| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaN/GaN high electron mobility transistor for various sensing applications: A review
|
Bhat, Aasif Mohammad
|
|
|
176 |
C |
p.
|
artikel
|
| 2 |
Charge compensation impact on the access region resistance in AlGaN/GaN devices
|
He, Junxian
|
|
|
176 |
C |
p.
|
artikel
|
| 3 |
Corrigendum to “Modification of structure, electrical, linear and third-order nonlinear optical properties of spray pyrolyzed tin oxide films by deposition temperature” [Superlattice. Microst. 155 (2021) 106920]
|
Asha, Hind P.
|
|
|
176 |
C |
p.
|
artikel
|
| 4 |
Current transport characterization and photovoltaic performance of Si nanopencil-based Schottky junction assisted with VOx as a hole-injection layer
|
Abdelhameed, Mohammed
|
|
|
176 |
C |
p.
|
artikel
|
| 5 |
Design and fabrication process flow for high-efficiency and flexible InGaN solar cells
|
Gujrati, Rajat
|
|
|
176 |
C |
p.
|
artikel
|
| 6 |
Designing sub-5 nm monolayer AlP MOSFETs
|
Abdul-Hussein, W.A.
|
|
|
176 |
C |
p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
|
176 |
C |
p.
|
artikel
|
| 8 |
1.2 kV 4H–SiC Super Junction UMOSFET with a Low-K dielectric pillar
|
Hu, Xiarong
|
|
|
176 |
C |
p.
|
artikel
|
| 9 |
Reduction of vacancy defects induced by thermal annealing in β-Ga2O3 epilayer
|
Fan, Teng
|
|
|
176 |
C |
p.
|
artikel
|
| 10 |
Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method
|
Liu, Yingying
|
|
|
176 |
C |
p.
|
artikel
|
Tijdschrift beschrijving