nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A Low-Temperature Bonding Process Using Mixed Cu–Ag Nanoparticles
|
Morisada, Y. |
|
2010 |
39 |
8 |
p. 1283-1288 |
artikel |
2 |
Carboxylate-Passivated Silver Nanoparticles and Their Application to Sintered Interconnection: A Replacement for High Temperature Lead-Rich Solders
|
Ogura, Hiroshi |
|
2010 |
39 |
8 |
p. 1233-1240 |
artikel |
3 |
Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al2O3
|
Hullavarad, S. S. |
|
2010 |
39 |
8 |
p. 1209-1217 |
artikel |
4 |
Characterization by Internal Photoemission Spectroscopy of Single-Crystal CVD Diamond Schottky Barrier Diodes
|
Majdi, Saman |
|
2010 |
39 |
8 |
p. 1203-1208 |
artikel |
5 |
Comparative Study on the Properties of Galvanically Deposited Nano- and Microcrystalline Thin Films of PbSe
|
Mukherjee, Nillohit |
|
2010 |
39 |
8 |
p. 1177-1185 |
artikel |
6 |
Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples
|
Wang, Chao-hong |
|
2010 |
39 |
8 |
p. 1303-1308 |
artikel |
7 |
Critical Layer Thickness in Exponentially Graded Heteroepitaxial Layers
|
Sidoti, D. |
|
2010 |
39 |
8 |
p. 1140-1145 |
artikel |
8 |
Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability
|
Rodríguez, A. |
|
2010 |
39 |
8 |
p. 1194-1202 |
artikel |
9 |
Crystallographically Faceted Void Formation in the Matrix of Lead-Free Solder Joints
|
Belyakov, S. |
|
2010 |
39 |
8 |
p. 1295-1297 |
artikel |
10 |
Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding
|
Kanbe, Hiroshi |
|
2010 |
39 |
8 |
p. 1248-1255 |
artikel |
11 |
Dielectric and Electrical Conductivity Relaxation in 0.5Li2O-0.5Na2O-2B2O3 Glasses
|
Vaish, Rahul |
|
2010 |
39 |
8 |
p. 1334-1342 |
artikel |
12 |
Effective Permittivity Calculation of Composites with Interpenetrating Phases
|
Zeng, Yu |
|
2010 |
39 |
8 |
p. 1351-1357 |
artikel |
13 |
Effect of Ag Content on Solidification Cracking Susceptibility of Sn-Ag-Cu Solder Joints
|
Lu, Wei |
|
2010 |
39 |
8 |
p. 1298-1302 |
artikel |
14 |
Effects of Current Stressing on Formation and Evolution of Kirkendall Voids at Sn–3.5Ag/Cu Interface
|
Yu, C. |
|
2010 |
39 |
8 |
p. 1309-1314 |
artikel |
15 |
Electrical Conductivity of Graphene Composites with In and In-Ga Alloy
|
Sruti, A. Naga |
|
2010 |
39 |
8 |
p. 1268-1276 |
artikel |
16 |
Electron–Electron Interactions in Sb-Doped SnO2 Thin Films
|
Serin, Tülay |
|
2010 |
39 |
8 |
p. 1152-1158 |
artikel |
17 |
Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing
|
Carder, D.A. |
|
2010 |
39 |
8 |
p. 1262-1267 |
artikel |
18 |
High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding
|
Bahk, Je-Hyeong |
|
2010 |
39 |
8 |
p. 1125-1132 |
artikel |
19 |
Improved Thermoelectric Performance and Mechanical Properties of Nanostructured Melt-Spun β-Zn4Sb3
|
Qi, Dekui |
|
2010 |
39 |
8 |
p. 1159-1165 |
artikel |
20 |
Improvement of High-Temperature Performance of Zn-Sn Solder Joint
|
Takahashi, Toshihide |
|
2010 |
39 |
8 |
p. 1241-1247 |
artikel |
21 |
Influence of Cadmium Composition on CH4–H2-Based Inductively Coupled Plasma Etching of Hg1−xCdxTe
|
Boulard, F. |
|
2010 |
39 |
8 |
p. 1256-1261 |
artikel |
22 |
Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol–Gel Dip-Coating and Resistive Evaporation
|
Pineiz, Tatiane F. |
|
2010 |
39 |
8 |
p. 1170-1176 |
artikel |
23 |
Interfacial Reaction Between 95Pb-5Sn Solder Bump and 37Pb-63Sn Presolder in Flip-Chip Solder Joints
|
Chang, C. C. |
|
2010 |
39 |
8 |
p. 1289-1294 |
artikel |
24 |
Microstructural Analysis of Reballed Tin-Lead, Lead-Free, and Mixed Ball Grid Array Assemblies Under Temperature Cycling Test
|
Nie, Lei |
|
2010 |
39 |
8 |
p. 1218-1232 |
artikel |
25 |
Nonvolatile Metal–Oxide–Semiconductor Capacitors with Ru-RuOx Composite Nanodots Embedded in Atomic-Layer-Deposited Al2O3 Films
|
Gou, Hong-Yan |
|
2010 |
39 |
8 |
p. 1343-1350 |
artikel |
26 |
Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2
|
Dadsetani, M. |
|
2010 |
39 |
8 |
p. 1186-1193 |
artikel |
27 |
Reduced Temperature Coefficient of Capacitance (TCC) of Embedded Capacitor Films (ECFs) for Organic Substrates using SrTiO3 and Multifunctional Epoxy
|
Lee, Sangyong |
|
2010 |
39 |
8 |
p. 1358-1363 |
artikel |
28 |
Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC
|
Feng, Gan |
|
2010 |
39 |
8 |
p. 1166-1169 |
artikel |
29 |
Structural Properties of AlN Grown on Sapphire at Plasma Self-Heating Conditions Using Reactive Magnetron Sputter Deposition
|
Seo, Hui-Chan |
|
2010 |
39 |
8 |
p. 1146-1151 |
artikel |
30 |
The Mechanism of Residual Stress Relief for Various Tin Grain Structures
|
Yu, Cheng-Fu |
|
2010 |
39 |
8 |
p. 1315-1318 |
artikel |
31 |
Thermodynamic Description of the Te-Tl Binary System Using the Associate Solution Model
|
Gierlotka, Wojciech |
|
2010 |
39 |
8 |
p. 1319-1325 |
artikel |
32 |
Thermoelectric Properties of Layer-Antiferromagnet CuCrS2
|
Tewari, Girish C. |
|
2010 |
39 |
8 |
p. 1133-1139 |
artikel |
33 |
Ti-O Direct-Current-Sintered Bodies and Their Use for Sputter Deposition of TiO Thin Films: Fabrication and Characterization
|
Tomozawa, Masanari |
|
2010 |
39 |
8 |
p. 1364-1370 |
artikel |
34 |
Ti-Rich Barrier Layers Self-Formed on Porous Low-k Layers Using Cu(1 at.% Ti) Alloy Films
|
Ito, Kazuhiro |
|
2010 |
39 |
8 |
p. 1326-1333 |
artikel |
35 |
Weakening of the Cu/Cu3Sn(100) Interface by Bi Impurities
|
Pang, X. Y. |
|
2010 |
39 |
8 |
p. 1277-1282 |
artikel |