| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alternative boron precursors for BGaAs epitaxy
|
Geisz, J. F.
|
|
2001
|
30 |
11 |
p. 1387-1391
|
artikel
|
| 2 |
Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth
|
Zhang, R.
|
|
2001
|
30 |
11 |
p. 1370-1375
|
artikel
|
| 3 |
Cement-based controlled electrical resistivity materials
|
Wen, Sihai
|
|
2001
|
30 |
11 |
p. 1448-1451
|
artikel
|
| 4 |
Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Re
|
Söderström, D.
|
|
2001
|
30 |
11 |
p. 1476
|
artikel
|
| 5 |
Effect of substrate orientation on phase separation in epitaxial GaInAsSb
|
Wang, C. A.
|
|
2001
|
30 |
11 |
p. 1392-1396
|
artikel
|
| 6 |
Foreword
|
Tischler, Mike
|
|
2001
|
30 |
11 |
p. 1369
|
artikel
|
| 7 |
Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor
|
Blattner, A. J.
|
|
2001
|
30 |
11 |
p. 1408-1411
|
artikel
|
| 8 |
Impurities in hydride gases part 1: Investigation of trace moisture in the liquid and vapor phase of ultra-pure ammonia by FTIR spectroscopy
|
Funke, Hans H.
|
|
2001
|
30 |
11 |
p. 1438-1447
|
artikel
|
| 9 |
Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties
|
Knauer, A.
|
|
2001
|
30 |
11 |
p. 1421-1424
|
artikel
|
| 10 |
In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K
|
Hannappel, T.
|
|
2001
|
30 |
11 |
p. 1425-1428
|
artikel
|
| 11 |
In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry
|
Taniyasu, Yoshitaka
|
|
2001
|
30 |
11 |
p. 1402-1407
|
artikel
|
| 12 |
In-situ monitoring of the growth of Bi2 Te2 and Sb2 Te3 films and Bi2 Te3-Sb2 Te3 superlattice using spectroscopic ellipsometry
|
Cui, Hao
|
|
2001
|
30 |
11 |
p. 1376-1381
|
artikel
|
| 13 |
In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE
|
Pitts, O. J.
|
|
2001
|
30 |
11 |
p. 1412-1416
|
artikel
|
| 14 |
Interdiffusion analysis of the soldering reactions in Sn-3.5Ag/Cu couples
|
Bae, K. S.
|
|
2001
|
30 |
11 |
p. 1452-1457
|
artikel
|
| 15 |
Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding
|
Quitoriano, N.
|
|
2001
|
30 |
11 |
p. 1471-1475
|
artikel
|
| 16 |
Low-temperature air-fireable glass-free metallic thick-film electrical conductor materials
|
Liu, Zongrong
|
|
2001
|
30 |
11 |
p. 1458-1465
|
artikel
|
| 17 |
Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer
|
Bourret-Courchesne, E. D.
|
|
2001
|
30 |
11 |
p. 1417-1420
|
artikel
|
| 18 |
OMVPE growth of P-type GaN using solution Cp2Mg
|
Qi, Yundong
|
|
2001
|
30 |
11 |
p. 1382-1386
|
artikel
|
| 19 |
On the suitability of getter-purified hydrogen for the LP-MOVPE of (AlGa)As: A comparison to Pd-diffused hydrogen
|
Hardtdegen, H.
|
|
2001
|
30 |
11 |
p. 1397-1401
|
artikel
|
| 20 |
P-type carbon doping of GaSb
|
Wiersma, R.
|
|
2001
|
30 |
11 |
p. 1429-1432
|
artikel
|
| 21 |
Purification of dialkylzinc precursors using tertiary amine ligands
|
Smith, L. M.
|
|
2001
|
30 |
11 |
p. 1433-1437
|
artikel
|
| 22 |
The influence of high-temperature annealing on SiC schottky diode characteristics
|
Zhang, Q.
|
|
2001
|
30 |
11 |
p. 1466-1470
|
artikel
|
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