Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers
Titel:
Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers
Auteur:
Wu, Fangzhen Wang, Huanhuan Raghothamachar, Balaji Dudley, Michael Chung, Gil Zhang, Jie Thomas, Bernd Sanchez, Edward K. Mueller, Stephan G. Hansen, Darren Loboda, Mark J. Zhang, Lihua Su, Dong Kisslinger, Kim Stach, Eric