| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels
|
Wille, Ada
|
|
2014
|
44 |
5 |
p. 1263-1267
|
artikel
|
| 2 |
Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires
|
Hainey, Mel
|
|
2014
|
44 |
5 |
p. 1332-1337
|
artikel
|
| 3 |
Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers
|
Wu, Fangzhen
|
|
2014
|
44 |
5 |
p. 1293-1299
|
artikel
|
| 4 |
Comparison of Gas Sensors Based on Oxygen Plasma-Treated Carbon Nanotube Network Films with Different Semiconducting Contents
|
Ham, Seung Woo
|
|
2014
|
44 |
5 |
p. 1344-1350
|
artikel
|
| 5 |
Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices
|
Rishinaramangalam, Ashwin K.
|
|
2014
|
44 |
5 |
p. 1255-1262
|
artikel
|
| 6 |
Defect-Related Luminescence in Undoped GaN Grown by HVPE
|
Reshchikov, M.A.
|
|
2014
|
44 |
5 |
p. 1281-1286
|
artikel
|
| 7 |
Effect of Diffusion Control Layer on Reverse Al-Induced Layer Exchange Process for High-Quality Ge/Al/Glass Structure
|
Nakazawa, K.
|
|
2014
|
44 |
5 |
p. 1377-1381
|
artikel
|
| 8 |
Effects of Lattice Relaxation on Composition and Morphology in Strained InxGa1−xAsySb1−y Epitaxial Layers
|
Meyer, Charles
|
|
2015
|
44 |
5 |
p. 1311-1320
|
artikel
|
| 9 |
Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation
|
Mahadik, N.A.
|
|
2015
|
44 |
5 |
p. 1306-1310
|
artikel
|
| 10 |
Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer
|
Dodd, Linzi E.
|
|
2015
|
44 |
5 |
p. 1361-1366
|
artikel
|
| 11 |
Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes
|
Renteria, E. J.
|
|
2015
|
44 |
5 |
p. 1327-1331
|
artikel
|
| 12 |
Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor
|
Sbrockey, Nick M.
|
|
2014
|
44 |
5 |
p. 1357-1360
|
artikel
|
| 13 |
Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire
|
Chiba, Hiroshi
|
|
2014
|
44 |
5 |
p. 1351-1356
|
artikel
|
| 14 |
Low Temperature, Rapid Thermal Cycle Annealing of HgCdTe Grown on CdTe/Si
|
Simingalam, Sina
|
|
2014
|
44 |
5 |
p. 1321-1326
|
artikel
|
| 15 |
Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers
|
Artemiev, Dmitry M.
|
|
2015
|
44 |
5 |
p. 1287-1292
|
artikel
|
| 16 |
Novel Materials with Effective Super Dielectric Constants for Energy Storage
|
Cortes, Francisco Javier Quintero
|
|
2015
|
44 |
5 |
p. 1367-1376
|
artikel
|
| 17 |
Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications
|
Ekinci, Huseyin
|
|
2015
|
44 |
5 |
p. 1300-1305
|
artikel
|
| 18 |
Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)
|
O’Brien, William A.
|
|
2015
|
44 |
5 |
p. 1338-1343
|
artikel
|
| 19 |
Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
|
Wang, H.
|
|
2014
|
44 |
5 |
p. 1268-1274
|
artikel
|
| 20 |
Thermal Resistance Extraction of AlGaN/GaN Depletion-Mode HEMTs on Diamond
|
Wu, Jianzhi
|
|
2014
|
44 |
5 |
p. 1275-1280
|
artikel
|
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