| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A LEED, AES and TDS study of very thin nitride film growth on Si(100) by direct thermal nitridation in NH3
|
Glachant, A.
|
|
1986
|
168 |
1-3 |
p. A138-
1 p.
|
artikel
|
| 2 |
Amorphous semiconductor heterojunctions: Technological impact
|
Perfetti, P.
|
|
1986
|
168 |
1-3 |
p. A129-
1 p.
|
artikel
|
| 3 |
An important problem: The interface band offsets
|
Voos, M.
|
|
1986
|
168 |
1-3 |
p. A146-
1 p.
|
artikel
|
| 4 |
Atomic geometries of zincblende compound semiconductor surfaces: Similarities in surface rehybridizations
|
Kahn, A.
|
|
1986
|
168 |
1-3 |
p. A108-
1 p.
|
artikel
|
| 5 |
Auger electron spectroscopy study of the epitaxial growth mode of (Ca, Sr)F2 on GaAs(100)
|
Fontaine, C.
|
|
1986
|
168 |
1-3 |
p. A138-
1 p.
|
artikel
|
| 6 |
Author index
|
|
|
1986
|
168 |
1-3 |
p. A147-A156
nvt p.
|
artikel
|
| 7 |
Calculation of Schottky barrier heights from semiconductor band structures
|
Tersoff, J.
|
|
1986
|
168 |
1-3 |
p. A120-
1 p.
|
artikel
|
| 8 |
CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization
|
Faurie, J.P.
|
|
1986
|
168 |
1-3 |
p. A128-
1 p.
|
artikel
|
| 9 |
Characterization of Cu/Si(100) interfaces by different surface-sensitive techniques
|
Mathiez, P.
|
|
1986
|
168 |
1-3 |
p. A115-
1 p.
|
artikel
|
| 10 |
Characterization of epitaxial ZnS films fabricated by sputtering in controlled H2S vapor
|
Kawakami, Yoichi
|
|
1986
|
168 |
1-3 |
p. A133-
1 p.
|
artikel
|
| 11 |
Chemical and morphological aspects of the build-up of the interface between InP(100) and column III metal overlayers
|
Houzay, F.
|
|
1986
|
168 |
1-3 |
p. A122-
1 p.
|
artikel
|
| 12 |
Cleanliness and pollution of Si(111) and Si(100) surfaces studied by AES
|
Vignes, J.-L.
|
|
1986
|
168 |
1-3 |
p. A110-
1 p.
|
artikel
|
| 13 |
Comments on round table discussion of future trends
|
Ho, PaulS.
|
|
1986
|
168 |
1-3 |
p. A146-
1 p.
|
artikel
|
| 14 |
Comparison between metal and electrolyte/(III–V) semiconductor interfaces
|
Allongue, Philippe
|
|
1986
|
168 |
1-3 |
p. A123-
1 p.
|
artikel
|
| 15 |
Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements
|
Pananakakis, G.
|
|
1986
|
168 |
1-3 |
p. A137-
1 p.
|
artikel
|
| 16 |
Concluding remarks - International conference on the formation of semiconductor interfaces
|
Lindau, I.
|
|
1986
|
168 |
1-3 |
p. A146-
1 p.
|
artikel
|
| 17 |
Coupled interface plasmons of the Ag-Si(111) system as investigated with high-resolution electron energy-loss spectroscopy
|
Layet, J.M.
|
|
1986
|
168 |
1-3 |
p. A114-
1 p.
|
artikel
|
| 18 |
Defective heterojunction models
|
Freeouf, J.L.
|
|
1986
|
168 |
1-3 |
p. A129-A130
nvt p.
|
artikel
|
| 19 |
Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
|
Hermas, A.
|
|
1986
|
168 |
1-3 |
p. A137-
1 p.
|
artikel
|
| 20 |
Depth profiling of plasma anodized SiO2/Si interface structures by using X-ray photoelectron spectroscopy
|
Suda, Kakutaro
|
|
1986
|
168 |
1-3 |
p. A136-A137
nvt p.
|
artikel
|
| 21 |
Do we understand heterojunction band discontinuities?
