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An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas |
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Titel: |
An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas |
Auteur: |
Lyon, T.J. de Rajavel, R.D. Hunter, A.T. Jensen, J.E. Jack, M.D. Bailey, S.L. Kvaas, R.E. Randall, V.K. Johnson, S.M. |
Verschenen in: |
Journal of electronic materials |
Paginering: |
Jaargang 37 (2008) nr. 9 pagina's 1420-1425 |
Jaar: |
2008 |
Inhoud: |
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Uitgever: |
Springer US, Boston |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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