| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy
|
Swartz, C. H.
|
|
2006
|
35 |
6 |
p. 1360-1368
|
artikel
|
| 2 |
A comparison of gamma radiation effects on bromine- and hydrazine-treated HgCdTe photodiodes
|
Lee, Min Yung
|
|
2006
|
35 |
6 |
p. 1429-1433
|
artikel
|
| 3 |
Anisotropy in selective metalorganic vapor phase epitaxy of CdTe on GaAs and Si substrates
|
Bhat, Ishwara
|
|
2006
|
35 |
6 |
p. 1293-1298
|
artikel
|
| 4 |
CdZnTe graded buffer layers for HgCdTe/Si integration
|
Groenert, M. E.
|
|
2006
|
35 |
6 |
p. 1287-1292
|
artikel
|
| 5 |
Characterization of Cd1−xZnxTe crystals grown from a modified vertical bridgman technique
|
Cui, Y.
|
|
2006
|
35 |
6 |
p. 1267-1274
|
artikel
|
| 6 |
Characterization of physical-chemical drivers of Hg1−xGdxTe etch rate using time of flight—Secondary ion mass spectrometry and optical interferometry
|
Olshove, R.
|
|
2006
|
35 |
6 |
p. 1185-1191
|
artikel
|
| 7 |
Chemical polishing of CdZnTe substrates fabricated from crystals grown by the vertical-gradient freezing method
|
Moravec, P.
|
|
2006
|
35 |
6 |
p. 1206-1213
|
artikel
|
| 8 |
Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays
|
Maxey, C. D.
|
|
2006
|
35 |
6 |
p. 1275-1282
|
artikel
|
| 9 |
Detectivity studies of SMD-packaged ZnSSe and ZnMgS UV detectors
|
Mak, L. S.
|
|
2006
|
35 |
6 |
p. 1322-1326
|
artikel
|
| 10 |
Determination of HgCdTe elasto-plastic properties using nanoindentation
|
Martyniuk, M.
|
|
2006
|
35 |
6 |
p. 1197-1205
|
artikel
|
| 11 |
Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging
|
Niraula, M.
|
|
2006
|
35 |
6 |
p. 1257-1261
|
artikel
|
| 12 |
Effect of annealing on the morphology and optoelectrical characteristics of ZnO thin films grown by plasma-assisted molecular beam epitaxy
|
Lee, W. C. T.
|
|
2006
|
35 |
6 |
p. 1316-1321
|
artikel
|
| 13 |
Effects of a-Si:H resist vacuum-lithography processing on HgCdTe
|
Jacobs, R. N.
|
|
2006
|
35 |
6 |
p. 1474-1480
|
artikel
|
| 14 |
Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si
|
Boieriu, P.
|
|
2006
|
35 |
6 |
p. 1385-1390
|
artikel
|
| 15 |
Elastic strains in heteroepitaxial ZnSe1−xTex on InGaAs/InP (001)
|
Yarlagadda, B.
|
|
2006
|
35 |
6 |
p. 1327-1332
|
artikel
|
| 16 |
Epitaxial growth of CdTe on Si through perovskite oxide buffers
|
Campo, Eva M.
|
|
2006
|
35 |
6 |
p. 1219-1223
|
artikel
|
| 17 |
Examination of the effects of high-density plasmas on the surface of HgCdTe
|
Stoltz, A. J.
|
|
2006
|
35 |
6 |
p. 1461-1464
|
artikel
|
| 18 |
Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors
|
Smith, E. P. G.
|
|
2006
|
35 |
6 |
p. 1145-1152
|
artikel
|
| 19 |
Foreword
|
Sivananthan, S.
|
|
2006
|
35 |
6 |
p. 1139
|
artikel
|
| 20 |
Full-wafer spatial mapping of macrodefects on HgCdTe epitaxial wafers grown by MBE
|
Roth, John A.
|
|
2006
|
35 |
6 |
p. 1503-1508
|
artikel
|
| 21 |
HgCdTe detectors operating above 200 K
|
Gordon, N. T.
