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                             54 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A Computational Exploration of Lateral Channel Engineering to Enhance MOSFET Performance Guo, Jing
 2002
 1 1-2 p. 185-189
 artikel
2 A Computational Technique for Electron Energy States Calculation in Nano-Scopic Three-Dimensional InAs/GaAs Semiconductor Quantum Rings Simulation Li, Yiming
 2002
 1 1-2 p. 227-230
 artikel
3 A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures Brown, Andrew R.
 2002
 1 1-2 p. 165-169
 artikel
4 An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials Shrivastav, G.
 2002
 1 1-2 p. 247-250
 artikel
5 A Particle Description Model for Quantum Tunneling Effects Tsuchiya, Hideaki
 2002
 1 1-2 p. 295-299
 artikel
6 A Space Dependent Wigner Equation Including Phonon Interaction Nedjalkov, M.
 2002
 1 1-2 p. 27-31
 artikel
7 A Wigner Function Based Ensemble Monte Carlo Approach for Accurate Incorporation of Quantum Effects in Device Simulation Shifren, L.
 2002
 1 1-2 p. 55-58
 artikel
8 Band-to-Band Tunneling by Monte Carlo Simulation for Prediction of MOSFET Gate-Induced Drain Leakage Current Kan, Edwin C.
 2002
 1 1-2 p. 223-226
 artikel
9 Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides Using Complex Band Models For SiO2 Sakai, Atsushi
 2002
 1 1-2 p. 195-199
 artikel
10 Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs? Watling, J.R.
 2002
 1 1-2 p. 289-293
 artikel
11 Comparison of Quantum Corrections for Monte Carlo Simulation Winstead, Brian
 2002
 1 1-2 p. 201-207
 artikel
12 Comparison of Three Quantum Correction Models for the Charge Density in MOS Inversion Layers Wang, Xinlin
 2002
 1 1-2 p. 283-287
 artikel
13 3D Monte Carlo Modeling of Thin SOI MOSFETs Including the Effective Potential and Random Dopant Distribution Ramey, S.M.
 2002
 1 1-2 p. 267-271
 artikel
14 3-D Parallel Monte Carlo Simulation of Sub-0.1 Micron MOSFETs on a Cluster Based Supercomputer Kepkep, Asim
 2002
 1 1-2 p. 171-174
 artikel
15 Editorial Ravaioli, Umberto
 2002
 1 1-2 p. 7
 artikel
16 Eigenstate Selection in Open Quantum Dot Systems: On the True Nature of Level Broadening Akis, R.
 2002
 1 1-2 p. 9-15
 artikel
17 Empirical Pseudopotential Method for the Band Structure Calculation of Strained-Silicon Germanium Materials Gonzalez, Salvador
 2002
 1 1-2 p. 179-183
 artikel
18 Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs Takeda, H.
 2002
 1 1-2 p. 219-222
 artikel
19 Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices Heinz, Frederik Ole
 2002
 1 1-2 p. 161-164
 artikel
20 Fully Numerical Monte Carlo Simulator for Noncubic Symmetry Semiconductors Tirino, Louis
 2002
 1 1-2 p. 231-234
 artikel
21 Hole Transport in Orthorhombically Strained Silicon Bufler, F.M.
 2002
 1 1-2 p. 175-177
 artikel
22 Hybrid LSDA/Diffusion Quantum Monte-Carlo Method for Spin Sequences in Vertical Quantum Dots Matagne, P.
 2002
 1 1-2 p. 135-139
 artikel
23 Low-Field Mobility and Quantum Effects in Asymmetric Silicon-Based Field-Effect Devices Knezevic, I.
 2002
 1 1-2 p. 273-277
 artikel
24 Modeling of Semiconductor Optical Amplifiers Reale, Andrea
 2002
 1 1-2 p. 129-134
 artikel
25 Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States Fiori, G.
 2002
 1 1-2 p. 39-42
 artikel
26 Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures Ting, D.Z.-Y.
