| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film
|
Bi, Zhen
|
|
2008
|
38 |
4 |
p. 609-612
|
artikel
|
| 2 |
Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method
|
Huang, Li-Hsien
|
|
2008
|
38 |
4 |
p. 529-532
|
artikel
|
| 3 |
Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method
|
Huang, Li-Hsien
|
|
|
38 |
4 |
p. 529-532
|
artikel
|
| 4 |
Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)]
|
Tilak, V.
|
|
2009
|
38 |
4 |
p. 618-620
|
artikel
|
| 5 |
Current-Induced Degradation of Nickel Ohmic Contacts to SiC
|
Downey, B.P.
|
|
2009
|
38 |
4 |
p. 563-568
|
artikel
|
| 6 |
Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
|
Bolen, M. L.
|
|
2009
|
38 |
4 |
p. 574-580
|
artikel
|
| 7 |
Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires
|
Armstrong, A.
|
|
2008
|
38 |
4 |
p. 484-489
|
artikel
|
| 8 |
Effects of TiN Buffer Layer Thickness on GaN Growth
|
Ito, Kazuhiro
|
|
2008
|
38 |
4 |
p. 511-517
|
artikel
|
| 9 |
Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF3 Annealing
|
Orita, Kenji
|
|
2009
|
38 |
4 |
p. 538-544
|
artikel
|
| 10 |
Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing
|
Maximenko, S.I.
|
|
2008
|
38 |
4 |
p. 551-556
|
artikel
|
| 11 |
Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)
|
Kim, Tae-Hong
|
|
2009
|
38 |
4 |
p. 505-510
|
artikel
|
| 12 |
Foreword
|
Stahlbush, Robert
|
|
2009
|
38 |
4 |
p. 483
|
artikel
|
| 13 |
GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces
|
Tang, K.
|
|
2009
|
38 |
4 |
p. 523-528
|
artikel
|
| 14 |
GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements
|
Mansfield, L. M.
|
|
2009
|
38 |
4 |
p. 495-504
|
artikel
|
| 15 |
Growth and Characterization of GaN Nanowires for Hydrogen Sensors
|
Johnson, Jason L.
|
|
2008
|
38 |
4 |
p. 490-494
|
artikel
|
| 16 |
Growth-Temperature-Controlled Optical Properties of Textured MgxZn1−xO Thin Films
|
Wei, W.
|
|
2008
|
38 |
4 |
p. 613-617
|
artikel
|
| 17 |
Heteroepitaxial 3C-SiC on Si with Various Carbonization Process Conditions
|
Kim, Byeung C.
|
|
2009
|
38 |
4 |
p. 581-585
|
artikel
|
| 18 |
Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN
|
Chary, I.
|
|
2009
|
38 |
4 |
p. 545-550
|
artikel
|
| 19 |
Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis
|
Goris, L.
|
|
2008
|
38 |
4 |
p. 586-595
|
artikel
|
| 20 |
Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors
|
Virshup, Ariel
|
|
2009
|
38 |
4 |
p. 569-573
|
artikel
|
| 21 |
Microstructural Investigation of Bilayer Growth of In- and Ga-Rich InGaN Grown by Chemical Vapor Deposition
|
Park, Jiwon
|
|
2008
|
38 |
4 |
p. 518-522
|
artikel
|
| 22 |
Pre-avalanche Ultraviolet Photoconduction Properties of Transitional-Metal-Doped ZnO Nanowires
|
Kouklin, N.
|
|
2009
|
38 |
4 |
p. 596-600
|
artikel
|
| 23 |
Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater., vol. 37, no. 5, pp. 646–654 (2008)]
|
Agarwal, A.
|
|
2009
|
38 |
4 |
p. 621-622
|
artikel
|
| 24 |
Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes
|
Miller, M.A.
|
|
2009
|
38 |
4 |
p. 533-537
|
artikel
|
| 25 |
Surface Wettability of Nanostructured Zinc Oxide Films
|
Han, Jie
|
|
2008
|
38 |
4 |
p. 601-608
|
artikel
|
| 26 |
X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration
|
Chandolu, A.
|
|
2009
|
38 |
4 |
p. 557-562
|
artikel
|
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