| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted MOVPE
|
Parent, D. W.
|
|
1997
|
26 |
6 |
p. 710-714
|
artikel
|
| 2 |
An optical alternative to the hall test
|
Clarke, Frederick W.
|
|
1997
|
26 |
6 |
p. 593-599
|
artikel
|
| 3 |
Application of urbach rule optical absorption to composition measurement of Cd1−yZnyTe
|
Syllaios, A. J.
|
|
1997
|
26 |
6 |
p. 567-570
|
artikel
|
| 4 |
Applications of thermodynamical modeling in molecular beam epitaxy of CdxHg1-xTe
|
Colin, T.
|
|
1997
|
26 |
6 |
p. 688-696
|
artikel
|
| 5 |
Behavior of p-type dopants in HgCdTe
|
Berding, M. A.
|
|
1997
|
26 |
6 |
p. 625-628
|
artikel
|
| 6 |
Characterization of CdTe/Hg1−xCdxTe heterostructures by high-resolution x-ray diffraction
|
Mainzer, N.
|
|
1997
|
26 |
6 |
p. 606-609
|
artikel
|
| 7 |
Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures
|
Weiler, M. H.
|
|
1997
|
26 |
6 |
p. 635-642
|
artikel
|
| 8 |
Degradation of ZnSe/ZnTe multiquantum well contacts to p-ZnSe
|
Fijol, John J.
|
|
1997
|
26 |
6 |
p. 715-722
|
artikel
|
| 9 |
Development of a 64 × 64 CdZnTe array and associated readout integrated circuit for use in nuclear medicine
|
Barber, H. B.
|
|
1997
|
26 |
6 |
p. 765-772
|
artikel
|
| 10 |
Device modeling of HgCdTe vertically integrated photodiodes
|
Mao, D. H.
|
|
1997
|
26 |
6 |
p. 678-682
|
artikel
|
| 11 |
Electronic structure, absorption coefficient, and auger rate in HgCdTe and thallium-based alloys
|
Krishnamurthy, Srinivasan
|
|
1997
|
26 |
6 |
p. 571-577
|
artikel
|
| 12 |
Evaluation of low-temperature interdiffusion coefficients in Hg-based superlattices by monitoring the E1 reflectance peak
|
Mattson, M. A.
|
|
1997
|
26 |
6 |
p. 578-583
|
artikel
|
| 13 |
Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design
|
Sudhaesanan, R.
|
|
1997
|
26 |
6 |
p. 745-749
|
artikel
|
| 14 |
1/f noise studies in uncooled narrow gap Hg1−xCdxTe non-equilibrium diodes
|
Elliott, C. T.
|
|
1997
|
26 |
6 |
p. 643-648
|
artikel
|
| 15 |
Foreword
|
|
|
1997
|
26 |
6 |
p. 475
|
artikel
|
| 16 |
Gas source molecular beam epitaxy growth of SrS:Ce for flat panel displays
|
Tong, W.
|
|
1997
|
26 |
6 |
p. 728-731
|
artikel
|
| 17 |
High performance SWIR HgCdTe detector arrays
|
Bubulac, L. O.
|
|
1997
|
26 |
6 |
p. 649-655
|
artikel
|
| 18 |
Improved determination of matrix compostion of Hg1−xCdxTe by SIMS
|
Sheng, Jack
|
|
1997
|
26 |
6 |
p. 588-592
|
artikel
|
| 19 |
Improving material characteristics and reproducibility of MBE HgCdTe
|
Edwall, D. D.
|
|
1997
|
26 |
6 |
p. 493-501
|
artikel
|
| 20 |
Inter-layer subb and mixing in MBE-grown HgTe/CdTe superlattices
|
Park, J. W.
|
|
1997
|
26 |
6 |
p. 584-587
|
artikel
|
| 21 |
Investigation of the effects of polishing and etching on the quality of Cd1−xZnxTe using spatial mapping techniques
|
Yoon, H.
|
|
1997
|
26 |
6 |
p. 529-533
|
artikel
|
| 22 |
Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates
|
Rhiger, David R.
|
|
1997
|
26 |
6 |
p. 515-523
|
artikel
|
| 23 |
Linear x-ray detector array made on bulk CdZnTe for 30∼100 keV energy
|
Yoo, S. S.
|
|
1997
|
26 |
6 |
p. 750-755
|
artikel
|
| 24 |
MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors
|
Wu, Owen K.
|
|
1997
|
26 |
6 |
p. 488-492
|
artikel
|
| 25 |
MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays
|
Mitra, P.
|
|
1997
|
26 |
6 |
p. 482-487
|
artikel
|
| 26 |
Modeling of heterojunction HgCdTe photodiodes using approximate k • p approach
|
Ariel, V.
|
|
1997
|
26 |
6 |
p. 673-677
|
artikel
|
| 27 |
Modeling of junction formation and drive-in in ion implanted HgCdTe
|
Holander-Gleixner, S.
