| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphization of niobium layers by phosphorus ion implantation
|
Linker, G.
|
|
1983
|
201-210 |
P2 |
p. 969-974
6 p.
|
artikel
|
| 2 |
Annealing of In implanted germanium by pulsed electron beam
|
Laugier, A.
|
|
1983
|
201-210 |
P2 |
p. 701-705
5 p.
|
artikel
|
| 3 |
Anodic polarization studies of some ion-implanted metal surfaces
|
Qing-Ming, Chen
|
|
1983
|
201-210 |
P2 |
p. 867-871
5 p.
|
artikel
|
| 4 |
A study of Ar implantation induced defects in SiO2
|
Devine, R.A.B.
|
|
1983
|
201-210 |
P2 |
p. 1201-1206
6 p.
|
artikel
|
| 5 |
A study of shallow and deep damage in Cu after implantation of 100 keV Cu and Ag ions
|
Lindgreen, R.J.Th.
|
|
1983
|
201-210 |
P2 |
p. 963-967
5 p.
|
artikel
|
| 6 |
A study of the wear behaviour of ion implanted pure iron
|
Goode, P.D.
|
|
1983
|
201-210 |
P2 |
p. 925-931
7 p.
|
artikel
|
| 7 |
Author index
|
|
|
1983
|
201-210 |
P2 |
p. 1207-1218
12 p.
|
artikel
|
| 8 |
Behavior of recoiled oxygen in through-oxide arsenic-implanted silicon
|
Izumi, T.
|
|
1983
|
201-210 |
P2 |
p. 695-700
6 p.
|
artikel
|
| 9 |
Blistering observed in Mylar due to H+-ion bombardment
|
Shrinet, V.
|
|
1983
|
201-210 |
P2 |
p. 1193-1199
7 p.
|
artikel
|
| 10 |
CEMS as applied to implantation studies in FeAl 40 at.%
|
Eymery, J.P.
|
|
1983
|
201-210 |
P2 |
p. 919-924
6 p.
|
artikel
|
| 11 |
Characterization of calcium implanted zirconia thin films
|
Schnell, J.P.
|
|
1983
|
201-210 |
P2 |
p. 1187-1191
5 p.
|
artikel
|
| 12 |
Characterization of ion implanted silicon by ellipsometry and channeling
|
Lohner, T.
|
|
1983
|
201-210 |
P2 |
p. 615-620
6 p.
|
artikel
|
| 13 |
Composition and hardness profiles in ion implanted metals
|
Pethica, J.B.
|
|
1983
|
201-210 |
P2 |
p. 995-1000
6 p.
|
artikel
|
| 14 |
Composition and thermal evolution of nitrogen implanted steels: a systematic study
|
dos Santos, C.A.
|
|
1983
|
201-210 |
P2 |
p. 907-912
6 p.
|
artikel
|
| 15 |
Conversion electron Mössbauer study of LiF implanted with 57Fe ions
|
Kowalski, J.
|
|
1983
|
201-210 |
P2 |
p. 1145-1152
8 p.
|
artikel
|
| 16 |
Decomposition kinetics of supersaturated solid solutions in ion implanted silicon
|
Campisano, S.U.
|
|
1983
|
201-210 |
P2 |
p. 645-650
6 p.
|
artikel
|
| 17 |
Defect complexes in ion-irradiated aluminum
|
Swanson, M.L.
|
|
1983
|
201-210 |
P2 |
p. 1029-1034
6 p.
|
artikel
|
| 18 |
Depth profiles of Fe and Cr in InP after annealing
|
Gauneau, M.
|
|
1983
|
201-210 |
P2 |
p. 671-675
5 p.
|
artikel
|
| 19 |
Depth profiling and diffusion of 22Ne implanted in tantalum by (p, γ) resonance broadening
|
Da Silva, M.F.
|
|
1983
|
201-210 |
P2 |
p. 889-893
5 p.
|
artikel
|
| 20 |
Determination of implanted electrical profiles by a microwave contactless method: Application to selenium implantation in semi-insulating InP
|
Bellec, M.
|
|
1983
|
201-210 |
P2 |
p. 629-635
7 p.
|
artikel
|
| 21 |
Diffusion of implanted He in metals observed by PAC
|
Deicher, M.
|
|
1983
|
201-210 |
P2 |
p. 817-822
6 p.
|
artikel
|
| 22 |
Doping of III–V compound semiconductors by ion implantation
|
Stephens, K.G.
|
|
1983
|
201-210 |
P2 |
p. 589-614
26 p.
