| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Annealing and Measurement Temperature Dependence of W2B- and W2B5-Based Rectifying Contacts to p-GaN
|
Voss, L.F.
|
|
2007
|
36 |
4 |
p. 384-390
|
artikel
|
| 2 |
Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System
|
Chen, J.-J.
|
|
2006
|
36 |
4 |
p. 368-372
|
artikel
|
| 3 |
Bias-Dependent Ultraviolet Photodetection by Au-Mg0.1Zn0.9O/ZnO-Ag Structure
|
Mridha, S.
|
|
2007
|
36 |
4 |
p. 524-528
|
artikel
|
| 4 |
Changes in Electrical Characteristics of ZnO Thin Films Due to Environmental Factors
|
Claflin, B.
|
|
2007
|
36 |
4 |
p. 442-445
|
artikel
|
| 5 |
Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide
|
Mohammad, F. A.
|
|
2007
|
36 |
4 |
p. 312-317
|
artikel
|
| 6 |
Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization
|
Dhanaraj, Govindhan
|
|
2007
|
36 |
4 |
p. 332-339
|
artikel
|
| 7 |
Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes
|
Limb, J. B.
|
|
2007
|
36 |
4 |
p. 426-430
|
artikel
|
| 8 |
Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC
|
SUNDARESAN, SIDDARTH G.
|
|
2007
|
36 |
4 |
p. 324-331
|
artikel
|
| 9 |
Compositional Study of Copper-Germanium Ohmic Contact to n-GaN
|
Schuette, Michael L.
|
|
2007
|
36 |
4 |
p. 420-425
|
artikel
|
| 10 |
Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO
|
Wright, J.S.
|
|
2007
|
36 |
4 |
p. 488-493
|
artikel
|
| 11 |
Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes
|
Allums, K.K.
|
|
2007
|
36 |
4 |
p. 519-523
|
artikel
|
| 12 |
Effect of Si Co Doping on Ferromagnetic Properties of GaGdN
|
Hite, J.K.
|
|
2006
|
36 |
4 |
p. 391-396
|
artikel
|
| 13 |
Effect of Temperature on Structural and Morphologic Properties of ZnO Films Annealed in Ammonia Ambient
|
Xue, Shoubin
|
|
2007
|
36 |
4 |
p. 502-506
|
artikel
|
| 14 |
Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC
|
Fang, Z.-Q.
|
|
2007
|
36 |
4 |
p. 307-311
|
artikel
|
| 15 |
Effects of Illumination on Ar+-Implanted n-Type 6H-SiC Epitaxial Layers
|
Evwaraye, A.O.
|
|
2007
|
36 |
4 |
p. 340-345
|
artikel
|
| 16 |
Epitaxial Growth and Characterization of p-Type ZnO
|
Pan, M.
|
|
2007
|
36 |
4 |
p. 457-461
|
artikel
|
| 17 |
Epitaxial Growth and Device Design Optimization of Full-Vertical GaN p-i-n Rectifiers
|
Yoo, Dongwon
|
|
2007
|
36 |
4 |
p. 353-358
|
artikel
|
| 18 |
Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition
|
Weng, X.
|
|
2007
|
36 |
4 |
p. 346-352
|
artikel
|
| 19 |
Fabrication of p-Type ZnO Thin Films via DC Reactive Magnetron Sputtering by Using Na as the Dopant Source
|
Yang, L. L.
|
|
2007
|
36 |
4 |
p. 498-501
|
artikel
|
| 20 |
Ferromagnetism in Transition-Metal Doped ZnO
|
Pearton, S.J.
|
|
|
36 |
4 |
p. 462-471
|
artikel
|
| 21 |
Ferromagnetism in Transition-Metal Doped ZnO
|
Pearton, S.J.
|
|
2006
|
36 |
4 |
p. 462-471
|
artikel
|
| 22 |
Foreword
|
Stahlbush, Robert
|
|
2007
|
36 |
4 |
p. 267
|
artikel
|
| 23 |
Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy
|
Qiu, Kai
|
|
2007
|
36 |
4 |
p. 436-441
|
artikel
|
| 24 |
Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure
|
Dimakis, E.
