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                             122 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absence of peak mobility in silicon MOS systems Gold, A.
1986
170 1-2 p. A240-
1 p.
artikel
2 AC conductivity of (AlGa)As-GaAs heterostructures and silicon MOSFETS in the quantum Hall regime Goldberg, B.B.
1986
170 1-2 p. A227-
1 p.
artikel
3 Activation energies of fundamental and higher order states in the fractional quantum Hall effect Boebinger, G.S.
1986
170 1-2 p. A223-A224
nvt p.
artikel
4 Activation energies of the 1 3 and 2 3 fractional quantum Hall effect Wakabayashi, J.
1986
170 1-2 p. A224-
1 p.
artikel
5 Activation gaps in the energy spectrum and influence of disorder under fractional quantum Hall effect in silicon MOSFET Kukushkin, I.V.
1986
170 1-2 p. A225-
1 p.
artikel
6 An experimental test of two-parameter scaling of integral quantum Hall effect Wei, H.P.
1986
170 1-2 p. A231-
1 p.
artikel
7 Anomalous cyclotron resonance linewidth and splitting in heterojunctions displaying the fractional quantum Hall effect Rikken, G.L.J.A.
1986
170 1-2 p. A226-
1 p.
artikel
8 Author index 1986
170 1-2 p. A262-A272
nvt p.
artikel
9 Calculations of the fractional quantized Hall effect Halperin, BertrandI.
1986
170 1-2 p. A223-
1 p.
artikel
10 Characteristic features of two-dimensional electronic structure in GaInAs/InP heterojunctions Yamada, Syoji
1986
170 1-2 p. A246-
1 p.
artikel
11 Coherent phenomena in small systems Isawa, Yoshimasa
1986
170 1-2 p. A218-
1 p.
artikel
12 Critical localization and low-temperature transport in two-dimensional Landau quantization Aoki, H.
1986
170 1-2 p. A232-
1 p.
artikel
13 Cyclotron resonance of interacting nondegenerate two-dimensional electrons Dykman, M.I.
1986
170 1-2 p. A222-
1 p.
artikel
14 Cyclotron resonance of quasi-two-dimensional electrons in the Voigt configuration Chaplik, A.V.
1986
170 1-2 p. A241-
1 p.
artikel
15 Cyclotron resonance of two-dimensional holes in GaAs-AlGaAs multi-quantum wells Iwasa, Y.
1986
170 1-2 p. A252-A253
nvt p.
artikel
16 Density of states in Landau level tails of GaAs-Al x Ga1−x As heterostructures Weiss, D.
1986
170 1-2 p. A234-
1 p.
artikel
17 Destruction of the fractional quantum Hall effect by disorder Laughlin, R.B.
1986
170 1-2 p. A226-
1 p.
artikel
18 Dielectric response of one-dimensional semiconductor quantum wires Lai, W.Y.
1986
170 1-2 p. A219-
1 p.
artikel
19 Dimensional cross-over of electron-electron interactions in GaAs/Al1−x Ga xAs heterostructures Choi, K.K.
1986
170 1-2 p. A260-
1 p.
artikel
20 1D perimeter waves in a classical 2D electron system Glattli, D.C.
1986
170 1-2 p. A220-
1 p.
artikel
21 Editorial Board 1986
170 1-2 p. IFC-
1 p.
artikel
22 Effect of finite electric field on the quantum Hall effect Takamasu, T.
1986
170 1-2 p. A228-A229
nvt p.
artikel
23 Effect of the higher Landau levels on the excitation spectrum of the ground state of 2D electrons Yoshioka, Daijiro
1986
170 1-2 p. A223-
1 p.
artikel
24 Electrical conductivity of highly correlated 2D electrons formed on solid neon Kajita, Koji
1986
170 1-2 p. A221-
1 p.
artikel
25 Electron-concentration dependence of the two-dimensional electron mobilities in modulation-doped AlGaAs/GaAs heterostructures Hirakawa, K.
