| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling
|
Hu, Weida
|
|
2010
|
39 |
7 |
p. 981-985
|
artikel
|
| 2 |
Achieving Manufacturing Readiness for 6-Inch HgCdTe on Silicon
|
Paden, L. A.
|
|
2010
|
39 |
7 |
p. 1007-1014
|
artikel
|
| 3 |
Analysis of Current–Voltage Measurements on Long-Wavelength HgCdTe Photodiodes Fabricated on Si Composite Substrates
|
Wijewarnasuriya, Priyalal
|
|
2010
|
39 |
7 |
p. 1110-1117
|
artikel
|
| 4 |
Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes
|
Itsuno, A. M.
|
|
2010
|
39 |
7 |
p. 945-950
|
artikel
|
| 5 |
A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe
|
Zhang, J.
|
|
2010
|
39 |
7 |
p. 1019-1022
|
artikel
|
| 6 |
Atmospheric Effects on the Performance of CdZnTe Single-Crystal Detectors
|
Washington, Aaron L.
|
|
2010
|
39 |
7 |
p. 1104-1109
|
artikel
|
| 7 |
Characterization of Dislocations in (112)B HgCdTe/CdTe/Si
|
Benson, J. D.
|
|
2010
|
39 |
7 |
p. 1080-1086
|
artikel
|
| 8 |
Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates
|
Rao, S. R.
|
|
2010
|
39 |
7 |
p. 996-1000
|
artikel
|
| 9 |
Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing
|
Brill, G.
|
|
2010
|
39 |
7 |
p. 967-973
|
artikel
|
| 10 |
Effective Surface Passivation of CdMnTe Materials
|
Kim, K.H.
|
|
2010
|
39 |
7 |
p. 1015-1018
|
artikel
|
| 11 |
Effect of Hydrogen Free Radicals on Hg1−xCdxTe
|
Wilks, J. A.
|
|
2010
|
39 |
7 |
p. 857-862
|
artikel
|
| 12 |
Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas
|
Stoltz, A. J.
|
|
2010
|
39 |
7 |
p. 958-966
|
artikel
|
| 13 |
Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy
|
Yasuda, K.
|
|
2010
|
39 |
7 |
p. 1118-1123
|
artikel
|
| 14 |
Electronic and Optical Properties of MgxZn1−xO and BexZn1−xO Quantum Wells
|
Furno, Enrico
|
|
2010
|
39 |
7 |
p. 936-944
|
artikel
|
| 15 |
Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors
|
Jaime-Vasquez, M.
|
|
2010
|
39 |
7 |
p. 951-957
|
artikel
|
| 16 |
Feasibility of Localized Substrate Thinning for Reduced Dislocation Density in CdTe/Si Heterostructures
|
Jacobs, R. N.
|
|
2010
|
39 |
7 |
p. 1036-1042
|
artikel
|
| 17 |
Foreword
|
Sivananthan, S.
|
|
2010
|
39 |
7 |
p. 831-836
|
artikel
|
| 18 |
Full-Band Monte Carlo Simulation of HgCdTe APDs
|
Bertazzi, Francesco
|
|
2010
|
39 |
7 |
p. 912-917
|
artikel
|
| 19 |
Growth of HgTe Quantum Wells for IR to THz Detectors
|
Dvoretsky, S.
|
|
2010
|
39 |
7 |
p. 918-923
|
artikel
|
| 20 |
HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays
|
Reddy, M.
|
|
2010
|
39 |
7 |
p. 974-980
|
artikel
|
| 21 |
HgCdTe: Recent Trends in the Ultimate IR Semiconductor
|
Kinch, Michael A.
|
|
2010
|
39 |
7 |
p. 1043-1052
|
artikel
|
| 22 |
HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization
|
Haakenaasen, R.
|
|
2010
|
39 |
7 |
p. 893-902
|
artikel
|
| 23 |
Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection
|
Yang, G.
