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                             98 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Alloy scattering limited mobility of two-dimensional electron gas formed in In0.53Ga0.47As Basu, P.K.
 1984
 142 1-3 p. A246-
1 p.
 artikel
2 Analysis of quantized hall resistance at finite temperatures Tausendfreund, B.
 1984
 142 1-3 p. A244-
1 p.
 artikel
3 A new two-dimensional electron system on the surface of solid neon Kajita, K.
 1984
 142 1-3 p. A235-
1 p.
 artikel
4 Anomalous magneto-transport properties of p-type germanium inversion layers at very low temperatures Remenyi, G.
 1984
 142 1-3 p. A231-
1 p.
 artikel
5 Author index 1984
 142 1-3 p. A268-A277
nvt p.
 artikel
6 Bound electron states of coulombic impurities and their effect on mobility in inversion layers Green, F.
 1984
 142 1-3 p. A248-
1 p.
 artikel
7 Collective modes of type II semiconductor superlattices Tselis, A.
 1984
 142 1-3 p. A259-
1 p.
 artikel
8 Coulomb inelastic lifetime of a quasi-particle in a two-dimensional electron gas Giuliani, GabrieleF.
 1984
 142 1-3 p. A231-
1 p.
 artikel
9 Critical electron density at the liquid helium surface Shikin, V.B.
 1984
 142 1-3 p. A235-
1 p.
 artikel
10 Cyclotron resonance and polaron effects in a two-dimensional electron gas in GaInAs Brummell, M.A.
 1984
 142 1-3 p. A255-
1 p.
 artikel
11 Cyclotron resonance of two-dimensional electrons in AlxGa1−xAs / GaAs heterojunction Muro, K.
 1984
 142 1-3 p. A256-
1 p.
 artikel
12 Cyclotron resonance studies of screening and polaron effects in GaAs-AlGaAs heterostructures Seidenbusch, W.
 1984
 142 1-3 p. A255-
1 p.
 artikel
13 De Haas-Van Alphen effect in silicon inversion layers Fang, F.F.
 1984
 142 1-3 p. A249-
1 p.
 artikel
14 Dependence of interface state density on the atomic roughness at the Si-SiO2 interface Hahn, PeterO.
 1984
 142 1-3 p. A264-
1 p.
 artikel
15 Dimensionality crossover of spin-orbit scattering observed via localization effects Markiewicz, R.S.
 1984
 142 1-3 p. A232-
1 p.
 artikel
16 Dynamics of dislocation mediated melting of a two-dimensional electron lattice Mast, D.B.
 1984
 142 1-3 p. A235-
1 p.
 artikel
17 Editorial Board 1984
 142 1-3 p. IFC-
1 p.
 artikel
18 Effects of electron heating on the two-dimensional magnetotransport in AlGaAs / GaAs heterostructures Sasaki, H.
 1984
 142 1-3 p. A251-
1 p.
 artikel
19 Electric subbands in the limit EG → 0 Scholz, J.
 1984
 142 1-3 p. A259-
1 p.
 artikel
20 Electron-phonon interaction and screening effects in quasi-two-dimensional electron systems Das Sarma, S.
 1984
 142 1-3 p. A253-
1 p.
 artikel
21 Electrons on helium — the “polaron” transition Andrei, E.Y.
 1984
 142 1-3 p. A236-
1 p.
 artikel
22 Experiments on literally two-dimensional magnets Pomerantz, Melvin
 1984
 142 1-3 p. A265-
1 p.
 artikel
23 Fractional quantum hall effect at low temperatures Chang, A.M.
 1984
 142 1-3 p. A239-A240
nvt p.
 artikel
24 Hydrostatic pressure control of the carrier density in GaAs / GaAlAs heterostructures; Role of the metastable deep levels Mercy, J.M.
