| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Annealing behavior of InAs/GaAs quantum dot structures
|
Wang, Z. M.
|
|
1998
|
27 |
2 |
p. 59-61
|
artikel
|
| 2 |
Characterization of deep centers in undoped semi-insulating GaAs substrates by normalized thermally stimulated current spectroscopy: Comparison of 100 and 150 mm wafers
|
Fang, Z. Q.
|
|
1998
|
27 |
2 |
p. 62-68
|
artikel
|
| 3 |
Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources
|
Han, B. K.
|
|
1998
|
27 |
2 |
p. 81-84
|
artikel
|
| 4 |
ECR plasma etch fabrication of C-doped base InGaAs/InP DHBT structures: A comparison of CH4/H2/Ar vs BCl3/N2 plasma etch chemistries
|
Kopf, R. F.
|
|
1998
|
27 |
2 |
p. 69-72
|
artikel
|
| 5 |
Galvanic corrosion effects in InP-based laser ridge structures
|
Ivey, D. G.
|
|
1998
|
27 |
2 |
p. 89-95
|
artikel
|
| 6 |
Low threshold 3 μm interband cascade “W” laser
|
Felix, C. L.
|
|
1998
|
27 |
2 |
p. 77-80
|
artikel
|
| 7 |
Rapid thermal annealing of zirconia films deposited by spray pyrolysis
|
Beltrán, N. H.
|
|
1998
|
27 |
2 |
p. L9-L11
|
artikel
|
| 8 |
RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix
|
Krestnikov, I. L.
|
|
1998
|
27 |
2 |
p. 73-76
|
artikel
|
| 9 |
Structure investigation on Hg1−xCdxTe liquid phase epitaxial films grown by the meltetch technique
|
Li, Biao
|
|
1998
|
27 |
2 |
p. 51-54
|
artikel
|
| 10 |
Thick crack-free CaF2 epitaxial layer on GaAs (100) substrate by molecular beam epitaxy
|
Shi, Z.
|
|
1998
|
27 |
2 |
p. 55-58
|
artikel
|
| 11 |
ZnSe heteroepitaxy on GaAs (110) substrate
|
Cho, M. W.
|
|
1998
|
27 |
2 |
p. 85-88
|
artikel
|
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