|
|
2007
|
36 |
4 |
p. 373-378
|
artikel
|
| 25 |
Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties
|
Alivov, Y.I.
|
|
2007
|
36 |
4 |
p. 409-413
|
artikel
|
| 26 |
Identification of a Three-Site Defect in Semi-Insulating 4H-SiC
|
Garces, N. Y.
|
|
2007
|
36 |
4 |
p. 268-271
|
artikel
|
| 27 |
Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors
|
Khanna, Rohit
|
|
2007
|
36 |
4 |
p. 379-383
|
artikel
|
| 28 |
Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination
|
Green, R. T.
|
|
2007
|
36 |
4 |
p. 397-402
|
artikel
|
| 29 |
Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films
|
Kennedy, J.
|
|
2007
|
36 |
4 |
p. 472-482
|
artikel
|
| 30 |
Magnetic Properties of Fe-Implanted ZnO Nanotips Grown by Metal-Organic Chemical Vapor Deposition
|
Wu, P.
|
|
2007
|
36 |
4 |
p. 529-532
|
artikel
|
| 31 |
Maskless Lateral Epitaxial Growth of Gallium Nitride Using Dimethylhydrazine as a Nitrogen Precursor
|
Takizawa, Toshiyuki
|
|
2007
|
36 |
4 |
p. 403-408
|
artikel
|
| 32 |
Nanopatterned Contacts to GaN
|
Kim, Ho Gyoung
|
|
2007
|
36 |
4 |
p. 359-367
|
artikel
|
| 33 |
Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation
|
Avrutin, V.
|
|
2007
|
36 |
4 |
p. 483-487
|
artikel
|
| 34 |
Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy
|
Xi, Y.A.
|
|
2007
|
36 |
4 |
p. 533-537
|
artikel
|
| 35 |
Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy
|
Liu, Kendrick X.
|
|
2007
|
36 |
4 |
p. 297-306
|
artikel
|
| 36 |
Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [$$ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} $$]- and [0001]-Oriented Silicon Carbide Substrates
|
Bishop, S.M.
|
|
2007
|
36 |
4 |
p. 285-296
|
artikel
|
| 37 |
Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC
|
Gao, M.
|
|
2007
|
36 |
4 |
p. 277-284
|
artikel
|
| 38 |
Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane MgxZn1–xO (0 ≤ x ≤ 0.3) Films
|
Saraf, Gaurav
|
|
2007
|
36 |
4 |
p. 446-451
|
artikel
|
| 39 |
The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes
|
Lee, Kung-Yen
|
|
2007
|
36 |
4 |
p. 272-276
|
artikel
|
| 40 |
The Effect of Substrate Material and Postannealing on the Photoluminescence and Piezo Properties of DC-Sputtered ZnO
|
Schuler, Leo P.
|
|
2007
|
36 |
4 |
p. 507-518
|
artikel
|
| 41 |
Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes
|
Caldwell, Joshua D.
|
|
2007
|
36 |
4 |
p. 318-323
|
artikel
|
| 42 |
The Use of Cathodoluminescence during Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate Temperature
|
Lee, K.
|
|
2007
|
36 |
4 |
p. 431-435
|
artikel
|
| 43 |
Tri-Buffer Process: A New Approach to Obtain High-Quality ZnO Epitaxial Films on Sapphire Substrates
|
Mei, Z. X.
|
|
2007
|
36 |
4 |
p. 452-456
|
artikel
|
| 44 |
X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution
|
Dalmau, R.
|
|
2007
|
36 |
4 |
p. 414-419
|
artikel
|
| 45 |
Zinc Oxide Nanorods Grown by Arc Discharge
|
Zhu, G.P.
|
|
2007
|
36 |
4 |
p. 494-497
|
artikel
|
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