| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Al- and Al:In-Doped ZnO Thin Films Deposited by RF Magnetron Sputtering for Spacecraft Charge Mitigation
|
Lennon, C.
|
|
2008
|
37 |
9 |
p. 1324-1328
|
artikel
|
| 2 |
An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas
|
Lyon, T.J. de
|
|
2008
|
37 |
9 |
p. 1420-1425
|
artikel
|
| 3 |
Anisotropic Surface Roughness in Molecular-Beam Epitaxy CdTe (211)B/Ge(211)
|
Badano, Giacomo
|
|
2008
|
37 |
9 |
p. 1369-1375
|
artikel
|
| 4 |
As Doping in (Hg,Cd)Te: An Alternative Point of View
|
Hails, Janet E.
|
|
2008
|
37 |
9 |
p. 1291-1302
|
artikel
|
| 5 |
A Theoretical Model for the HgCdTe Electron Avalanche Photodiode
|
Kinch, Michael A.
|
|
2008
|
37 |
9 |
p. 1453-1459
|
artikel
|
| 6 |
Avalanche Mechanism in p+-n−-n+ and p+-n Mid-Wavelength Infrared Hg1−xCdxTe Diodes on Si Substrates
|
Mallick, Shubhrangshu
|
|
2008
|
37 |
9 |
p. 1488-1496
|
artikel
|
| 7 |
Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes
|
Reine, M.B.
|
|
2008
|
37 |
9 |
p. 1376-1386
|
artikel
|
| 8 |
Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy
|
Wang, X.J.
|
|
2008
|
37 |
9 |
p. 1200-1204
|
artikel
|
| 9 |
Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy
|
Selvig, E.
|
|
2008
|
37 |
9 |
p. 1444-1452
|
artikel
|
| 10 |
Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT
|
Elizondo, S.L.
|
|
2008
|
37 |
9 |
p. 1411-1414
|
artikel
|
| 11 |
Effect of Atmosphere on n-Type Hg1–xCdxTe Surface after Different Wet Etching Treatments: An Electrical and Structural Study
|
Kiran, R.
|
|
2008
|
37 |
9 |
p. 1471-1479
|
artikel
|
| 12 |
Effects of Surface Processing on the Response of CZT Gamma Detectors: Studies with a Collimated Synchrotron X-Ray Beam
|
Hossain, A.
|
|
2008
|
37 |
9 |
p. 1356-1361
|
artikel
|
| 13 |
Electromagnetic Modeling of n-on-p HgCdTe Back-Illuminated Infrared Photodiode Response
|
Gravrand, O.
|
|
2008
|
37 |
9 |
p. 1205-1211
|
artikel
|
| 14 |
Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities
|
Zogg, H.
|
|
2008
|
37 |
9 |
p. 1497-1503
|
artikel
|
| 15 |
Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors
|
Yokota, M.
|
|
2008
|
37 |
9 |
p. 1391-1395
|
artikel
|
| 16 |
Foreword
|
Sivananthan, S.
|
|
2008
|
37 |
9 |
p. 1165
|
artikel
|
| 17 |
Gated IR Imaging with 128 × 128 HgCdTe Electron Avalanche Photodiode FPA
|
Beck, Jeff
|
|
2008
|
37 |
9 |
p. 1334-1343
|
artikel
|
| 18 |
High-Operating-Temperature MWIR Detector Diodes
|
Schaake, H.F.
|
|
2008
|
37 |
9 |
p. 1401-1405
|
artikel
|
| 19 |
Impulse Response Time Measurements in Hg0.7Cd0.3Te MWIR Avalanche Photodiodes
|
Perrais, Gwladys
|
|
2008
|
37 |
9 |
p. 1261-1273
|
artikel
|
| 20 |
Junction Stability in Ion-Implanted Mercury Cadmium Telluride
|
Chandra, D.
|
|
2008
|
37 |
9 |
p. 1329-1333
|
artikel
|
| 21 |
Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec
|
Rothman, Johan
|
|
2008
|
37 |
9 |
p. 1303-1310
|
artikel
|
| 22 |
Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy
|
Hawkins, Samantha A.
|
|
2008
|
37 |
9 |
p. 1438-1443
|
artikel
|
| 23 |
LWIR HgCdTe Detectors Grown on Ge Substrates
|
Vilela, M.F.
|
|
2008
|
37 |
9 |
p. 1465-1470
|
artikel
|
| 24 |
MBE-Grown Cubic ZnS Nanowires
|
Chan, S.K.
|
|
2008
|
37 |
9 |
p. 1433-1437
|
artikel
|
| 25 |
MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection
|
Reddy, M.