|
|
2006
|
35 |
6 |
p. 1140-1144
|
artikel
|
| 22 |
HgCdTe negative luminescence devices for cold shielding and other applications
|
Lindle, J. R.
|
|
2006
|
35 |
6 |
p. 1391-1398
|
artikel
|
| 23 |
High-quality large-area MBE HgCdTe/Si
|
Peterson, J. M.
|
|
2006
|
35 |
6 |
p. 1283-1286
|
artikel
|
| 24 |
Hybrid deposition of piezoelectric $$(11\bar 20)$$ MgxZn1−xO (0≤x≤0.3) on $$(01\bar 12)$$ R-sapphire substrates using RF sputtering and MOCVDR-sapphire substrates using RF sputtering and MOCVD
|
Saraf, Gaurav
|
|
2006
|
35 |
6 |
p. 1306-1310
|
artikel
|
| 25 |
Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma
|
Golding, T. D.
|
|
2006
|
35 |
6 |
p. 1465-1469
|
artikel
|
| 26 |
Influence of Substrate Orientation on the Growth of HgCdTe by Molecular Beam Epitaxy
|
Almeida, L. A.
|
|
2006
|
35 |
6 |
p. 1214-1218
|
artikel
|
| 27 |
In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers
|
Jaime-Vasquez, M.
|
|
2006
|
35 |
6 |
p. 1455-1460
|
artikel
|
| 28 |
Interface properties of ZnO nanotips grown on Si substrates
|
Chen, H.
|
|
2006
|
35 |
6 |
p. 1241-1245
|
artikel
|
| 29 |
Internal drift effects on the diffusion of Ag in CdTe
|
Wolf, H.
|
|
2006
|
35 |
6 |
p. 1350-1353
|
artikel
|
| 30 |
Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy
|
Wang, Changzhen
|
|
2006
|
35 |
6 |
p. 1192-1196
|
artikel
|
| 31 |
Investigation of HgCdTe surface films and their removal
|
Varesi, J. B.
|
|
2006
|
35 |
6 |
p. 1443-1448
|
artikel
|
| 32 |
Investigation of HgTe-HgCdTe superlattices by high-resolution X-ray diffraction
|
Hatch, S. D.
|
|
2006
|
35 |
6 |
p. 1481-1486
|
artikel
|
| 33 |
LWIR HgCdTe on Si detector performance and analysis
|
Carmody, M.
|
|
2006
|
35 |
6 |
p. 1417-1422
|
artikel
|
| 34 |
Mapping of zinc content in Cd1−xZnxTe by optical methods
|
Horodyský, P.
|
|
2006
|
35 |
6 |
p. 1491-1494
|
artikel
|
| 35 |
Material quality characterization of CdZnTe substrates for HgCdTe epitaxy
|
Carini, G. A.
|
|
2006
|
35 |
6 |
p. 1495-1502
|
artikel
|
| 36 |
Maximum entropy mobility spectrum analysis of HgCdTe heterostructures
|
Rothman, Johan
|
|
2006
|
35 |
6 |
p. 1174-1184
|
artikel
|
| 37 |
Minority carrier lifetimes in HgCdTe alloys
|
Krishnamurthy, S.
|
|
2006
|
35 |
6 |
p. 1369-1378
|
artikel
|
| 38 |
Modeling of optical response in graded absorber layer detectors
|
Lee, Donald L.
|
|
2006
|
35 |
6 |
p. 1423-1428
|
artikel
|
| 39 |
Molecular beam epitaxy—Grown ZnSe nanowires
|
Chan, S. K.
|
|
2006
|
35 |
6 |
p. 1246-1250
|
artikel
|
| 40 |
Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors
|
Zanatta, J. P.
|
|
2006
|
35 |
6 |
p. 1231-1236
|
artikel
|
| 41 |
Oxygen-doped ZnTe phosphors for synchrotron X-ray imaging detectors
|
Kang, Z. T.