 2002
 1 1-2 p. 147-151
 artikel
27 Molecular Devices Simulations Based on Density Functional Tight-Binding Di Carlo, Aldo
 2002
 1 1-2 p. 109-112
 artikel
28 Monte Carlo Based Calculation of the Electron Dynamics in a Two-Dimensional GaN/AlGaN Heterostructure in the Presence of Strain Polarization Fields Yu, Tsung-Hsing
 2002
 1 1-2 p. 209-214
 artikel
29 Monte-Carlo Simulation of Clocked and Non-Clocked QCA Architectures Bonci, L.
 2002
 1 1-2 p. 49-53
 artikel
30 Monte Carlo Simulations of Hole Dynamics in Si/SiGe Quantum Cascade Structures Ikonić, Z.
 2002
 1 1-2 p. 191-194
 artikel
31 Numerical Acceleration of Three-Dimensional Quantum Transport Method Using a Seven-Diagonal Pre-Conditioner Ting, David Z.-Y.
 2002
 1 1-2 p. 93-97
 artikel
32 Numerical Investigation of Shot Noise between the Ballistic and the Diffusive Regime Macucci, M.
 2002
 1 1-2 p. 99-102
 artikel
33 Numerical Study of Minority Carrier Induced Diffusion Capacitance in VCSELs Using Minilase Liu, Yang
 2002
 1 1-2 p. 119-122
 artikel
34 On Ohmic Boundary Conditions for Density-Gradient Theory Ancona, M.G.
 2002
 1 1-2 p. 103-107
 artikel
35 On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation Barker, John R.
 2002
 1 1-2 p. 17-21
 artikel
36 On the Current and Density Representation of Many-Body Quantum Transport Theory Barker, John R.
 2002
 1 1-2 p. 23-26
 artikel
37 On the Electron Transient Response in a 50 nm MOSFET by Ensemble Monte Carlo Simulation in Presence of the Smoothed Potential Algorithm Formicone, Gabriele
 2002
 1 1-2 p. 251-255
 artikel
38 Parallel Approaches for Particle-Based Simulation of Charge Transport in Semiconductors Saraniti, M.
 2002
 1 1-2 p. 215-218
 artikel
39 Parallelization of the Nanoelectronic Modeling Tool (NEMO 1-D) on a Beowulf Cluster Klimeck, Gerhard
 2002
 1 1-2 p. 75-79
 artikel
40 Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping Kalna, K.
 2002
 1 1-2 p. 257-261
 artikel
41 Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas Chen, Yang
 2002
 1 1-2 p. 241-245
 artikel
42 Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces Watling, J.R.
 2002
 1 1-2 p. 279-282
 artikel
43 Quantum Transport Simulation of Carrier Capture and Transport within Tunnel Injection Lasers Chen, Wanqiang
 2002
 1 1-2 p. 123-127
 artikel
44 Role of Carrier Capture in Microscopic Simulation of Multi-Quantum-Well Semiconductor Laser Diodes Hybertsen, M.S.
 2002
 1 1-2 p. 113-118
 artikel
45 RTD Relaxation Oscillations, the Time Dependent Wigner Equation and Phase Noise Grubin, H.L.
 2002
 1 1-2 p. 33-37
 artikel
46 Simulation of Field Coupled Computing Architectures Based on Magnetic Dot Arrays Csaba, György
 2002
 1 1-2 p. 87-91
 artikel
47 Study of Noise Properties in Nanoscale Electronic Devices Using Quantum Trajectories Oriols, Xavier
 2002
 1 1-2 p. 43-48
 artikel
48 The Effective Potential in Device Modeling: The Good, the Bad and the Ugly Ferry, D.K.
 2002
 1 1-2 p. 59-65
 artikel
49 Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures Cartoixà, X.
 2002
 1 1-2 p. 141-146
 artikel
50 Theoretical Study of RF Breakdown in GaN Wurtzite and Zincblende Phase MESFETs Weber, M.
 2002
 1 1-2 p. 235-239
 artikel
51 Thermally Self-Consistent Monte Carlo Device Simulations Pilgrim, N.J.
 2002
 1 1-2 p. 263-266
 artikel
52 Towards Fully Quantum Mechanical 3D Device Simulations Sabathil, M.
 2002
 1 1-2 p. 81-85
 artikel
53 Tunneling through Thin Oxides—New Insights from Microscopic Calculations Städele, M.
 2002
 1 1-2 p. 153-159
 artikel
54 Wigner Paths for Quantum Transport Bordone, Paolo
 2002
 1 1-2 p. 67-73
 artikel
                             54 gevonden resultaten
 
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