| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Cu3Ge ohmic contacts to n-type GaAs
|
Oktyabrsky, S.
|
|
1996
|
25 |
11 |
p. 1662-1672
|
artikel
|
| 2 |
Deep levels, electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes
|
Chen, J. F.
|
|
1996
|
25 |
11 |
p. 1790-1796
|
artikel
|
| 3 |
Effect of thin film coating of Au on joint strength in invar-invar packages
|
Wang, S. C.
|
|
1996
|
25 |
11 |
p. 1797-1800
|
artikel
|
| 4 |
Epitaxial TiN based contacts for silicon devices
|
Vispute, R. D.
|
|
1996
|
25 |
11 |
p. 1740-1747
|
artikel
|
| 5 |
Foreword
|
|
|
1996
|
25 |
11 |
p. 1661
|
artikel
|
| 6 |
Investigation of SnPbAg solder for die attach of GaAs devices
|
Paesey, J. M.
|
|
1996
|
25 |
11 |
p. 1715-1724
|
artikel
|
| 7 |
LaNiO3 and Cu3Ge contacts to YBa2Cu3O7-x films
|
Kumar, D.
|
|
1996
|
25 |
11 |
p. 1760-1766
|
artikel
|
| 8 |
Metal contacts to gallium arsenide
|
Baenard, W. O.
|
|
1996
|
25 |
11 |
p. 1695-1702
|
artikel
|
| 9 |
Metal suicides: Active elements of ULSI contacts
|
Osburn, C. M.
|
|
1996
|
25 |
11 |
p. 1725-1739
|
artikel
|
| 10 |
Microstructure and chemistry of Cu-Ge ohmic contact layers to GaAs
|
Oktyabrsky, S.
|
|
1996
|
25 |
11 |
p. 1673-1683
|
artikel
|
| 11 |
Microstructure mapping of interconnects by orientation imaging microscopy
|
Field, David P.
|
|
1996
|
25 |
11 |
p. 1767-1771
|
artikel
|
| 12 |
Microstructures and electrical properties of SrRuO3 thin films on LaAIO3 substrates
|
Chu, F.
|
|
1996
|
25 |
11 |
p. 1754-1759
|
artikel
|
| 13 |
Microstructures of parylene-N thin films and the effect on copper diffusion
|
Yang, G. -R.
|
|
1996
|
25 |
11 |
p. 1778-1783
|
artikel
|
| 14 |
NiGe-based ohmic contacts to n-type GaAs
|
Furumai, Masaki
|
|
1996
|
25 |
11 |
p. 1684-1694
|
artikel
|
| 15 |
Ohmic contacts and schottky barriers to n-GaN
|
Fan, Z.
|
|
1996
|
25 |
11 |
p. 1703-1708
|
artikel
|
| 16 |
Ohmic contacts to n-type GaN
|
Miller, Stephen
|
|
1996
|
25 |
11 |
p. 1709-1714
|
artikel
|
| 17 |
Optimization of saturation current density of PECVD SiN coated phosphorus diffused emitters using neural network modeling
|
Cai, L.
|
|
1996
|
25 |
11 |
p. 1784-1789
|
artikel
|
| 18 |
Schottky barrier heights on IV-IV compound semiconductors
|
Meyer, F.
|
|
1996
|
25 |
11 |
p. 1748-1753
|
artikel
|
| 19 |
The Role of oxygen diffusion in photoinduced changes of the electronic and optical properties in amorphous indium oxide
|
Claflin, B.
|
|
1996
|
25 |
11 |
p. 1772-1777
|
artikel
|
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