| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances in graphene reinforced metal matrix nanocomposites: Mechanisms, processing, modelling, properties and applications
|
Chen, Wenge
|
|
|
3 |
4 |
p. 189-210
|
artikel
|
| 2 |
Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser
|
Liu, Jiayu
|
|
|
3 |
4 |
p. 218-228
|
artikel
|
| 3 |
Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
|
Wang, Xiuhong
|
|
|
3 |
4 |
p. 211-217
|
artikel
|
| 4 |
Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup
|
Diao, Shen
|
|
|
3 |
4 |
p. 235-240
|
artikel
|
| 5 |
Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
|
Qi, Yongle
|
|
|
3 |
4 |
p. 241-243
|
artikel
|
| 6 |
Foreword to the special issue on wide-bandgap (WBG) semiconductors: from fundamentals to applications
|
Xu, Zongwei
|
|
|
3 |
4 |
p. 187-188
|
artikel
|
| 7 |
Investigation of material removal characteristics of Si (100) wafer during linear field atmospheric-pressure plasma etching
|
Guo, Weijia
|
|
|
3 |
4 |
p. 244-249
|
artikel
|
| 8 |
Surface defects in 4H-SiC homoepitaxial layers
|
Zhao, Lixia
|
|
|
3 |
4 |
p. 229-234
|
artikel
|
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