 1984
 142 1-3 p. A250-
1 p.
 artikel
25 Infrared studies of the GaAs / (GaAl)As two-dimensional electron gas Schlesinger, Z.
 1984
 142 1-3 p. A258-
1 p.
 artikel
26 Interaction between electronic and phonon Raman scattering in hole space charge layers on silicon Baumgartner, M.
 1984
 142 1-3 p. A253-
1 p.
 artikel
27 Interband scattering in mobility in GaAs-GaAlAs heterostructures Toan Thang, Nguyen
 1984
 142 1-3 p. A247-
1 p.
 artikel
28 Interface optic phonons and magneto-phonon effect in polar double heterostructures Lassnig, R.
 1984
 142 1-3 p. A254-
1 p.
 artikel
29 Intersubband resonance of holes and interaction with 2D plasmons on Si Wieck, A.D.
 1984
 142 1-3 p. A259-
1 p.
 artikel
30 Intrasubband plasma modes of a semi-infinite superlattice: A new type of surface wave Giuliani, GabrieleF.
 1984
 142 1-3 p. A258-A259
nvt p.
 artikel
31 Investigation of optical processes in a semiconductor 2D electron plasma Pinczuk, A.
 1984
 142 1-3 p. A262-
1 p.
 artikel
32 Landau levels and magneto-optics of semiconductor superlattices Fasolino, A.
 1984
 142 1-3 p. A252-
1 p.
 artikel
33 Localization of 2D electrons in GaAs-AlxGa1− xAs heterostructures Paalanen, M.A.
 1984
 142 1-3 p. A230-
1 p.
 artikel
34 Localization of inversion electrons on InP Hansen, W.
 1984
 142 1-3 p. A232-
1 p.
 artikel
35 Logarithmic corrections to the conductivity of a two-dimensional hole gas Gusev, G.M.
 1984
 142 1-3 p. A233-A234
nvt p.
 artikel
36 Magnetic field dependence of 2D sodium impurity band conduction in activated regions Reisinger, H.
 1984
 142 1-3 p. A248-
1 p.
 artikel
37 Magnetization measurements on a two-dimensional electron system Haavasoja, T.
 1984
 142 1-3 p. A249-A250
nvt p.
 artikel
38 Magnetization, specific heat, magneto-thermal effect and thermoelectric power of two-dimensional electron gas in a quantizing magnetic field Zawadzki, Wlodek
 1984
 142 1-3 p. A244-
1 p.
 artikel
39 Magnetoconductance and quantized confinement in narrow silicon inversion layers Skocpol, W.J.
 1984
 142 1-3 p. A229-
1 p.
 artikel
40 Magneto-optical studies of two-dimensional electrons in MQW heterostructures Worlock, J.M.
 1984
 142 1-3 p. A261-
1 p.
 artikel
41 Magneto-optics in a II–VI superlattice: HgTe-CdTe Guldner, Y.
 1984
 142 1-3 p. A266-A267
nvt p.
 artikel
42 Magneto-transport in two dimensions: Some numerical results MacKinnon, A.
 1984
 142 1-3 p. A241-
1 p.
 artikel
43 Multiple connected quantized resistance regions Syphers, D.A.
 1984
 142 1-3 p. A243-
1 p.
 artikel
44 Negative and positive magnetoresistance in Cs adsorbed Si(111) n-inversion layers Kawaguchi, Yoichi
 1984
 142 1-3 p. A234-
1 p.
 artikel
45 Negative magnetoresistance of (100) n-Si mosfets under substrate bias Hönlein, W.
 1984
 142 1-3 p. A234-
1 p.
 artikel
46 New experimental results for electron transport in weak accumulation layers on ZnO crystals Thoren, W.
 1984
 142 1-3 p. A266-
1 p.
 artikel
47 New multilayer and graded gap optoelectronic and high speed devices by band gap engineering Capasso, F.
 1984
 142 1-3 p. A263-
1 p.
 artikel
48 Non-equilibrium behaviour of the two-dimensional electron gas in the quantized hall resistance regime of GaAs / Al0.3Ga0.7As Kuchar, F.
