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                             30 results found
no title author magazine year volume issue page(s) type
1 A constant recursive convolution technique for frequency dependent scalar wave equation based FDTD algorithm Özakın, M. Burak
2013
12 4 p. 752-756
article
2 Advanced electro-optical simulation of nanowire-based solar cells Zanuccoli, Mauro
2013
12 4 p. 572-584
article
3 ANN modeling for design of a matched low noise pHEMT amplifier for mobile application Chopra, P. K.
2013
12 4 p. 743-751
article
4 A simulation framework for modeling charge transport and degradation in high-k stacks Larcher, Luca
2013
12 4 p. 658-665
article
5 Atomistic calculations of the electronic, thermal, and thermoelectric properties of ultra-thin Si layers Neophytou, Neophytos
2013
12 4 p. 611-622
article
6 Atomistic modeling of semiconductor interfaces Blom, Anders
2013
12 4 p. 623-637
article
7 Benchmarking of GFET devices for amplifier application using multiscale simulation approach Fregonese, Sebastien
2013
12 4 p. 692-700
article
8 Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes Sevinçli, H.
2013
12 4 p. 685-691
article
9 Computational predictive models for organic semiconductors Sajeev, R.
2013
12 4 p. 790-795
article
10 Coupling atomistic and continuous media models for electronic device simulation Auf der Maur, Matthias
2013
12 4 p. 553-562
article
11 3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction Bufler, F. M.
2013
12 4 p. 651-657
article
12 Efficient and realistic device modeling from atomic detail to the nanoscale Fonseca, J. E.
2013
12 4 p. 592-600
article
13 EMC/FDTD/MD simulation of carrier transport and electrodynamics in two-dimensional electron systems Sule, N.
2013
12 4 p. 563-571
article
14 From atoms to product reliability: toward a generalized multiscale simulation approach Gerrer, Louis
2013
12 4 p. 638-650
article
15 Influence of distance between adjacent tubes on SWCNT bundle interconnect delay and power dissipation Rai, Mayank Kumar
2013
12 4 p. 796-802
article
16 Introduction Dollfus, Philippe
2013
12 4 p. 539-541
article
17 Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method Torrente, Giulio
2013
12 4 p. 585-591
article
18 Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications Chen, Yongbo
2013
12 4 p. 757-764
article
19 Modeling of Cu-linked rectification devices by varying torsion angles Parashar, Sweta
2013
12 4 p. 775-781
article
20 Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices Rudan, M.
2013
12 4 p. 666-674
article
21 Multiscale modeling of screening effects on conductivity of graphene in weakly bonded graphene-dielectric heterostructures Kharche, Neerav
2013
12 4 p. 722-729
article
22 Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility Nier, O.
2013
12 4 p. 675-684
article
23 Negative differential resistance in graphene-nanoribbon–carbon-nanotube crossbars: a first-principles multiterminal quantum transport study Saha, Kamal K.
2013
12 4 p. 542-552
article
24 Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET) Bal, Punyasloka
2013
12 4 p. 782-789
article
25 Self-consistent time-dependent boundary conditions for static and dynamic simulations of small electron devices Albareda, G.
2013
12 4 p. 730-742
article
26 Simulation of deep level traps effects in quantum well transistor laser Horri, Ashkan
2013
12 4 p. 812-815
article
27 Static and dynamic analysis of organic and hybrid inverter circuits Kumar, Brijesh
2013
12 4 p. 765-774
article
28 The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices Raleva, K.
2013
12 4 p. 601-610
article
29 Thermal model of MOSFET with SELBOX structure Narayanan, M. R.
2013
12 4 p. 803-811
article
30 VSP—a quantum-electronic simulation framework Baumgartner, Oskar
2013
12 4 p. 701-721
article
                             30 results found
 
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