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Journal description
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Details for article 10 of 26 found articles
| Title: |
Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing |
| Author: |
Maximenko, S.I. Freitas, J.A. Garces, N.Y. Glaser, E.R. Fanton, M.A. |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 38 (2008) nr. 4 pages 551-556 |
| Year: |
2008 |
| Contents: | |
| Publisher: |
Springer US, Boston |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 26 found articles
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