 1984
 142 1-3 p. A242-
1 p.
 artikel
49 Novel physics in two dimensions with modulation-doped heterostructures Störmer, H.L.
 1984
 142 1-3 p. A238-
1 p.
 artikel
50 One-dimensional conductance in silicon mosfet's Hartstein, A.
 1984
 142 1-3 p. A229-
1 p.
 artikel
51 Optical and electrical properties of PbTe-Pb1−xSnxTe superlattices prepared on KCl by A HWE Fujiyasu, H.
 1984
 142 1-3 p. A265-A266
nvt p.
 artikel
52 Optical Properties of Strained InxGa1−xAs multi quantum well structures Marzin, J.-Y.
 1984
 142 1-3 p. A263-
1 p.
 artikel
53 Optical studies of semiconductor superlattices Voisin, Paul
 1984
 142 1-3 p. A261-
1 p.
 artikel
54 Oscillatory magnetoresistance of GaAs / GaAlAs quantum well structures under parallel magnetic fields Yoshino, J.
 1984
 142 1-3 p. A252-
1 p.
 artikel
55 Phonon scattering of electrons in quasi-one-dimensional and quasi-two-dimensional quantum wells Riddoch, F.A.
 1984
 142 1-3 p. A247-
1 p.
 artikel
56 Photoconductivity on GaAs-AlxGa1−xAs heterostructures Stein, D.
 1984
 142 1-3 p. A257-
1 p.
 artikel
57 Photoluminescence and excitation spectroscopy in coupled GaAs-Ga(Al)As quantum wells Delalande, C.
 1984
 142 1-3 p. A262-
1 p.
 artikel
58 Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells Shanabrook, B.V.
 1984
 142 1-3 p. A263-
1 p.
 artikel
59 Plasmon and intersubband modes of a superlattice — classical versus quantum limits Bloss, W.L.
 1984
 142 1-3 p. A258-
1 p.
 artikel
60 Preface Nicholas, R.J.
 1984
 142 1-3 p. A227-
1 p.
 artikel
61 Primitive and composite ground states in the fractional quantum hall effect Laughlin, R.B.
 1984
 142 1-3 p. A239-
1 p.
 artikel
62 Properties of n-i-p-i doping superlattices in III–V and IV–VI semiconductors Döhler, G.H.
 1984
 142 1-3 p. A261-
1 p.
 artikel
63 Quantized hall effect in single quantum wells of InAs Mendez, E.E.
 1984
 142 1-3 p. A243-
1 p.
 artikel
64 Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature Guldner, Y.
 1984
 142 1-3 p. A240-
1 p.
 artikel
65 Quantum hall effect: A sum rule Chalker, J.T.
 1984
 142 1-3 p. A241-
1 p.
 artikel
66 Quantum oscillations in small rings at low temperatures Gefen, Yuval
 1984
 142 1-3 p. A242-
1 p.
 artikel
67 Quantum transport in semimagnetic HgMnTe inversion layers — experiment and theory Grabecki, G.
 1984
 142 1-3 p. A266-
1 p.
 artikel
68 Quantum wells of InAs between AlSb Chang, C.A.
 1984
 142 1-3 p. A267-
1 p.
 artikel
69 Quasi-one-dimensional effects in submicron width silicon inversion layers Wheeler, R.G.
 1984
 142 1-3 p. A229-
1 p.
 artikel
70 Resonant tunneling in doping quantum well structures Zeller, Ch.
 1984
 142 1-3 p. A260-
1 p.
 artikel
71 Scattering and adsorption of ballistic phonons by the electron inversion layer in silicon: theory and experiment Hensel, J.C.