1986
170 1-2 p. A243-
1 p.
artikel
26 Electronic subbands and Landau levels in AlGaAs sawtooth superlattices Fasolino, A.
1986
170 1-2 p. A254-
1 p.
artikel
27 Energy levels in semiconductor quantum wells Bastard, G.
1986
170 1-2 p. A243-
1 p.
artikel
28 Executive members of the foundation (1985) 1986
170 1-2 p. A216-
1 p.
artikel
29 Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS Toriumi, A.
1986
170 1-2 p. A239-
1 p.
artikel
30 Experimental determination of the current flow in the quantum Hall regime Goldberg, B.B.
1986
170 1-2 p. A229-
1 p.
artikel
31 Far infrared magneto-absorption of hydrogenic donors in GaAs-Al0.3G0.7As quantum wells Jarosik, N.C.
1986
170 1-2 p. A244-A245
nvt p.
artikel
32 Frequency dependence of the quantised Hall effect Powell, T.G.
1986
170 1-2 p. A227-
1 p.
artikel
33 Frequency shifted polaron coupling in GaInAs heterostructures Brunel, L.C.
1986
170 1-2 p. A250-
1 p.
artikel
34 Giant induced voltages in the quantized Hall regime Syphers, D.A.
1986
170 1-2 p. A230-
1 p.
artikel
35 Gigantic oscillations in field-effect mobilities observed in ∼ 150 nm width MOSFETS Katayama, Yoshifumi
1986
170 1-2 p. A217-A218
nvt p.
artikel
36 High electron mobility transistors Hiyamizu, S.
1986
170 1-2 p. A261-
1 p.
artikel
37 High field drift velocities of two-dimensional carriers in GaAs/AlGaAs quantum well structures Höpfel, R.A.
1986
170 1-2 p. A249-
1 p.
artikel
38 High-field magneto-spectroscopy on p-type GaAs/GaAlAs heterojunctions Erhardt, W.
1986
170 1-2 p. A252-
1 p.
artikel
39 High-precision measurements of the temperature and current dependence of the quantized Hall resistance Van Der Wel, W.
1986
170 1-2 p. A230-
1 p.
artikel
40 Hopping conduction in quasi-one-dimensional systems Webb, R.A.
1986
170 1-2 p. A217-
1 p.
artikel
41 Impurity-bound polaron in two-dimensional semiconductor structures Mason, B.A.
1986
170 1-2 p. A251-
1 p.
artikel
42 Impurity-shifted intersubband transitions and screening in Na+-drifted Si MOSFETS Glaser, Evan
1986
170 1-2 p. A240-
1 p.
artikel
43 Inelastic electron scattering by collective charge density excitations at the surface of a semiconductor superlattice Hawrylak, Pawel
1986
170 1-2 p. A248-
1 p.
artikel
44 Inert two-dimensional accumulation layers at the free ZnO surface produced by hydrogen implantation Many, A.
1986
170 1-2 p. A242-
1 p.
artikel
45 Influence of a parallel magnetic field on subband energies in Si(001) electron inversion layers Kunze, U.
1986
170 1-2 p. A238-
1 p.
artikel
46 Interaction of two-dimensional electrons and polar optical phonons in a superlattice Sawaki, N.
1986
170 1-2 p. A250-
1 p.
artikel
47 Interface subbands of HgTe-CdTe quantum wells Lin-Liu, Y.R.
1986
170 1-2 p. A243-
1 p.
artikel
48 Intersubband resonance excitation in microstructured MOS systems Mackens, U.
1986
170 1-2 p. A238-
1 p.
artikel
49 Is the ground state of the two-dimensional electron-hole fluid in a strong magnetic field an exciton Bose condensate or a maximum density pancake? Paquet, D.
