| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A detailed calculation of the auger lifetime in p-type HgCdTe
|
Krishnamurthy, S.
|
|
2000
|
29 |
6 |
p. 828-831
|
artikel
|
| 2 |
A model for dark current and multiplication in HgCdTe avalanche photodiodes
|
Velicu, S.
|
|
2000
|
29 |
6 |
p. 823-827
|
artikel
|
| 3 |
Analysis of 1/f noise in LWIR HgCdTe photodiodes
|
Bae, Soo Ho
|
|
2000
|
29 |
6 |
p. 877-882
|
artikel
|
| 4 |
CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics
|
Dhar, N. K.
|
|
2000
|
29 |
6 |
p. 748-753
|
artikel
|
| 5 |
Characteristics of gradually doped LWIR diodes by hydrogenation
|
Kim, Young-Ho
|
|
2000
|
29 |
6 |
p. 859-864
|
artikel
|
| 6 |
Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion
|
Antoszewski, J.
|
|
2000
|
29 |
6 |
p. 837-840
|
artikel
|
| 7 |
Composition and thickness control of thin LPE HgCdTe layers using x-ray diffraction
|
Tobin, S. P.
|
|
2000
|
29 |
6 |
p. 781-791
|
artikel
|
| 8 |
Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe
|
Lee, T. S.
|
|
2000
|
29 |
6 |
p. 869-872
|
artikel
|
| 9 |
Critical thickness in the HgCdTe/CdZnTe system
|
Berding, M. A.
|
|
2000
|
29 |
6 |
p. 676-679
|
artikel
|
| 10 |
Effect of dislocations on performance of LWIR HgCdTe photodiodes
|
Jówikowski, K.
|
|
2000
|
29 |
6 |
p. 736-741
|
artikel
|
| 11 |
Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1−xTe
|
Haakenaasen, R.
|
|
2000
|
29 |
6 |
p. 849-852
|
artikel
|
| 12 |
Enhanced diffusion and interdiffusion in HgCdTe from fermi-level effects
|
Robinson, H. G.
|
|
2000
|
29 |
6 |
p. 657-663
|
artikel
|
| 13 |
Equilibrium properties of indium and iodine in LWIR HgCdTe
|
Berding, M. A.
|
|
2000
|
29 |
6 |
p. 664-668
|
artikel
|
| 14 |
Evaluation of Zn uniformity in CdZnTe substrates
|
Hirano, R.
|
|
2000
|
29 |
6 |
p. 654-656
|
artikel
|
| 15 |
Extraction of mobile impurities from CdZnTe
|
Sen, Sanghamitra
|
|
2000
|
29 |
6 |
p. 775-780
|
artikel
|
| 16 |
Foreword
|
Bhat, Ishwara B.
|
|
2000
|
29 |
6 |
p. 629
|
artikel
|
| 17 |
Fundamental physics of infrared detector materials
|
Kinch, Michael A.
|
|
2000
|
29 |
6 |
p. 809-817
|
artikel
|
| 18 |
H2-based dry plasma etching for mesa structuring of HgCdTe
|
Smith, E. P. G.
|
|
2000
|
29 |
6 |
p. 853-858
|
artikel
|
| 19 |
HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature
|
Almeida, L. A.
|
|
2000
|
29 |
6 |
p. 754-759
|
artikel
|
| 20 |
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
|
Dell, J. M.
|
|
2000
|
29 |
6 |
p. 841-848
|
artikel
|
| 21 |
HgCdZnTe quaternary materials for lattice-matched two-color detectors
|
Johnson, S. M.
|
|
2000
|
29 |
6 |
p. 680-686
|
artikel
|
| 22 |
Impurity segregation in horizontal bridgman grown cadmium zinc telluride
|
Reese, D. J.
|
|
2000
|
29 |
6 |
p. 770-774
|
artikel
|
| 23 |
In-situ control of temperature and alloy composition of Cd1−xZnxTe grown by molecular beam epitaxy
|
Daraselia, M.
|
|
2000
|
29 |
6 |
p. 742-747
|
artikel
|
| 24 |
In-situ evaluation of the anodic oxide growth on Hg1−xCdxTe (MCT) using ellipsometry and second harmonic generation
|
Wark, A. W.