|
|
2008
|
37 |
9 |
p. 1274-1282
|
artikel
|
| 26 |
MBE HgCdTe on Alternative Substrates for FPA Applications
|
He, Li
|
|
2008
|
37 |
9 |
p. 1189-1199
|
artikel
|
| 27 |
MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic
|
Tennant, W.E.
|
|
2008
|
37 |
9 |
p. 1406-1410
|
artikel
|
| 28 |
Modeling of Copper SIMS Profiles in Thin HgCdTe
|
Schaake, H.F.
|
|
2008
|
37 |
9 |
p. 1387-1390
|
artikel
|
| 29 |
Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation
|
Emelie, P.Y.
|
|
2008
|
37 |
9 |
p. 1362-1368
|
artikel
|
| 30 |
Modeling of Recombination in HgCdTe
|
Grein, C.H.
|
|
2008
|
37 |
9 |
p. 1415-1419
|
artikel
|
| 31 |
Modeling of the Structural Properties of Hg1–xCdxTe
|
Benson, J.D.
|
|
2008
|
37 |
9 |
p. 1166-1170
|
artikel
|
| 32 |
Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces
|
Stoltz, A.J.
|
|
2008
|
37 |
9 |
p. 1225-1230
|
artikel
|
| 33 |
Nanotrenches Induced by Catalyst Particles on ZnSe Surfaces
|
Chan, S.K.
|
|
2008
|
37 |
9 |
p. 1344-1348
|
artikel
|
| 34 |
Nanowires in the CdHgTe Material System
|
Haakenaasen, R.
|
|
2008
|
37 |
9 |
p. 1311-1317
|
artikel
|
| 35 |
Noise Attributes of LWIR HDVIP HgCdTe Detectors
|
D’Souza, A.I.
|
|
2008
|
37 |
9 |
p. 1318-1323
|
artikel
|
| 36 |
Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes
|
Wijewarnasuriya, Priyalal S.
|
|
2008
|
37 |
9 |
p. 1283-1290
|
artikel
|
| 37 |
Numerical Analysis of a Very Long-Wavelength HgCdTe Pixel Array for Infrared Detection
|
D’Orsogna, Danilo
|
|
2008
|
37 |
9 |
p. 1349-1355
|
artikel
|
| 38 |
Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors
|
Jaime-Vasquez, M.
|
|
2008
|
37 |
9 |
p. 1247-1254
|
artikel
|
| 39 |
Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing
|
Belas, E.
|
|
2008
|
37 |
9 |
p. 1212-1218
|
artikel
|
| 40 |
Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy
|
Jacobs, R.N.
|
|
2008
|
37 |
9 |
p. 1480-1487
|
artikel
|
| 41 |
Status of LWIR HgCdTe-on-Silicon FPA Technology
|
Carmody, M.
|
|
2008
|
37 |
9 |
p. 1184-1188
|
artikel
|
| 42 |
Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates
|
Bommena, R.
|
|
2008
|
37 |
9 |
p. 1255-1260
|
artikel
|
| 43 |
Structural Analysis of CdTe Hetero-epitaxy on (211) Si
|
Benson, J.D.
|
|
2008
|
37 |
9 |
p. 1231-1236
|
artikel
|
| 44 |
Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy
|
Piquette, E.C.
|
|
2008
|
37 |
9 |
p. 1396-1400
|
artikel
|
| 45 |
Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy
|
Chang, Yong
|
|
2008
|
37 |
9 |
p. 1171-1183
|
artikel
|
| 46 |
Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices
|
Velicu, S.
|
|
2008
|
37 |
9 |
p. 1509
|
artikel
|
| 47 |
Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices
|
Velicu, S.
|
|
2008
|
37 |
9 |
p. 1504-1508
|
artikel
|
| 48 |
Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In
|
Elhadidy, Hassan
|
|
2008
|
37 |
9 |
p. 1219-1224
|
artikel
|
| 49 |
Traces of HgCdTe Defects as Revealed by Etch Pits
|
Yang, J.R.
|
|
2008
|
37 |
9 |
p. 1241-1246
|
artikel
|
| 50 |
Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds
|
Mullins, J.T.
|
|
2008
|
37 |
9 |
p. 1460-1464
|
artikel
|
| 51 |
ZnO and Related Materials for Sensors and Light-Emitting Diodes
|
Pearton, S.J.
|
|
2008
|
37 |
9 |
p. 1426-1432
|
artikel
|
| 52 |
ZnO TFT Devices Built on Glass Substrates
|
Zhu, J.
|
|
2008
|
37 |
9 |
p. 1237-1240
|
artikel
|
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