| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Al, B, and Ga ion-implantation doping of SiC
|
Handy, Evan M.
|
|
|
29 |
11 |
p. 1340-1345
|
artikel
|
| 2 |
Al, B, and Ga ion-implantation doping of SiC
|
Handy, Evan M.
|
|
2000
|
29 |
11 |
p. 1340-1345
|
artikel
|
| 3 |
Charge accumulation of quantum dots at room temperature
|
Stutz, C. E.
|
|
|
29 |
11 |
p. L29-L31
|
artikel
|
| 4 |
Charge accumulation of quantum dots at room temperature
|
Stutz, C. E.
|
|
2000
|
29 |
11 |
p. L29-L31
|
artikel
|
| 5 |
Chemical vapor deposition of B12As2 thin films on 6H-SiC
|
Wang, R. H.
|
|
|
29 |
11 |
p. 1304-1306
|
artikel
|
| 6 |
Chemical vapor deposition of B12As2 thin films on 6H-SiC
|
Wang, R. H.
|
|
2000
|
29 |
11 |
p. 1304-1306
|
artikel
|
| 7 |
Effect of copper and chlorine on the properties of SiO2 encapsulated polycrystalline CdSe films
|
Langford, R. M.
|
|
|
29 |
11 |
p. 1319-1327
|
artikel
|
| 8 |
Effect of copper and chlorine on the properties of SiO2 encapsulated polycrystalline CdSe films
|
Langford, R. M.
|
|
2000
|
29 |
11 |
p. 1319-1327
|
artikel
|
| 9 |
Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs
|
Gopal, V.
|
|
|
29 |
11 |
p. 1333-1339
|
artikel
|
| 10 |
Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs
|
Gopal, V.
|
|
2000
|
29 |
11 |
p. 1333-1339
|
artikel
|
| 11 |
Interfacial reactions between In 10Ag solders and Ag substrates
|
Liu, Y. M.
|
|
|
29 |
11 |
p. 1328-1332
|
artikel
|
| 12 |
Interfacial reactions between In 10Ag solders and Ag substrates
|
Liu, Y. M.
|
|
2000
|
29 |
11 |
p. 1328-1332
|
artikel
|
| 13 |
Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate
|
Hansen, D. M.
|
|
|
29 |
11 |
p. 1312-1318
|
artikel
|
| 14 |
Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate
|
Hansen, D. M.
|
|
2000
|
29 |
11 |
p. 1312-1318
|
artikel
|
| 15 |
Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure
|
Malikova, L.
|
|
|
29 |
11 |
p. 1346-1350
|
artikel
|
| 16 |
Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure
|
Malikova, L.
|
|
2000
|
29 |
11 |
p. 1346-1350
|
artikel
|
| 17 |
Proximal probe characterization of nanoscale charge transport properties in Co/SiO2 multilayer structures
|
Schaadt, D. M.
|
|
|
29 |
11 |
p. 1299-1303
|
artikel
|
| 18 |
Proximal probe characterization of nanoscale charge transport properties in Co/SiO2 multilayer structures
|
Schaadt, D. M.
|
|
2000
|
29 |
11 |
p. 1299-1303
|
artikel
|
| 19 |
The effect of small additions of copper on the aging kinetics of the intermetallic layer and intermetallic particles of eutectic tin-silver solder joints
|
Sigelko, J.
|
|
|
29 |
11 |
p. 1307-1311
|
artikel
|
| 20 |
The effect of small additions of copper on the aging kinetics of the intermetallic layer and intermetallic particles of eutectic tin-silver solder joints
|
Sigelko, J.
|
|
2000
|
29 |
11 |
p. 1307-1311
|
artikel
|
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