|
Margaritondo, G.
|
|
1986
|
168 |
1-3 |
p. A127-
1 p.
|
artikel
|
| 22 |
Early stages in the formation of the oxide-InP(110) interface
|
Hollinger, G.
|
|
1986
|
168 |
1-3 |
p. A135-
1 p.
|
artikel
|
| 23 |
Editorial Board
|
|
|
1986
|
168 |
1-3 |
p. IFC-
1 p.
|
artikel
|
| 24 |
Effect of valency in metal adsorption on Si(111): The case of Sb on the cleaved surface
|
Taleb-Ibrahimi, A.
|
|
1986
|
168 |
1-3 |
p. A113-
1 p.
|
artikel
|
| 25 |
Electron energy-loss spectroscopy of Ni2Si: Valence collective excitation and structural properties
|
Betti, M.G.
|
|
1986
|
168 |
1-3 |
p. A117-
1 p.
|
artikel
|
| 26 |
Electronic properties of the InP(100) surface
|
Moison, J.M.
|
|
1986
|
168 |
1-3 |
p. A111-
1 p.
|
artikel
|
| 27 |
Electronic structure of (100) semiconductor heterojunctions
|
Platero, G.
|
|
1986
|
168 |
1-3 |
p. A131-
1 p.
|
artikel
|
| 28 |
Electronic structure of Si(111) surfaces with group III Ad-atoms
|
Hansson, G.V.
|
|
1986
|
168 |
1-3 |
p. A112-
1 p.
|
artikel
|
| 29 |
Experimental evidence of GaP states in metal-GaAs interfaces
|
Chekir, F.
|
|
1986
|
168 |
1-3 |
p. A145-
1 p.
|
artikel
|
| 30 |
Film and interface properties of epitaxial metal/insulator/semiconductor systems formed by ionized cluster beam deposition
|
Yamada, I.
|
|
1986
|
168 |
1-3 |
p. A123-
1 p.
|
artikel
|
| 31 |
First stages of the Mo/Si(III) interface formation: An UPS, LEED and Auger study
|
Balaska, H.
|
|
1986
|
168 |
1-3 |
p. A118-
1 p.
|
artikel
|
| 32 |
Formation and properties of (Au, Al, Ag, In) (InP-GaAs) Schottky diodes; contribution of the semiconductor surface to the diode characteristics
|
Lassabatère, L.
|
|
1986
|
168 |
1-3 |
p. A122-
1 p.
|
artikel
|
| 33 |
Formation of noble-metal-Si(100) interfaces
|
Hanbücken, M.
|
|
1986
|
168 |
1-3 |
p. A113-
1 p.
|
artikel
|
| 34 |
GaAs/Ga1-x Al xAs and Ga1-xAlxAs/GaAs heterointerfaces grown by molecular beam epitaxy
|
Alexandre, F.
|
|
1986
|
168 |
1-3 |
p. A127-
1 p.
|
artikel
|
| 35 |
Growth and characterization of IV–VI superlattices
|
Bauer, G.
|
|
1986
|
168 |
1-3 |
p. A128-
1 p.
|
artikel
|
| 36 |
Heterojunction band discontinuities for GaAs grown on Ge(110): Time variation
|
Grant, R.W.
|
|
1986
|
168 |
1-3 |
p. A129-
1 p.
|
artikel
|
| 37 |
High-resolution electron microscopy of the initial stages of CoSi2 formation on Si(111)
|
D'Anterroches, Cécile
|
|
1986
|
168 |
1-3 |
p. A141-
1 p.
|
artikel
|
| 38 |
High-resolution infrared spectroscopy of adsorbates on semiconductor surfaces: Hydrogen on Si(100) and Ge(100)
|
Chabal, Y.J.
|
|
1986
|
168 |
1-3 |
p. A134-
1 p.
|
artikel
|
| 39 |
High-resolution rutherford backscattering spectrometry of metal-silicon interfaces
|
Van Der Veen, J.F.
|
|
1986
|
168 |
1-3 |
p. A139-
1 p.