|
artikel
|
| 23 |
Effects of ion implantation on the reaction between water and glass
|
Lanford, W.A.
|
|
1983
|
201-210 |
P2 |
p. 1099-1103
5 p.
|
artikel
|
| 24 |
Effects related to recoil implantation experiments
|
Maillot, Brigitte
|
|
1983
|
201-210 |
P2 |
p. 707-710
4 p.
|
artikel
|
| 25 |
Electrical conductivity of nitrogen and argon implanted diamond
|
Iwaki, M.
|
|
1983
|
201-210 |
P2 |
p. 1129-1133
5 p.
|
artikel
|
| 26 |
Electrochemical and A.E.S. studies of FeCr surface alloys formed on AISI 52100 steel by ion beam mixing
|
Chan, W.K.
|
|
1983
|
201-210 |
P2 |
p. 857-865
9 p.
|
artikel
|
| 27 |
Endommagement produit dans des films de fer α irradies a 77 K par different ions
|
Jaouen, C.
|
|
1983
|
201-210 |
P2 |
p. 947-952
6 p.
|
artikel
|
| 28 |
Epitaxial recrystallisation of gallium implanted (100) silicon
|
Elliman, R.
|
|
1983
|
201-210 |
P2 |
p. 663-669
7 p.
|
artikel
|
| 29 |
Etude par microscopie electronique a balayage de l'endommagement par fatigue du cuivre apres implantation de divers elements (de He à Xe)
|
Mendez, J.
|
|
1983
|
201-210 |
P2 |
p. 989-994
6 p.
|
artikel
|
| 30 |
Evidence for implantation-induced impurity diffusion in metals
|
Thomé, L.
|
|
1983
|
201-210 |
P2 |
p. 1035-1039
5 p.
|
artikel
|
| 31 |
Exfoliation on stainless steel and inconel produced by 0.8–4 MeV helium ion bombardment
|
Pászti, F.
|
|
1983
|
201-210 |
P2 |
p. 1001-1009
9 p.
|
artikel
|
| 32 |
Friction and wear of ion implanted aluminium
|
Madakson, Peter B.
|
|
1983
|
201-210 |
P2 |
p. 983-988
6 p.
|
artikel
|
| 33 |
Helium decoration of impurities in metals
|
de Waard, H.
|
|
1983
|
201-210 |
P2 |
p. 899-905
7 p.
|
artikel
|
| 34 |
High-temperature oxidation of ion implanted tantalum
|
Kaufmann, E.N.
|
|
1983
|
201-210 |
P2 |
p. 953-961
9 p.
|
artikel
|
| 35 |
Hydrogen profiles in ion implanted garnets
|
Magnin, Joël
|
|
1983
|
201-210 |
P2 |
p. 1153-1157
5 p.
|
artikel
|
| 36 |
Implantation of Mn In PbTe and synthesis of Pb1−xMnxTe
|
Palmetshofer, L.
|
|
1983
|
201-210 |
P2 |
p. 725-729
5 p.
|
artikel
|
| 37 |
Implantation phases in solids
|
Pavlov, P.V.
|
|
1983
|
201-210 |
P2 |
p. 791-798
8 p.
|
artikel
|
| 38 |
Influence de l'implantation d'aluminium sur la plasticite du cuivre monocristallin
|
Tranchant, F.
|
|
1983
|
201-210 |
P2 |
p. 895-898
4 p.
|
artikel
|
| 39 |
Ion-beam analysis of implanted simulated nuclear waste glasses
|
Arnold, G.W.
|
|
1983
|
201-210 |
P2 |
p. 1071-1077
7 p.
|
artikel
|
| 40 |
Ion-beam induced annealing of radiation damage in silicon on sapphire
|
Svensson, B.
|
|
1983
|
201-210 |
P2 |
p. 755-760
6 p.
|
artikel
|
| 41 |
Ionic decomposition of platinum chlorides
|
Eskildsen, Svend Stensig
|
|
1983
|
201-210 |
P2 |
p. 913-917
5 p.
|
artikel
|
| 42 |
Ion implanation effects in bubble garnet materials
|
Perez, A.
|
|
1983
|
201-210 |
P2 |
p. 1179-1185
7 p.
|
artikel
|
| 43 |
Ion implantation damage in InP
|
Zhang, Tong He
|
|
1983
|
201-210 |
P2 |
p. 761-766
6 p.
|
artikel
|
| 44 |
Ion implantation in Hg1−xCdxTe
|
Destefanis, G.L.