|
|
2000
|
29 |
6 |
p. 648-653
|
artikel
|
| 25 |
Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe
|
Chandra, D.
|
|
2000
|
29 |
6 |
p. 887-892
|
artikel
|
| 26 |
Large VLWIR Hg1−xCdxTe photovoltaic detectors
|
D’Souza, A. I.
|
|
2000
|
29 |
6 |
p. 630-635
|
artikel
|
| 27 |
MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band
|
Gordon, N. T.
|
|
2000
|
29 |
6 |
p. 818-822
|
artikel
|
| 28 |
Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates
|
Skauli, T.
|
|
2000
|
29 |
6 |
p. 687-690
|
artikel
|
| 29 |
Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B
|
Aqariden, F.
|
|
2000
|
29 |
6 |
p. 727-728
|
artikel
|
| 30 |
Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties
|
Chauvet, C.
|
|
2000
|
29 |
6 |
p. 883-886
|
artikel
|
| 31 |
Percolation problem in boron—Implanted mercury cadmium telluride
|
Mainzer, N.
|
|
2000
|
29 |
6 |
p. 792-797
|
artikel
|
| 32 |
Precise measurements of the dispersion of the index of refraction for Cd1−xZnxTe alloys
|
Peiris, F. C.
|
|
2000
|
29 |
6 |
p. 798-803
|
artikel
|
| 33 |
Selective epitaxy of cadmium telluride on silicon by MBE
|
Sporken, R.
|
|
2000
|
29 |
6 |
p. 760-764
|
artikel
|
| 34 |
Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy
|
Zhang, R.
|
|
2000
|
29 |
6 |
p. 765-769
|
artikel
|
| 35 |
Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe
|
Lam, T. T.
|
|
2000
|
29 |
6 |
p. 804-808
|
artikel
|
| 36 |
SIMS quantification of As and In in Hg1−xCdxTe materials of different x values
|
Wang, Larry
|
|
2000
|
29 |
6 |
p. 873-876
|
artikel
|
| 37 |
Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers
|
Nemirovsky, Y.
|
|
2000
|
29 |
6 |
p. 691-698
|
artikel
|
| 38 |
Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays
|
Ferret, P.
|
|
2000
|
29 |
6 |
p. 641-647
|
artikel
|
| 39 |
Strain relief in epitaxial HgCdTe by growth on a reticulated substrate
|
Rhiger, David R.
|
|
2000
|
29 |
6 |
p. 669-675
|
artikel
|
| 40 |
Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion
|
Kim, Young-Ho
|
|
2000
|
29 |
6 |
p. 832-836
|
artikel
|
| 41 |
Surface passivation of cadmium zinc telluride radiation detectors by potassium hydroxide solution
|
Chattopadhyay, Kaushik
|
|
2000
|
29 |
6 |
p. 708-712
|
artikel
|
| 42 |
TE- and TM-polarized optoelectronic properties of HgCdTe quantum wells
|
Menon, Vinod M.
|
|
2000
|
29 |
6 |
p. 865-868
|
artikel
|
| 43 |
The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan
|
Parent, D. W.
|
|
2000
|
29 |
6 |
p. 713-717
|
artikel
|
| 44 |
Time of flight experimental studies of CdZnTe radiation detectors
|
Erickson, J. C.
|
|
2000
|
29 |
6 |
p. 699-703
|
artikel
|
| 45 |
Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy
|
Zhao, Lijie
|
|
2000
|
29 |
6 |
p. 732-735
|
artikel
|
| 46 |
Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique
|
Suzuki, Kazuhiko
|
|
2000
|
29 |
6 |
p. 704-707
|
artikel
|
| 47 |
Vacancies in Hg1−xCdxTe
|
Chandra, D.
|
|
2000
|
29 |
6 |
p. 729-731
|
artikel
|
| 48 |
Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy
|
Ashokan, R.
|
|
2000
|
29 |
6 |
p. 636-640
|
artikel
|
| 49 |
Wurtzite CdS on CdTe grown by molecular beam epitaxy
|
Boieriu, P.
|
|
2000
|
29 |
6 |
p. 718-722
|
artikel
|
| 50 |
ZnS-based visible-blind UV detectors: Effects of isoelectronic traps
|
Sou, I. K.
|
|
2000
|
29 |
6 |
p. 723-726
|
artikel
|
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