nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A constant recursive convolution technique for frequency dependent scalar wave equation based FDTD algorithm
|
Özakın, M. Burak |
|
2013 |
12 |
4 |
p. 752-756 |
artikel |
2 |
Advanced electro-optical simulation of nanowire-based solar cells
|
Zanuccoli, Mauro |
|
2013 |
12 |
4 |
p. 572-584 |
artikel |
3 |
ANN modeling for design of a matched low noise pHEMT amplifier for mobile application
|
Chopra, P. K. |
|
2013 |
12 |
4 |
p. 743-751 |
artikel |
4 |
A simulation framework for modeling charge transport and degradation in high-k stacks
|
Larcher, Luca |
|
2013 |
12 |
4 |
p. 658-665 |
artikel |
5 |
Atomistic calculations of the electronic, thermal, and thermoelectric properties of ultra-thin Si layers
|
Neophytou, Neophytos |
|
2013 |
12 |
4 |
p. 611-622 |
artikel |
6 |
Atomistic modeling of semiconductor interfaces
|
Blom, Anders |
|
2013 |
12 |
4 |
p. 623-637 |
artikel |
7 |
Benchmarking of GFET devices for amplifier application using multiscale simulation approach
|
Fregonese, Sebastien |
|
2013 |
12 |
4 |
p. 692-700 |
artikel |
8 |
Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes
|
Sevinçli, H. |
|
2013 |
12 |
4 |
p. 685-691 |
artikel |
9 |
Computational predictive models for organic semiconductors
|
Sajeev, R. |
|
2013 |
12 |
4 |
p. 790-795 |
artikel |
10 |
Coupling atomistic and continuous media models for electronic device simulation
|
Auf der Maur, Matthias |
|
2013 |
12 |
4 |
p. 553-562 |
artikel |
11 |
3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction
|
Bufler, F. M. |
|
2013 |
12 |
4 |
p. 651-657 |
artikel |
12 |
Efficient and realistic device modeling from atomic detail to the nanoscale
|
Fonseca, J. E. |
|
2013 |
12 |
4 |
p. 592-600 |
artikel |
13 |
EMC/FDTD/MD simulation of carrier transport and electrodynamics in two-dimensional electron systems
|
Sule, N. |
|
2013 |
12 |
4 |
p. 563-571 |
artikel |
14 |
From atoms to product reliability: toward a generalized multiscale simulation approach
|
Gerrer, Louis |
|
2013 |
12 |
4 |
p. 638-650 |
artikel |
15 |
Influence of distance between adjacent tubes on SWCNT bundle interconnect delay and power dissipation
|
Rai, Mayank Kumar |
|
2013 |
12 |
4 |
p. 796-802 |
artikel |
16 |
Introduction
|
Dollfus, Philippe |
|
2013 |
12 |
4 |
p. 539-541 |
artikel |
17 |
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method
|
Torrente, Giulio |
|
2013 |
12 |
4 |
p. 585-591 |
artikel |
18 |
Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications
|
Chen, Yongbo |
|
2013 |
12 |
4 |
p. 757-764 |
artikel |
19 |
Modeling of Cu-linked rectification devices by varying torsion angles
|
Parashar, Sweta |
|
2013 |
12 |
4 |
p. 775-781 |
artikel |
20 |
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices
|
Rudan, M. |
|
2013 |
12 |
4 |
p. 666-674 |
artikel |
21 |
Multiscale modeling of screening effects on conductivity of graphene in weakly bonded graphene-dielectric heterostructures
|
Kharche, Neerav |
|
2013 |
12 |
4 |
p. 722-729 |
artikel |
22 |
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility
|
Nier, O. |
|
2013 |
12 |
4 |
p. 675-684 |
artikel |
23 |
Negative differential resistance in graphene-nanoribbon–carbon-nanotube crossbars: a first-principles multiterminal quantum transport study
|
Saha, Kamal K. |
|
2013 |
12 |
4 |
p. 542-552 |
artikel |
24 |
Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET)
|
Bal, Punyasloka |
|
2013 |
12 |
4 |
p. 782-789 |
artikel |
25 |
Self-consistent time-dependent boundary conditions for static and dynamic simulations of small electron devices
|
Albareda, G. |
|
2013 |
12 |
4 |
p. 730-742 |
artikel |
26 |
Simulation of deep level traps effects in quantum well transistor laser
|
Horri, Ashkan |
|
2013 |
12 |
4 |
p. 812-815 |
artikel |
27 |
Static and dynamic analysis of organic and hybrid inverter circuits
|
Kumar, Brijesh |
|
2013 |
12 |
4 |
p. 765-774 |
artikel |
28 |
The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices
|
Raleva, K. |
|
2013 |
12 |
4 |
p. 601-610 |
artikel |
29 |
Thermal model of MOSFET with SELBOX structure
|
Narayanan, M. R. |
|
2013 |
12 |
4 |
p. 803-811 |
artikel |
30 |
VSP—a quantum-electronic simulation framework
|
Baumgartner, Oskar |
|
2013 |
12 |
4 |
p. 701-721 |
artikel |