|
artikel
|
| 40 |
Importance of coulomb correlation in silicide spectra
|
Calandra, C.
|
|
1986
|
168 |
1-3 |
p. A115-
1 p.
|
artikel
|
| 41 |
Initial formation process of metal/silicon interfaces
|
Hiraki, Akio
|
|
1986
|
168 |
1-3 |
p. A111-
1 p.
|
artikel
|
| 42 |
Initial stages of the Schottky-barrier formation for abrupt covalent interfaces
|
Platero, G.
|
|
1986
|
168 |
1-3 |
p. A112-
1 p.
|
artikel
|
| 43 |
Interface structure in heteroepitaxial CdTe on GaAs(100)
|
Ponce, F.A.
|
|
1986
|
168 |
1-3 |
p. A132-
1 p.
|
artikel
|
| 44 |
Inverse and direct photoemission experiments (UV range) of the Si/Ni interfaces
|
Azizan, M.
|
|
1986
|
168 |
1-3 |
p. A118-
1 p.
|
artikel
|
| 45 |
Inverse photoemission as a probe for unoccupied electronic states
|
Himpsel, F.J.
|
|
1986
|
168 |
1-3 |
p. A141-
1 p.
|
artikel
|
| 46 |
Investigation of electronic properties of semiconductor interfaces and layer systems by electron energy-loss spectroscopy
|
Lüth, Hans
|
|
1986
|
168 |
1-3 |
p. A142-
1 p.
|
artikel
|
| 47 |
Investigation of interfacial reactions between thin films of gold and substrates of gallium arsenide by transmission electron microscopy
|
Bauer, C.L.
|
|
1986
|
168 |
1-3 |
p. A124-A125
nvt p.
|
artikel
|
| 48 |
Investigation of metal-semiconductor interface states by constant emission rate and constant capture rate capacitance spectroscopies
|
Muret, P.
|
|
1986
|
168 |
1-3 |
p. A145-
1 p.
|
artikel
|
| 49 |
Ion-beam-induced amorphization of silicon surfaces: Role on the formation of Au/Si(100) interfaces
|
Carrière, B.
|
|
1986
|
168 |
1-3 |
p. A114-
1 p.
|
artikel
|
| 50 |
Leed studies of defects at surfaces and interfaces
|
Henzler, M.
|
|
1986
|
168 |
1-3 |
p. A140-A141
nvt p.
|
artikel
|
| 51 |
Local structure determination of the Co-Si(111) interface by surface electron energy-loss fine-structure technique
|
Chaînet, E.
|
|
1986
|
168 |
1-3 |
p. A143-
1 p.
|
artikel
|
| 52 |
Metal contacts to semiconductors, indium phosphide and cadmium telluride
|
Williams, R.H.
|
|
1986
|
168 |
1-3 |
p. A122-
1 p.
|
artikel
|
| 53 |
Misfit strains in semiconductor superlattices
|
Voisin, Paul
|
|
1986
|
168 |
1-3 |
p. A131-
1 p.
|
artikel
|
| 54 |
Modeling homogeneous and heterogeneous metal/semiconductor interface reactions with photoemission and angle-resolved Auger spectroscopy
|
Del Giudice, M.
|
|
1986
|
168 |
1-3 |
p. A121-
1 p.
|
artikel
|
| 55 |
Molecular beam epitaxy of insulating fluoride-semiconductor heterostructures
|
Munoz-Yague, A.
|
|
1986
|
168 |
1-3 |
p. A135-
1 p.
|
artikel
|
| 56 |
Non-equilibrium depletion relaxation at silicon surfaces in strong electric fields
|
Kirillova, S.I.
|
|
1986
|
168 |
1-3 |
p. A136-
1 p.
|
artikel
|
| 57 |
On the evaporation rate of silicon
|
Souchière, J.L.
|
|
1986
|
168 |
1-3 |
p. A110-
1 p.
|
artikel
|
| 58 |
On the oxidation of III–V compound semiconductors
|
Mönch, Winfried
|
|
1986
|
168 |
1-3 |
p. A133-
1 p.