|
|
1983
|
201-210 |
P2 |
p. 567-580
14 p.
|
artikel
|
| 45 |
Ion implantation into LiNbO3
|
Götz, G.
|
|
1983
|
201-210 |
P2 |
p. 1079-1088
10 p.
|
artikel
|
| 46 |
Ion implantation into metals to prevent high temperature oxidation
|
Pons, M.
|
|
1983
|
201-210 |
P2 |
p. 1011-1017
7 p.
|
artikel
|
| 47 |
Ion implantation of silicon in gallium arsenide: Damage and annealing characterizations
|
Pribat, D.
|
|
1983
|
201-210 |
P2 |
p. 737-742
6 p.
|
artikel
|
| 48 |
Ion implantation through aluminum thin film deposited on iron
|
Iwaki, M.
|
|
1983
|
201-210 |
P2 |
p. 941-945
5 p.
|
artikel
|
| 49 |
Ion implanted catalysts for fuel cell reactions
|
Wolf, Gerhard K.
|
|
1983
|
201-210 |
P2 |
p. 835-840
6 p.
|
artikel
|
| 50 |
Ion-implanted polysilicon diffusion sources
|
Michel, A.E.
|
|
1983
|
201-210 |
P2 |
p. 719-724
6 p.
|
artikel
|
| 51 |
Ion range studies of cerium implanted CaF2
|
Arafah, D.E.
|
|
1983
|
201-210 |
P2 |
p. 1105-1110
6 p.
|
artikel
|
| 52 |
Lattice location of boron implanted into various metal crystals
|
Beck, K.
|
|
1983
|
201-210 |
P2 |
p. 849-855
7 p.
|
artikel
|
| 53 |
Limiting compositions and phase transformations resulting from implanting aluminum into nickel
|
Cordts, Bernhardt
|
|
1983
|
201-210 |
P2 |
p. 873-879
7 p.
|
artikel
|
| 54 |
Low temperature annealing behaviour of two species (argon and antimony) implanted silicon
|
Spinelli, P.
|
|
1983
|
201-210 |
P2 |
p. 751-753
3 p.
|
artikel
|
| 55 |
Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si
|
Ishiwara, Hiroshi
|
|
1983
|
201-210 |
P2 |
p. 689-693
5 p.
|
artikel
|
| 56 |
Metastable solid solutions of antimony in (100) silicon
|
Pogany, A.P.
|
|
1983
|
201-210 |
P2 |
p. 731-736
6 p.
|
artikel
|
| 57 |
Mg+ and Be+ ion implantation into AlxGa1−xAs
|
Yokota, Masaki
|
|
1983
|
201-210 |
P2 |
p. 711-718
8 p.
|
artikel
|
| 58 |
Modification of tribological characteristics of metals after nitrogen implantation
|
Fu-Zhai, Cui
|
|
1983
|
201-210 |
P2 |
p. 881-887
7 p.
|
artikel
|
| 59 |
Near surface modification of α-Al2O3 by ion implantation followed by thermal annealing
|
Naramoto, H.
|
|
1983
|
201-210 |
P2 |
p. 1159-1166
8 p.
|
artikel
|
| 60 |
On the thermal effect of ion implantation
|
Gratton, Luigi M.
|
|
1983
|
201-210 |
P2 |
p. 1117-1120
4 p.
|
artikel
|
| 61 |
Oxidation behaviour of ion implanted nickel
|
Slater, M.
|
|
1983
|
201-210 |
P2 |
p. 1023-1028
6 p.
|
artikel
|
| 62 |
Oxygen ion beam modification of GaAs
|
Xian-Can, Deng
|
|
1983
|
201-210 |
P2 |
p. 657-661
5 p.
|
artikel
|
| 63 |
Photographic image storage in ion implanted PLZT ceramics
|
Peercy, P.S.
|
|
1983
|
201-210 |
P2 |
p. 1167-1178
12 p.
|
artikel
|
| 64 |
Properties of ion implanted glasses
|
Mazzoldi, Paolo
|
|
1983
|
201-210 |
P2 |
p. 1089-1098
10 p.
|
artikel
|
| 65 |
Radiation enhanced diffusion of krypton and uranium impurities in LiF
|
Bangert, U.
|
|
1983
|
201-210 |
P2 |
p. 1111-1115
5 p.
|
artikel
|
| 66 |
Radiation enhanced diffusion of silicon into iron for high temperature oxidation improvement
|
Galarie, A.
|
|
1983
|
201-210 |
P2 |
p. 823-829
7 p.
