| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes
|
Fang, Z. -Q.
|
|
|
29 |
4 |
p. 448-451
|
artikel
|
| 2 |
Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes
|
Fang, Z. -Q.
|
|
2000
|
29 |
4 |
p. 448-451
|
artikel
|
| 3 |
Characterizing the layer properties of AlGaAs/GaAs heteroface solar cell structures by specular spectral reflectance
|
Algora, Carlos
|
|
|
29 |
4 |
p. 436-442
|
artikel
|
| 4 |
Characterizing the layer properties of AlGaAs/GaAs heteroface solar cell structures by specular spectral reflectance
|
Algora, Carlos
|
|
2000
|
29 |
4 |
p. 436-442
|
artikel
|
| 5 |
Die bonding with Au/In isothermal solidification technique
|
Wang, T. B.
|
|
|
29 |
4 |
p. 443-447
|
artikel
|
| 6 |
Die bonding with Au/In isothermal solidification technique
|
Wang, T. B.
|
|
2000
|
29 |
4 |
p. 443-447
|
artikel
|
| 7 |
Effect of oxygen on the properties of encapsulated polycrystalline CdSe films
|
Lee, M. J.
|
|
|
29 |
4 |
p. 418-425
|
artikel
|
| 8 |
Effect of oxygen on the properties of encapsulated polycrystalline CdSe films
|
Lee, M. J.
|
|
2000
|
29 |
4 |
p. 418-425
|
artikel
|
| 9 |
Electrical characterization of ultrathin oxides of silicon grown by N2O plasma assisted oxidation
|
Bhat, V. K.
|
|
|
29 |
4 |
p. 399-404
|
artikel
|
| 10 |
Electrical characterization of ultrathin oxides of silicon grown by N2O plasma assisted oxidation
|
Bhat, V. K.
|
|
2000
|
29 |
4 |
p. 399-404
|
artikel
|
| 11 |
Interfacial reactions between liquid indium and Au-deposited substrates
|
Liu, Y. M.
|
|
|
29 |
4 |
p. 405-410
|
artikel
|
| 12 |
Interfacial reactions between liquid indium and Au-deposited substrates
|
Liu, Y. M.
|
|
2000
|
29 |
4 |
p. 405-410
|
artikel
|
| 13 |
MOCVD growth of GaBN on 6H-SiC (0001) substrates
|
Wei, C. H.
|
|
|
29 |
4 |
p. 452-456
|
artikel
|
| 14 |
MOCVD growth of GaBN on 6H-SiC (0001) substrates
|
Wei, C. H.
|
|
2000
|
29 |
4 |
p. 452-456
|
artikel
|
| 15 |
MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy
|
Haberland, K.
|
|
|
29 |
4 |
p. 468-472
|
artikel
|
| 16 |
MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy
|
Haberland, K.
|
|
2000
|
29 |
4 |
p. 468-472
|
artikel
|
| 17 |
Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE
|
Cederberg, J. G.
|
|
|
29 |
4 |
p. 426-429
|
artikel
|
| 18 |
Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE
|
Cederberg, J. G.
|
|
2000
|
29 |
4 |
p. 426-429
|
artikel
|
| 19 |
Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire
|
Zhi, D.
|
|
|
29 |
4 |
p. 457-462
|
artikel
|
| 20 |
Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire
|
Zhi, D.
|
|
2000
|
29 |
4 |
p. 457-462
|
artikel
|
| 21 |
Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy
|
Gurskii, A. L.
|
|
|
29 |
4 |
p. 430-435
|
artikel
|
| 22 |
Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy
|
Gurskii, A. L.
|
|
2000
|
29 |
4 |
p. 430-435
|
artikel
|
| 23 |
Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD
|
Xie, Z. Y.
|
|
|
29 |
4 |
p. 411-417
|
artikel
|
| 24 |
Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD
|
Xie, Z. Y.
|
|
2000
|
29 |
4 |
p. 411-417
|
artikel
|
| 25 |
XPS and ellipsometric characterization of zinc-BTA complex
|
Sirtori, V.
|
|
|
29 |
4 |
p. 463-467
|
artikel
|
| 26 |
XPS and ellipsometric characterization of zinc-BTA complex
|
Sirtori, V.
|
|
2000
|
29 |
4 |
p. 463-467
|
artikel
|
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