1986
170 1-2 p. A237-
1 p.
artikel
50 Landau level density of states through specific heat in GaAs/GaAlAs multilayers Gornik, E.
1986
170 1-2 p. A234-
1 p.
artikel
51 Landau levels of the two-dimensional hole gas in GaAs with inclusion of the anisotropy of the band structure Bangert, E.
1986
170 1-2 p. A253-
1 p.
artikel
52 Lateral surface magnetoplasmon in a semiconductor superlattice and edge magnetoplasmon in a two-dimensional electron gas Wu, J.-W.
1986
170 1-2 p. A248-
1 p.
artikel
53 Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures Takagahara, Toshihide
1986
170 1-2 p. A257-
1 p.
artikel
54 Localization in a strong magnetic field and the quantized Hall effect Hikami, S.
1986
170 1-2 p. A233-
1 p.
artikel
55 Magnetization and density of states of the 2D electron gas in GaAs/AlGaAs heterostructures Eisenstein, J.P.
1986
170 1-2 p. A233-
1 p.
artikel
56 Magnetocapacitance measurements in GaAs heterostructures Smith III, T.P.
1986
170 1-2 p. A236-
1 p.
artikel
57 Magnetoconductive properties of 2D Landau electrons in heterostructure devices Murayama, Yoshimasa
1986
170 1-2 p. A236-
1 p.
artikel
58 Magneto-optical absorption in GaSb-AlSb superlattices Voisin, P.
1986
170 1-2 p. A257-
1 p.
artikel
59 Magnetoresistance of n-AlGaAs/GaAs two-dimensional electron gas thin wire Tsubaki, Kotaro
1986
170 1-2 p. A218-
1 p.
artikel
60 Magneto-resistance of strongly-coupled ripplonic polarons Saitoh, Motohiko
1986
170 1-2 p. A221-
1 p.
artikel
61 Magnetotransport and electron states in two-dimensional systems including the effect of a random potential and the boundary conditions Johnston, R.
1986
170 1-2 p. A232-
1 p.
artikel
62 Magneto-transport studies in MBE-grown GaInAs-InP heterostructures under hydrostatic pressure Torres, C.M.Sotomayor
1986
170 1-2 p. A245-
1 p.
artikel
63 Maximum finite-temperature mobility in heterostructures: Influence of screening of electron-acoustic phonon interactions Vinter, B.
1986
170 1-2 p. A244-
1 p.
artikel
64 Measurements of thermoelectric power in two-dimensional systems Vuong, T.H.H.
1986
170 1-2 p. A235-
1 p.
artikel
65 Mobile electrons on a solid hydrogen surface Paalanen, M.A.
1986
170 1-2 p. A221-
1 p.
artikel
66 Natural quantum wells in ZnSe Ohyama, T.
1986
170 1-2 p. A247-
1 p.
artikel
67 Non-equilibrium electrons in the quantum Hall effect regime Yoshihiro, K.
1986
170 1-2 p. A228-
1 p.
artikel
68 Nonlinear behavior of magnetoconductance in two- dimensional electron gas Fang, F.F.
1986
170 1-2 p. A228-
1 p.
artikel
69 Non-Ohmic transport in the magnetic-field-induced charge density wave phase of graphite Iye, Yasuhiro
1986
170 1-2 p. A237-
1 p.
artikel
70 Observation of magnetic levels in a superlattice with a magnetic field parallel to the layers Belle, G.
1986
170 1-2 p. A254-
1 p.
artikel
71 Odd and even fractionally quantized states in GaAs-GaAlAs heterojunctions Clark, R.G.
1986
170 1-2 p. A224-A225
nvt p.
artikel
72 Optical control of two-dimensional electron density in a single asymmetric quantum well Chaves, A.S.
1986
170 1-2 p. A254-A255
nvt p.
artikel
73 Optical investigations of PbTe/Pb1−x Sn xTe superlattices Pascher, H.
1986
170 1-2 p. A258-
1 p.
artikel
74 Parallel magnetoresistance and phase relaxation length and the three-dimensional to two-dimensional transition of electronic transport in a GaAs MESFET Newson, D.J.