|
|
1997
|
26 |
6 |
p. 629-634
|
artikel
|
| 28 |
Mode of arsenic incorporation in HgCdTe grown by MBE
|
Sivananthan, S.
|
|
1997
|
26 |
6 |
p. 621-624
|
artikel
|
| 29 |
Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band
|
Rajavel, R. D.
|
|
1997
|
26 |
6 |
p. 476-481
|
artikel
|
| 30 |
Molecular beam epitaxial growth of P-ZnSe:N using a novel plasma source
|
Kimura, K.
|
|
1997
|
26 |
6 |
p. 705-709
|
artikel
|
| 31 |
New developments in CdTe and CdZnTe detectors for X and γ-ray applications
|
Verger, L.
|
|
1997
|
26 |
6 |
p. 738-744
|
artikel
|
| 32 |
New mechanisms in photo-assisted MOVPE of II-VI semiconductors
|
Irvine, S. J. C.
|
|
1997
|
26 |
6 |
p. 723-727
|
artikel
|
| 33 |
New surface treatment method for improving the interface characteristics of CdTe/Hg1−xCdxTe heterostructure
|
Lee, Seong Hoon
|
|
1997
|
26 |
6 |
p. 556-560
|
artikel
|
| 34 |
Numerical simulation of clustering phenomena for point-defects in HgCdTe
|
Sugiyama, Iwao
|
|
1997
|
26 |
6 |
p. 616-620
|
artikel
|
| 35 |
Optimization of the structural properties of Hg1−x CdxTe (x = 0.18−0.30) alloys: Growth and modeling
|
Parikh, A.
|
|
1997
|
26 |
6 |
p. 524-528
|
artikel
|
| 36 |
Photocurrent effect on the zero-Bias dynamic resistance of HgCdTe photodiode
|
Kim, Kwan
|
|
1997
|
26 |
6 |
p. 662-666
|
artikel
|
| 37 |
Photoluminescence of nitrogen-doped zinc selenide epilayers
|
Moldovan, M.
|
|
1997
|
26 |
6 |
p. 732-737
|
artikel
|
| 38 |
Resonant-cavity infrared optoelectronic devices
|
Pautrat, J. L.
|
|
1997
|
26 |
6 |
p. 667-672
|
artikel
|
| 39 |
Selective area epitaxy of CdTe
|
Luo, Y. Y.
|
|
1997
|
26 |
6 |
p. 511-514
|
artikel
|
| 40 |
Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures
|
Bevan, M. J.
|
|
1997
|
26 |
6 |
p. 502-506
|
artikel
|
| 41 |
Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy
|
Han, M. S.
|
|
1997
|
26 |
6 |
p. 507-510
|
artikel
|
| 42 |
Structural properties of ZnSy Se1−yZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy
|
Zhang, X. G.
|
|
1997
|
26 |
6 |
p. 697-704
|
artikel
|
| 43 |
Study of contacts to CdZnTe radiation detectors
|
Nemirovsky, Y.
|
|
1997
|
26 |
6 |
p. 756-764
|
artikel
|
| 44 |
Surface cleaning and etching of CdZnTe and CdTe in H2/Ar, CH4/H2/Ar, and CH4/H2/N2/Ar electron cyclotron resonance plasmas
|
Keller, Robert C.
|
|
1997
|
26 |
6 |
p. 542-551
|
artikel
|
| 45 |
Surface cracking in Zinc diffused CdTe
|
Clark, J. C.
|
|
1997
|
26 |
6 |
p. 610-615
|
artikel
|
| 46 |
Surface passivation of HgCdTe by CdZnTe and its characteristics
|
Lee, T. S.
|
|
|
26 |
6 |
p. 552-555
|
artikel
|
| 47 |
Surface passivation of HgCdTe by CdZnTe and its characteristics
|
Lee, T. S.
|
|
1997
|
26 |
6 |
p. 552-555
|
artikel
|
| 48 |
Temperature dependence of the optical properties of Hg1−xCdxTe
|
Kim, Charles C.
|
|
1997
|
26 |
6 |
p. 561-566
|
artikel
|
| 49 |
Thermodynamical properties of thallium-based III-V materials
|
Berding, M. A.
|
|
1997
|
26 |
6 |
p. 683-687
|
artikel
|
| 50 |
The use of atomic hydrogen for substrate cleaning for subsequent growth of II-VI semiconductors
|
Hirsch, L. S.
|
|
1997
|
26 |
6 |
p. 534-541
|
artikel
|
| 51 |
VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications
|
D’souza, A. I.
|
|
1997
|
26 |
6 |
p. 656-661
|
artikel
|
| 52 |
X-ray rocking curve analysis of ion implanted mercury cadmium telluride
|
Williams, B. L.
|
|
1997
|
26 |
6 |
p. 600-605
|
artikel
|
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