 1984
 142 1-3 p. A246-
1 p.
 artikel
72 Self-consistent variational calculations and alloy scattering in semiconductor heterojunctions Bastard, G.
 1984
 142 1-3 p. A249-
1 p.
 artikel
73 Strongly-coupled ripplonic polarons in high magnetic fields Saitoh, Motohiko
 1984
 142 1-3 p. A236-A237
nvt p.
 artikel
74 Structural and electronic properties of PbTe/Pb1−xSnxTe superlattices Ambrosch, K.E.
 1984
 142 1-3 p. A265-
1 p.
 artikel
75 Subbands in back-gated heterojunctions Vinter, B.
 1984
 142 1-3 p. A260-
1 p.
 artikel
76 Subject index 1984
 142 1-3 p. A278-A286
nvt p.
 artikel
77 Surface cyclotron resonance in a strong B‖ Zhao, Wen-qin
 1984
 142 1-3 p. A256-
1 p.
 artikel
78 The complex capacitance of Si inversion layers in the quantized resistance regime Zhao, L.C.
 1984
 142 1-3 p. A252-A253
nvt p.
 artikel
79 The effect of interface charge on the quantum hall effect Furneaux, J.E.
 1984
 142 1-3 p. A241-
1 p.
 artikel
80 The ground state of the 2D electrons in a strong magnetic field and the anomalous quantized hall effect Yoshioka, D.
 1984
 142 1-3 p. A238-A239
nvt p.
 artikel
81 Theory of impurity band conductivity in inversion layers in magnetic fields Kramer, G.M.
 1984
 142 1-3 p. A248-
1 p.
 artikel
82 Theory of resonant polarons in narrow gap semiconductors Lassnig, R.
 1984
 142 1-3 p. A256-
1 p.
 artikel
83 Theory of the quantized hall effect Thouless, D.J.
 1984
 142 1-3 p. A238-
1 p.
 artikel
84 The polaronic state of two-dimensional electrons on the surface of liquid helium Jackson, S.A.
 1984
 142 1-3 p. A237-
1 p.
 artikel
85 Thermoelectric effects in silicon mosfets in high magnetic fields Smith, R.P.
 1984
 142 1-3 p. A245-
1 p.
 artikel
86 Thermoelectric power of superlattices Friedman, Lionel
 1984
 142 1-3 p. A245-
1 p.
 artikel
87 Thermopower measurements on the two-dimensional electron gas of GaAs-AlxGa1−xAs heterostructures Obloh, H.
 1984
 142 1-3 p. A245-
1 p.
 artikel
88 Topological defects and melting of wigner solid on corrugated surfaces Vashishta, P.
 1984
 142 1-3 p. A237-
1 p.
 artikel
89 Transport studies in single-crystal films of CoSi2 and NiSi2; A new class of quasi-two-dimensional metals Hensel, J.C.
 1984
 142 1-3 p. A230-
1 p.
 artikel
90 Tunneling spectroscopy of landau levels in electron inversion layers on (100) Si surfaces Kunze, U.
 1984
 142 1-3 p. A251-
1 p.
 artikel
91 Two-dimensional electronic systems for high-speed device applications Pearsall, ThomasP.
 1984
 142 1-3 p. A264-
1 p.
 artikel
92 Two-dimensional electrons trapped on a helium surface Degani, MarcosH.
 1984
 142 1-3 p. A236-
1 p.
 artikel
93 Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices Portal, J.C.
 1984
 142 1-3 p. A254-
1 p.
 artikel
94 Two-dimensional plasmons and far infrared emission Höpfel, RalphA.
 1984
 142 1-3 p. A257-
1 p.
 artikel
95 Use of capacitance techniques in the study of two-dimensional layers in silicon MOSFETs Goodall, R.K.
 1984
 142 1-3 p. A253-
1 p.
 artikel
96 Weak localization and interaction effects in two dimensions Davies, R.A.
 1984
 142 1-3 p. A230-
1 p.
 artikel
97 Weak localization effects in GaAs doping superlattices Englert, Th.
 1984
 142 1-3 p. A233-
1 p.
 artikel
98 Weak localization in metallic thin films Komori, F.
 1984
 142 1-3 p. A233-
1 p.
 artikel
                             98 gevonden resultaten
 
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