1986
170 1-2 p. A260-
1 p.
artikel
75 Perturbation theory of the photoluminescence spectrum of modulation-doped quantum wells Bauer, GerritE.W.
1986
170 1-2 p. A256-
1 p.
artikel
76 Photoluminescence measurements at the Si/SiO2 interface Martelli, Faustino
1986
170 1-2 p. A259-
1 p.
artikel
77 Photoluminescence study of two-dimensional carriers in the presence of in-plane magnetic fields Turberfield, A.J.
1986
170 1-2 p. A255-
1 p.
artikel
78 Polaronic effects for electrons on helium films Platzman, P.M.
1986
170 1-2 p. A219-
1 p.
artikel
79 Preface Ando, Tsuneya
1986
170 1-2 p. A213-
1 p.
artikel
80 Properties of two-dimensional hole gases of inversion and accumulation layers in magnetic fields Ekenberg, U.
1986
170 1-2 p. A253-
1 p.
artikel
81 Pulse Fourier Transform method to study coupled plasmon-ripplon mode Kono, Kimitoshi
1986
170 1-2 p. A220-
1 p.
artikel
82 Quantized plateaus of the Hall conductance of 2D electron systems Isihara, A.
1986
170 1-2 p. A233-
1 p.
artikel
83 Quantum magneto-transport in p-type inversion layers of germanium bicrystals Landwehr, G.
1986
170 1-2 p. A261-
1 p.
artikel
84 Quantum Monte Carlo simulation of the Wigner transition in two-dimensional electron systems Imada, Masatoshi
1986
170 1-2 p. A223-
1 p.
artikel
85 Quantum transport in narrow MOSFET channels Skocpol, W.J.
1986
170 1-2 p. A217-
1 p.
artikel
86 Quasi-two-dimensional exciton-polaron in CdTe/(Cd, Mn)Te quantum wells Nurmikko, A.V.
1986
170 1-2 p. A258-
1 p.
artikel
87 Resonance Raman scattering by intrasubband excitations of GaAs multi-quantum well structures Fasol, G.
1986
170 1-2 p. A247-
1 p.
artikel
88 Resonant tunneling via localized states in thin MOS structures Hartstein, A.
1986
170 1-2 p. A240-
1 p.
artikel
89 Screened electron-polar optic phonon interaction and power loss of hot electrons in bulk GaAs and in quantum wells Basu, P.K.
1986
170 1-2 p. A249-
1 p.
artikel
90 Size effect in the quantum Hall regime Zheng, H.Z.
1986
170 1-2 p. A229-
1 p.
artikel
91 Spectroscopy of inversion electrons on InSb in crossed electric and magnetic fields Oelting, S.
1986
170 1-2 p. A241-
1 p.
artikel
92 Spectroscopy of two-dimensional hole gases in GaAs-(AlGa)As heterostructures Pinczuk, A.
1986
170 1-2 p. A251-A252
nvt p.
artikel
93 Spin fluctuations and magnetoresistance in dirty metals Fukuyama, Hidetoshi
1986
170 1-2 p. A260-
1 p.
artikel
94 Studies of the fractional quantum Hall effect in a silicon MOSFET Furneaux, J.E.
1986
170 1-2 p. A225-A226
nvt p.
artikel
95 Subject index 1986
170 1-2 p. A273-A287
nvt p.
artikel
96 Superconducting behavior in PbTe-SnTe superlattices Murase, K.
1986
170 1-2 p. A246-A247
nvt p.
artikel
97 Surface bipolaron formation in the two-electron-plus-ripplon system Kato, Hatsuhiro
1986
170 1-2 p. A222-
1 p.
artikel
98 Temperature dependence of the quantum Hall resistance D'Iorio, M.
1986
170 1-2 p. A230-A231
nvt p.