|
artikel
|
| 67 |
Redistribution of implanted noble gas atoms by self-interstitials in molybdenum and nickel
|
van Veen, A.
|
|
1983
|
201-210 |
P2 |
p. 1055-1061
7 p.
|
artikel
|
| 68 |
Residual disorder in silicon after anneal of high dose through oxide arsenic implants
|
Hagmann, D.
|
|
1983
|
201-210 |
P2 |
p. 683-687
5 p.
|
artikel
|
| 69 |
Reversible transformation of defects in hydrogen-implanted silicon
|
Gorelkinskii, Yu.
|
|
1983
|
201-210 |
P2 |
p. 677-682
6 p.
|
artikel
|
| 70 |
Rutherford backscattering analysis of thermal-pulse annealed Hg1−xCdxTe
|
Conway, K.L.
|
|
1983
|
201-210 |
P2 |
p. 651-655
5 p.
|
artikel
|
| 71 |
Site localization, aggregation and atomic size effects for implanted iron alloys — correlation with the miedema model of alloying
|
Sawicka, B.D.
|
|
1983
|
201-210 |
P2 |
p. 799-816
18 p.
|
artikel
|
| 72 |
Some practical aspects of N+ implantation in various steels related to wearing
|
Kun, Yu
|
|
1983
|
201-210 |
P2 |
p. 1063-1070
8 p.
|
artikel
|
| 73 |
Stoichiometry changes in III–V compounds under ion bombardment
|
Barcz, A.
|
|
1983
|
201-210 |
P2 |
p. 621-627
7 p.
|
artikel
|
| 74 |
Stress and strain in quartz and silica irradiated with light ions
|
King, B.V.
|
|
1983
|
201-210 |
P2 |
p. 1135-1143
9 p.
|
artikel
|
| 75 |
Sulphur implantation in GaAs
|
Bhattacharya, R.S.
|
|
1983
|
201-210 |
P2 |
p. 637-643
7 p.
|
artikel
|
| 76 |
Superconductivity in H-charged ion-beam mixed PdxCu1−x
|
Scholz, W.
|
|
1983
|
201-210 |
P2 |
p. 1019-1022
4 p.
|
artikel
|
| 77 |
Superconductivity of simple metal-hydrogen systems produced by ion implantation
|
Ochmann, Frank
|
|
1983
|
201-210 |
P2 |
p. 831-834
4 p.
|
artikel
|
| 78 |
Tarnishing of ion implanted copper in hydrogen sulphide containing atmospheres
|
Peide, Zhou
|
|
1983
|
201-210 |
P2 |
p. 841-847
7 p.
|
artikel
|
| 79 |
The application of nitrogen ion implantation in silicon technology
|
Josquin, W.J.M.J.
|
|
1983
|
201-210 |
P2 |
p. 581-587
7 p.
|
artikel
|
| 80 |
The behaviour of hydrogen atoms implanted into metals
|
Möller, W.
|
|
1983
|
201-210 |
P2 |
p. 773-790
18 p.
|
artikel
|
| 81 |
The effect of ion implantation on epitaxial magnetic garnet thin films
|
Guzman, Alberto M.
|
|
1983
|
201-210 |
P2 |
p. 1121-1127
7 p.
|
artikel
|
| 82 |
The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si
|
Sadana, D.K.
|
|
1983
|
201-210 |
P2 |
p. 743-750
8 p.
|
artikel
|
| 83 |
The influence of electronic processes on the epitaxial regrowth rate in ion implanted silicon
|
Williams, J.S.
|
|
1983
|
201-210 |
P2 |
p. 767-771
5 p.
|
artikel
|
| 84 |
The influence of implanted dopants on stresses and diffusion processes in NiO films during thermal oxidation of Ni
|
Loison, D.
|
|
1983
|
201-210 |
P2 |
p. 975-981
7 p.
|
artikel
|
| 85 |
Thermally activated clustering of silver in tungsten studied with THDS
|
van der Kolk, G.J.
|
|
1983
|
201-210 |
P2 |
p. 1047-1053
7 p.
|
artikel
|
| 86 |
Thermal stability of ion implanted AuFe and PbFe supersaturated alloys
|
Turos, A.
|
|
1983
|
201-210 |
P2 |
p. 1041-1046
6 p.
|
artikel
|
| 87 |
Wear testing under high load conditions
|
Hartley, N.E.W.
|
|
1983
|
201-210 |
P2 |
p. 933-940
8 p.
|
artikel
|
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