| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Chemical composition and thermal stability of 2 butyl, 5 chloro, benzimidazole film
|
Sirtori, V.
|
|
|
26 |
5 |
p. 459-462
|
artikel
|
| 2 |
Chemical composition and thermal stability of 2 butyl, 5 chloro, benzimidazole film
|
Sirtori, V.
|
|
1997
|
26 |
5 |
p. 459-462
|
artikel
|
| 3 |
Defect characterization of n-type Si1−xGex after 1.0 kev helium-ion etching
|
Goodman, S. A.
|
|
|
26 |
5 |
p. 463-469
|
artikel
|
| 4 |
Defect characterization of n-type Si1−xGex after 1.0 kev helium-ion etching
|
Goodman, S. A.
|
|
1997
|
26 |
5 |
p. 463-469
|
artikel
|
| 5 |
Dry etching of III-V semiconductors in IBr/Ar electron cyclotron resonance plasmas
|
Lee, J. W.
|
|
|
26 |
5 |
p. 429-435
|
artikel
|
| 6 |
Dry etching of III-V semiconductors in IBr/Ar electron cyclotron resonance plasmas
|
Lee, J. W.
|
|
1997
|
26 |
5 |
p. 429-435
|
artikel
|
| 7 |
Improved reproducibility of AiGalnAs laser threshold by InP substrate deoxidation under phosphorous flux
|
Harmand, J. C.
|
|
|
26 |
5 |
p. L9-L12
|
artikel
|
| 8 |
Improved reproducibility of AiGalnAs laser threshold by InP substrate deoxidation under phosphorous flux
|
Harmand, J. C.
|
|
1997
|
26 |
5 |
p. L9-L12
|
artikel
|
| 9 |
Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases
|
Kim, Moo-Sung
|
|
|
26 |
5 |
p. 436-439
|
artikel
|
| 10 |
Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases
|
Kim, Moo-Sung
|
|
1997
|
26 |
5 |
p. 436-439
|
artikel
|
| 11 |
LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers
|
Strecker, B. N.
|
|
|
26 |
5 |
p. 444-448
|
artikel
|
| 12 |
LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers
|
Strecker, B. N.
|
|
1997
|
26 |
5 |
p. 444-448
|
artikel
|
| 13 |
Nearly room-temperature type-II quantum-well lasers at 3–4 μm
|
Lin, Chih-Hsiang
|
|
|
26 |
5 |
p. 440-443
|
artikel
|
| 14 |
Nearly room-temperature type-II quantum-well lasers at 3–4 μm
|
Lin, Chih-Hsiang
|
|
1997
|
26 |
5 |
p. 440-443
|
artikel
|
| 15 |
Permanent-magnet materials: Research directions and opportunities
|
Richman, R. H.
|
|
|
26 |
5 |
p. 415-422
|
artikel
|
| 16 |
Permanent-magnet materials: Research directions and opportunities
|
Richman, R. H.
|
|
1997
|
26 |
5 |
p. 415-422
|
artikel
|
| 17 |
Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga Ions
|
Jasinski, J.
|
|
|
26 |
5 |
|
artikel
|
| 18 |
Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga Ions
|
Jasinski, J.
|
|
1997
|
26 |
5 |
p. 449-458
|
artikel
|
| 19 |
Surface treatment of znse substrate and homoepitaxy of znse
|
Cho, M. W.
|
|
|
26 |
5 |
p. 423-428
|
artikel
|
| 20 |
Surface treatment of znse substrate and homoepitaxy of znse
|
Cho, M. W.
|
|
1997
|
26 |
5 |
p. 423-428
|
artikel
|
| 21 |
Thermally stimulated current measurements on a UV irradiated organic photoreceptor layer
|
Webb, D. P.
|
|
|
26 |
5 |
p. 470-473
|
artikel
|
| 22 |
Thermally stimulated current measurements on a UV irradiated organic photoreceptor layer
|
Webb, D. P.
|
|
1997
|
26 |
5 |
p. 470-473
|
artikel
|
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