|
artikel
|
| 59 |
Optical and electron energy-loss spectra of Si(111)2 x 1
|
Selloni, A.
|
|
1986
|
168 |
1-3 |
p. A109-
1 p.
|
artikel
|
| 60 |
Optical investigations of GaAs-Ga(Al)As interfaces in quantum wells
|
|
|
1986
|
168 |
1-3 |
p. A130-
1 p.
|
artikel
|
| 61 |
Order and structure of semiconductor surfaces: An assessment with He diffraction
|
Cardillo, M.J.
|
|
1986
|
168 |
1-3 |
p. A140-
1 p.
|
artikel
|
| 62 |
Photoemission study of a single GaAlAs/GaAs/GaAlAs quantum well
|
Houdré, R.
|
|
1986
|
168 |
1-3 |
p. A130-A131
nvt p.
|
artikel
|
| 63 |
Preface
|
|
|
1986
|
168 |
1-3 |
p. A107-
1 p.
|
artikel
|
| 64 |
Promoting and characterizing new chemical structure at metal-semiconductor interfaces
|
Brillson, L.J.
|
|
1986
|
168 |
1-3 |
p. A119-
1 p.
|
artikel
|
| 65 |
Rayleigh scattering from single-site polysylane adsorbed on silicon: Theory
|
Wijers, C.M.J.
|
|
1986
|
168 |
1-3 |
p. A144-
1 p.
|
artikel
|
| 66 |
Rheed studies of heterojunction and quantum well formation during MBE growth-from multiple scattering to band offsets
|
Joyce, B.A.
|
|
1986
|
168 |
1-3 |
p. A126-
1 p.
|
artikel
|
| 67 |
Round table discussion
|
|
|
1986
|
168 |
1-3 |
p. A146-
1 p.
|
artikel
|
| 68 |
Scanning Auger microscopy for the characterization of very thin epitaxial layers in III–V compounds
|
Bresse, J.F.
|
|
1986
|
168 |
1-3 |
p. A144-
1 p.
|
artikel
|
| 69 |
Scanning tunneling microscopy of nanocrystalline silicon surfaces
|
Gimzewski, J.K.
|
|
1986
|
168 |
1-3 |
p. A143-
1 p.
|
artikel
|
| 70 |
Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces
|
Ho, P.S.
|
|
1986
|
168 |
1-3 |
p. A116-
1 p.
|
artikel
|
| 71 |
Schottky barrier formation in CdTe crystal
|
Mamiński, J.A.
|
|
1986
|
168 |
1-3 |
p. A126-
1 p.
|
artikel
|
| 72 |
Sem observations of Ag surface diffusion at the Si(111) √3-Ag interface
|
Hanbücken, M.
|
|
1986
|
168 |
1-3 |
p. A113-A114
nvt p.
|
artikel
|
| 73 |
Silicon MBE: Recent developments
|
D'Avitaya, F.Arnaud
|
|
1986
|
168 |
1-3 |
p. A128-
1 p.
|
artikel
|
| 74 |
Si(111) surface oxidation: O 1s core-level study using synchrotron radiation
|
Hollinger, G.
|
|
1986
|
168 |
1-3 |
p. A134-
1 p.
|
artikel
|
| 75 |
Some recent results on low-temperature studies of cleaved Si and Ge surfaces
|
Grazhulis, V.A.
|
|
1986
|
168 |
1-3 |
p. A108-
1 p.
|
artikel
|
| 76 |
Structural and electronic properties of CoSi2 epitaxially grown on Si(111)
|
Derrien, J.
|
|
1986
|
168 |
1-3 |
p. A115-A116
nvt p.
|
artikel
|
| 77 |
Structure analysis of Ag overlayers on Si(111) by low-energy Li+ ion scattering
|
Aono, M.
|
|
1986
|
168 |
1-3 |
p. A139-
1 p.
|
artikel
|
| 78 |
Study of the cancellation of the lattice mismatch in GaSb-AlSb superlattices
|
Calleja, J.M.
|
|
1986
|
168 |
1-3 |
p. A132-
1 p.
