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                             44 results found
no title author magazine year volume issue page(s) type
1 Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling Hu, Weida
 2010
 39 7 p. 981-985
 article
2 Achieving Manufacturing Readiness for 6-Inch HgCdTe on Silicon Paden, L. A.
 2010
 39 7 p. 1007-1014
 article
3 Analysis of Current–Voltage Measurements on Long-Wavelength HgCdTe Photodiodes Fabricated on Si Composite Substrates Wijewarnasuriya, Priyalal
 2010
 39 7 p. 1110-1117
 article
4 Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes Itsuno, A. M.
 2010
 39 7 p. 945-950
 article
5 A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe Zhang, J.
 2010
 39 7 p. 1019-1022
 article
6 Atmospheric Effects on the Performance of CdZnTe Single-Crystal Detectors Washington, Aaron L.
 2010
 39 7 p. 1104-1109
 article
7 Characterization of Dislocations in (112)B HgCdTe/CdTe/Si Benson, J. D.
 2010
 39 7 p. 1080-1086
 article
8 Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates Rao, S. R.
 2010
 39 7 p. 996-1000
 article
9 Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing Brill, G.
 2010
 39 7 p. 967-973
 article
10 Effective Surface Passivation of CdMnTe Materials Kim, K.H.
 2010
 39 7 p. 1015-1018
 article
11 Effect of Hydrogen Free Radicals on Hg1−xCdxTe Wilks, J. A.
 2010
 39 7 p. 857-862
 article
12 Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas Stoltz, A. J.
 2010
 39 7 p. 958-966
 article
13 Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy Yasuda, K.
 2010
 39 7 p. 1118-1123
 article
14 Electronic and Optical Properties of MgxZn1−xO and BexZn1−xO Quantum Wells Furno, Enrico
 2010
 39 7 p. 936-944
 article
15 Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors Jaime-Vasquez, M.
 2010
 39 7 p. 951-957
 article
16 Feasibility of Localized Substrate Thinning for Reduced Dislocation Density in CdTe/Si Heterostructures Jacobs, R. N.
 2010
 39 7 p. 1036-1042
 article
17 Foreword Sivananthan, S.
 2010
 39 7 p. 831-836
 article
18 Full-Band Monte Carlo Simulation of HgCdTe APDs Bertazzi, Francesco
 2010
 39 7 p. 912-917
 article
19 Growth of HgTe Quantum Wells for IR to THz Detectors Dvoretsky, S.
 2010
 39 7 p. 918-923
 article
20 HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays Reddy, M.
 2010
 39 7 p. 974-980
 article
21 HgCdTe: Recent Trends in the Ultimate IR Semiconductor Kinch, Michael A.
 2010
 39 7 p. 1043-1052
 article
22 HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization Haakenaasen, R.
 2010
 39 7 p. 893-902
 article
23 Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection Yang, G.
 2010
 39 7 p. 1053-1057
 article
24 Investigation of Multicarrier Transport in LPE-Grown Hg1−xCdxTe Layers Umana-Membreno, G. A.
 2010
 39 7 p. 1023-1029
 article
25 Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211) Badano, Giacomo
 2010
 39 7 p. 908-911
 article
26 LWIR Strained-Layer Superlattice Materials and Devices at Teledyne Imaging Sensors Hood, Andrew D.
 2010
 39 7 p. 1001-1006
 article
27 MBE-Grown II–VI and Related Nanostructures Sou, I. K.
 2010
 39 7 p. 882-892
 article
28 MBE Growth and Transfer of HgCdTe Epitaxial Filmsfrom InSb Substrates Lyon, T. J. de
 2009
 39 7 p. 1058-1062
 article
29 Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates Kim, Kwang-Chon
 2010
 39 7 p. 863-867
 article
30 Microstructural Characterization of CdTe SurfacePassivation Layers Zhao, W.F.
 2010
 39 7 p. 924-929
 article
31 Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications Dreiske, P.
 2010
 39 7 p. 1087-1096
 article
32 Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response D’Souza, A. I.
 2010
 39 7 p. 986-991
 article
33 MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements Velicu, S.
 2010
 39 7 p. 873-881
 article
34 Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators Suarez, E.
 2010
 39 7 p. 903-907
 article
35 Numerical Simulation of ZnO-Based Terahertz Quantum Cascade Lasers Bellotti, Enrico
 2010
 39 7 p. 1097-1103
 article
36 Photoluminescence Studies of HgCdTe Epilayers Robin, I. C.
 2010
 39 7 p. 868-872
 article
37 Radiation Damage in Type II Superlattice Infrared Detectors Jackson, E.M.
 2010
 39 7 p. 852-856
 article
38 “Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance? Tennant, W. E.
 2010
 39 7 p. 1030-1035
 article
39 Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb Pimpinella, R. E.
 2010
 39 7 p. 992-995
 article
40 Shallow-Etch Mesa Isolation of Graded-Bandgap “W”-Structured Type II Superlattice Photodiodes Aifer, E. H.
 2010
 39 7 p. 1070-1079
 article
41 Shockley–Haynes Characterization of Minority-Carrier Drift Velocity, Diffusion Coefficient, and Lifetime in HgCdTe Avalanche Photodiodes Rothman, Johan
 2010
 39 7 p. 837-845
 article
42 Simulations of Dislocations in CdZnTe/SL/Si Substrates Ciani, Anthony J.
 2009
 39 7 p. 1063-1069
 article
43 Two-Dimensional Long-Wavelength and Very Long-Wavelength Focal-Plane Arrays at AIM Wenisch, J.
 2010
 39 7 p. 846-851
 article
44 Wafer Mapping Using Deuterium Enhanced Defect Characterization Hossain, K.
 2010
 39 7 p. 930-935
 article
                             44 results found
 
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