|
|
2010
|
39 |
7 |
p. 1053-1057
|
artikel
|
| 24 |
Investigation of Multicarrier Transport in LPE-Grown Hg1−xCdxTe Layers
|
Umana-Membreno, G. A.
|
|
2010
|
39 |
7 |
p. 1023-1029
|
artikel
|
| 25 |
Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211)
|
Badano, Giacomo
|
|
2010
|
39 |
7 |
p. 908-911
|
artikel
|
| 26 |
LWIR Strained-Layer Superlattice Materials and Devices at Teledyne Imaging Sensors
|
Hood, Andrew D.
|
|
2010
|
39 |
7 |
p. 1001-1006
|
artikel
|
| 27 |
MBE-Grown II–VI and Related Nanostructures
|
Sou, I. K.
|
|
2010
|
39 |
7 |
p. 882-892
|
artikel
|
| 28 |
MBE Growth and Transfer of HgCdTe Epitaxial Filmsfrom InSb Substrates
|
Lyon, T. J. de
|
|
2009
|
39 |
7 |
p. 1058-1062
|
artikel
|
| 29 |
Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates
|
Kim, Kwang-Chon
|
|
2010
|
39 |
7 |
p. 863-867
|
artikel
|
| 30 |
Microstructural Characterization of CdTe SurfacePassivation Layers
|
Zhao, W.F.
|
|
2010
|
39 |
7 |
p. 924-929
|
artikel
|
| 31 |
Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications
|
Dreiske, P.
|
|
2010
|
39 |
7 |
p. 1087-1096
|
artikel
|
| 32 |
Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response
|
D’Souza, A. I.
|
|
2010
|
39 |
7 |
p. 986-991
|
artikel
|
| 33 |
MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements
|
Velicu, S.
|
|
2010
|
39 |
7 |
p. 873-881
|
artikel
|
| 34 |
Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators
|
Suarez, E.
|
|
2010
|
39 |
7 |
p. 903-907
|
artikel
|
| 35 |
Numerical Simulation of ZnO-Based Terahertz Quantum Cascade Lasers
|
Bellotti, Enrico
|
|
2010
|
39 |
7 |
p. 1097-1103
|
artikel
|
| 36 |
Photoluminescence Studies of HgCdTe Epilayers
|
Robin, I. C.
|
|
2010
|
39 |
7 |
p. 868-872
|
artikel
|
| 37 |
Radiation Damage in Type II Superlattice Infrared Detectors
|
Jackson, E.M.
|
|
2010
|
39 |
7 |
p. 852-856
|
artikel
|
| 38 |
“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?
|
Tennant, W. E.
|
|
2010
|
39 |
7 |
p. 1030-1035
|
artikel
|
| 39 |
Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb
|
Pimpinella, R. E.
|
|
2010
|
39 |
7 |
p. 992-995
|
artikel
|
| 40 |
Shallow-Etch Mesa Isolation of Graded-Bandgap “W”-Structured Type II Superlattice Photodiodes
|
Aifer, E. H.
|
|
2010
|
39 |
7 |
p. 1070-1079
|
artikel
|
| 41 |
Shockley–Haynes Characterization of Minority-Carrier Drift Velocity, Diffusion Coefficient, and Lifetime in HgCdTe Avalanche Photodiodes
|
Rothman, Johan
|
|
2010
|
39 |
7 |
p. 837-845
|
artikel
|
| 42 |
Simulations of Dislocations in CdZnTe/SL/Si Substrates
|
Ciani, Anthony J.
|
|
2009
|
39 |
7 |
p. 1063-1069
|
artikel
|
| 43 |
Two-Dimensional Long-Wavelength and Very Long-Wavelength Focal-Plane Arrays at AIM
|
Wenisch, J.
|
|
2010
|
39 |
7 |
p. 846-851
|
artikel
|
| 44 |
Wafer Mapping Using Deuterium Enhanced Defect Characterization
|
Hossain, K.
|
|
2010
|
39 |
7 |
p. 930-935
|
artikel
|
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