|
artikel
|
| 79 |
Study of the interaction of plasmas with III–V semiconductor surfaces, application to passivation
|
Friedel, P.
|
|
1986
|
168 |
1-3 |
p. A136-
1 p.
|
artikel
|
| 80 |
Subject index
|
|
|
1986
|
168 |
1-3 |
p. A156-A173
nvt p.
|
artikel
|
| 81 |
Summary of the round table discussion: Future trends
|
|
|
1986
|
168 |
1-3 |
p. A146-
1 p.
|
artikel
|
| 82 |
Synchrotron radiation studies of the effect of thermal treatment on the Si(111)-Yb interfaces
|
Braicovich, L.
|
|
1986
|
168 |
1-3 |
p. A116-
1 p.
|
artikel
|
| 83 |
The adsorption of oxygen on InP cleaved surfaces and its influence on Schottky barrier properties
|
Ismail, A.
|
|
1986
|
168 |
1-3 |
p. A125-
1 p.
|
artikel
|
| 84 |
The effect of surface preparation and properties on Ag-GaAs (100) Schottky diodes
|
Ismail, A.
|
|
1986
|
168 |
1-3 |
p. A124-
1 p.
|
artikel
|
| 85 |
The effect of surface states and band bending change on reflectivity of cleaved GaAs(110) and GaP(110)
|
Ciccacci, F.
|
|
1986
|
168 |
1-3 |
p. A108-
1 p.
|
artikel
|
| 86 |
The effect of surface stress on the reconstruction of the Si(111) surface
|
Pearson, E.
|
|
1986
|
168 |
1-3 |
p. A109-
1 p.
|
artikel
|
| 87 |
The effects of microstructure on interface characterization
|
Ludeke, R.
|
|
1986
|
168 |
1-3 |
p. A120-
1 p.
|
artikel
|
| 88 |
The formation of the Au-GaAs(001) interface
|
Andersson, ThorwaldG.
|
|
1986
|
168 |
1-3 |
p. A121-
1 p.
|
artikel
|
| 89 |
The InP/Sb interface studied by Raman scattering
|
Zahn, D.
|
|
1986
|
168 |
1-3 |
p. A144-A145
nvt p.
|
artikel
|
| 90 |
The mechanisms of Schottky barrier pinning in III–V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments
|
Spicer, W.E.
|
|
1986
|
168 |
1-3 |
p. A119-
1 p.
|
artikel
|
| 91 |
Theoretical interpretation of Schottky barriers and ohmic contacts
|
Allen, RolandE.
|
|
1986
|
168 |
1-3 |
p. A123-A124
nvt p.
|
artikel
|
| 92 |
Theoretical models of metal-semiconductor contacts
|
Schluter, M.
|
|
1986
|
168 |
1-3 |
p. A120-
1 p.
|
artikel
|
| 93 |
Thermally-induced reactions at Pt-GaAs junctions
|
Cros, A.
|
|
1986
|
168 |
1-3 |
p. A125-
1 p.
|
artikel
|
| 94 |
Thin film reactions on silicon surfaces and the quality of metal-semiconductor interfaces
|
Morgen, P.
|
|
1986
|
168 |
1-3 |
p. A117-
1 p.
|
artikel
|
| 95 |
Thin films of solid solutions of fluorides for epitaxy on III–V semiconductors
|
Barrière, A.S.
|
|
1986
|
168 |
1-3 |
p. A138-A139
nvt p.
|
artikel
|
| 96 |
Trends in quantum well devices
|
Noblanc, J.P.
|
|
1986
|
168 |
1-3 |
p. A146-
1 p.
|
artikel
|
| 97 |
Tunneling microscopy and spectroscopy of semiconductor surfaces and interfaces
|
Baratoff, A.
|
|
1986
|
168 |
1-3 |
p. A140-
1 p.
|
artikel
|
| 98 |
X-ray absorption resonance spectroscopy as a local probe of the electronic structure at metal-semiconductor interfaces and silicides: Pt/Si, Pd/Si, and Yb/Si
|
Rossi, G.
|
|
1986
|
168 |
1-3 |
p. A142-
1 p.
|
artikel
|
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