
Sheu, Tony W. H. |
|
2013 |
13 |
1 |
p. 313-322 |
article |
24 |
Performance evaluation of a lateral trench-gate power MOSFET on InGaAs
|
Singh, Yashvir |
|
2013 |
13 |
1 |
p. 155-160 |
article |
25 |
Process modeling for advanced device technologies
|
Cea, S. M. |
|
2013 |
13 |
1 |
p. 18-32 |
article |
26 |
Process modeling for doped regions formation on high efficiency crystalline silicon solar cells
|
Florakis, Antonios |
|
2013 |
13 |
1 |
p. 95-107 |
article |
27 |
Process modeling of stress and chemical effects in SiGe alloys using kinetic Monte Carlo
|
Zographos, Nikolas |
|
2013 |
13 |
1 |
p. 59-69 |
article |
28 |
Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion
|
Pozdnyakov, Dmitry |
|
2013 |
13 |
1 |
p. 338-351 |
article |
29 |
Signal integrity and propagation delay analysis using FDTD technique for VLSI interconnects
|
Sharma, Devendra Kumar |
|
2013 |
13 |
1 |
p. 300-306 |
article |
30 |
Spin transport in N-armchair-edge silicene nanoribbons
|
Bishnoi, Bhupesh |
|
2013 |
13 |
1 |
p. 186-191 |
article |
31 |
The impact of high-k gate dielectric and FIBL on performance of nano DG-MOSFETs with underlapped source/drain regions
|
Charmi, Morteza |
|
2013 |
13 |
1 |
p. 307-312 |
article |
32 |
The influence of the zigzag and armchair leads on quantum transport through the graphene based quantum rings
|
Mahnia, S. |
|
2013 |
13 |
1 |
p. 224-229 |
article |
33 |
Transport study of gate and channel engineering on the surrounding-gate CNTFETs based on NEGF quantum theory
|
Wang, Wei |
|
2013 |
13 |
1 |
p. 192-197 |
article |
34 |
Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications
|
Bothe, Kyle M. |
|
2013 |
13 |
1 |
p. 217-223 |
article |
35 |
Wigner transport equation with finite coherence length
|
Jacoboni, Carlo |
|
2013 |
13 |
1 |
p. 257-263 |
article |