|
|
2006
|
35 |
6 |
p. 1262-1266
|
artikel
|
| 42 |
Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers
|
Kiran, Rajni
|
|
2006
|
35 |
6 |
p. 1379-1384
|
artikel
|
| 43 |
Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion
|
Piquette, E. C.
|
|
2006
|
35 |
6 |
p. 1346-1349
|
artikel
|
| 44 |
Progress in ZnO materials and devices
|
Look, David C.
|
|
2006
|
35 |
6 |
p. 1299-1305
|
artikel
|
| 45 |
p to n conversion in SWIR mercury cadmium telluride with ion milling
|
Chandra, D.
|
|
2006
|
35 |
6 |
p. 1470-1473
|
artikel
|
| 46 |
p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors
|
Jung, H. S.
|
|
2006
|
35 |
6 |
p. 1341-1345
|
artikel
|
| 47 |
SiCl4-based reactive ion etching of ZnO and MgxZn1−xO films on r-sapphire substrates
|
Zhu, J.
|
|
2006
|
35 |
6 |
p. 1311-1315
|
artikel
|
| 48 |
Simulation, modeling, and crystal growth of Cd0.9Zn0.1Te for nuclear spectrometers
|
Mandal, Krishna C.
|
|
2006
|
35 |
6 |
p. 1251-1256
|
artikel
|
| 49 |
Spin-coated ZnO thin films using ZnO nano-colloid
|
Sharma, Swati
|
|
2006
|
35 |
6 |
p. 1237-1240
|
artikel
|
| 50 |
Study of defect levels in CdTe using thermoelectric effect spectroscopy
|
Soundararajan, Raji
|
|
2006
|
35 |
6 |
p. 1333-1340
|
artikel
|
| 51 |
Study of the spatial response of reduced pitch Hg1−xCdxTe dual-band detector arrays
|
Gravrand, O.
|
|
2006
|
35 |
6 |
p. 1159-1165
|
artikel
|
| 52 |
Surface structure of (111)A HgCdTe
|
Benson, J. D.
|
|
2006
|
35 |
6 |
p. 1434-1442
|
artikel
|
| 53 |
The HgCdTe electron avalanche photodiode
|
Beck, J.
|
|
2006
|
35 |
6 |
p. 1166-1173
|
artikel
|
| 54 |
The nature of point defects in CdTe
|
Fochuk, P.
|
|
2006
|
35 |
6 |
p. 1354-1359
|
artikel
|
| 55 |
Thermal cycling-induced changes in excess dark current in very long-wavelength HgCdTe photodiodes at low temperature
|
Tobin, Stephen P.
|
|
2006
|
35 |
6 |
p. 1411-1416
|
artikel
|
| 56 |
The role of lattice mismatch in the deposition of CdTe thin films
|
Neretina, S.
|
|
2006
|
35 |
6 |
p. 1224-1230
|
artikel
|
| 57 |
The structure of the Si (211) surface
|
Fulk, C.
|
|
2006
|
35 |
6 |
p. 1449-1454
|
artikel
|
| 58 |
Thin film transmission matrix approach to fourier transform infrared analysis of HgCdTe multilayer heterostructures
|
Lofgreen, D. D.
|
|
2006
|
35 |
6 |
p. 1487-1490
|
artikel
|
| 59 |
Tunneling in long-wavelength infrared HgCdTe photodiodes
|
Krishnamurthy, S.
|
|
2006
|
35 |
6 |
p. 1399-1402
|
artikel
|
| 60 |
TV/4 dual-band HgCdTe infrared focal plane arrays with a 25-εm pitch and spatial coherence
|
Baylet, J.
|
|
2006
|
35 |
6 |
p. 1153-1158
|
artikel
|
| 61 |
VLWIR HgCdTe detector current-voltage analysis
|
Gilmore, Angelo Scotty
|
|
2006
|
35 |
6 |
p. 1403-1410
|
artikel
|
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