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Journal description
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Details for article 5 of 122 found articles
| Title: |
Activation gaps in the energy spectrum and influence of disorder under fractional quantum Hall effect in silicon MOSFET |
| Author: |
Kukushkin, I.V. Timofeev, V.B. |
| Appeared in: |
Surface science letters |
| Paging: | Volume 170 (1986) nr. 1-2 pages 1 p. |
| Year: |
1986 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 122 found articles
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