artikel
99 The “diamagnetic” Shubnikov-De Haas effect for multi-subband charge layers Reisinger, H.
1986
170 1-2 p. A241-
1 p.
artikel
100 The dynamics of electron scattering at Na+-contaminated Si-SiO2 interfaces Koch, F.
1986
170 1-2 p. A239-
1 p.
artikel
101 The instability of 2D electron gas at high density Sun, Xin
1986
170 1-2 p. A242-
1 p.
artikel
102 Theory of energy relaxation of 2D hot carriers in GaAs quantum wells Katayama, S.
1986
170 1-2 p. A249-
1 p.
artikel
103 Theory of the quantum well excitonic polariton; Effect of the valence subband splitting Nakayama, M.
1986
170 1-2 p. A256-A257
nvt p.
artikel
104 The parameters of quasi-two-dimensional electron-hole plasma stimulated by laser radiation Litovchenko, V.G.
1986
170 1-2 p. A259-
1 p.
artikel
105 The polaronic state of a multi-electron dimple on the liquid helium film Degani, MarcosH.
1986
170 1-2 p. A222-
1 p.
artikel
106 The properties of hydrogenic donors confined in GaAs-AlGaAs multiple quantum wells Shanabrook, B.V.
1986
170 1-2 p. A244-
1 p.
artikel
107 Thermomagnetic behaviour of the two-dimensional electron gas in GaAs-Al x Ga1−x As heterostructures Obloh, H.
1986
170 1-2 p. A234-A235
nvt p.
artikel
108 The two-dimensional electron gas in a periodic potential Kelly, M.J.
1986
170 1-2 p. A219-
1 p.
artikel
109 Tilted field studies of Hg0.8Cd0.2Te accumulation layers Singleton, J.
1986
170 1-2 p. A242-
1 p.
artikel
110 Time-resolved photoluminescence from hot two-dimensional carriers in GaAs-GaAlAs MQWS Ryan, J.F.
1986
170 1-2 p. A248-
1 p.
artikel
111 Transport in InGaAs/InP heterostructures grown by MOCVD Kane, M.J.
1986
170 1-2 p. A246-
1 p.
artikel
112 Tunneling of surface state electrons on liquid helium in the presence of disorder and ripplons Jackson, S.A.
1986
170 1-2 p. A220-
1 p.
artikel
113 Two-dimensional holes at high magnetic fields Mendez, E.E.
1986
170 1-2 p. A251-
1 p.
artikel
114 Two-dimensional magneto-polarons in GaAs-GaAlAs heterostructures Lassnig, Rudolf
1986
170 1-2 p. A250-
1 p.
artikel
115 Two-dimensional plasmons in homogeneous and laterally microstructured space charge layers Heitmann, Detlef
1986
170 1-2 p. A238-
1 p.
artikel
116 Two-dimensional shrinkage of the exciton wavefunction in quantum wells probed by optical absorption Masumoto, Yasuaki
1986
170 1-2 p. A256-
1 p.
artikel
117 Two-parameter scaling function in two-dimensional Anderson localization under weak magnetic fields Ono, Yoshiyuki
1986
170 1-2 p. A261-
1 p.
artikel
118 Universal scaling relation of conductivities in quantized Landau levels Ando, Tsuneya
1986
170 1-2 p. A231-
1 p.
artikel
119 Valley splitting in n-channel inversion layers on silicon (100) surface Wakabayashi, J.
1986
170 1-2 p. A239-
1 p.
artikel
120 Weak localization and negative magnetoresistance in semiconductor two-dimensional systems Kawaji, S.
1986
170 1-2 p. A259-
1 p.
artikel
121 Word of welcome Nagamiya, Takeo
1986
170 1-2 p. A215-
1 p.
artikel
122 Yamada Science Foundation 1986
170 1-2 p. A216-
1 p.
artikel
                             122 gevonden resultaten
 
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