| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A microscopic model for resistance drift in amorphous Ge2Sb2Te5
|
Im, Jino
|
|
2011
|
11 |
2S |
p. e82-e84
nvt p.
|
artikel
|
| 2 |
Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices
|
Biju, Kuyyadi P.
|
|
2011
|
11 |
2S |
p. e62-e65
nvt p.
|
artikel
|
| 3 |
Bipolar resistive switching in oxides: Mechanisms and scaling
|
Bruchhaus, Rainer
|
|
2011
|
11 |
2S |
p. e75-e78
nvt p.
|
artikel
|
| 4 |
Challenges and opportunities for future non-volatile memory technology
|
Nishi, Yoshio
|
|
2011
|
11 |
2S |
p. e101-e103
nvt p.
|
artikel
|
| 5 |
Charge-based nonvolatile memory: Near the end of the roadmap?
|
Van Houdt, Jan
|
|
2011
|
11 |
2S |
p. e21-e24
nvt p.
|
artikel
|
| 6 |
Charge loss in WSi2 nanocrystals nonvolatile memory with SiO2/Si3N4/SiO2 tunnel layer
|
Lee, Dong Uk
|
|
2011
|
11 |
2S |
p. e6-e9
nvt p.
|
artikel
|
| 7 |
Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device
|
Kim, Jong Yun
|
|
2011
|
11 |
2S |
p. e35-e39
nvt p.
|
artikel
|
| 8 |
Dependence of nonvolatile memory characteristics on curing temperature for polymer memory-cell embedded with Au nanocrystals in poly(N-vinylcarbazole)
|
Lee, Jong-Dae
|
|
2011
|
11 |
2S |
p. e25-e29
nvt p.
|
artikel
|
| 9 |
Dependence of resistive switching behaviors on oxygen content of the Pt/TiO2−x/Pt matrix
|
Bae, Yoon Cheol
|
|
2011
|
11 |
2S |
p. e66-e69
nvt p.
|
artikel
|
| 10 |
Dependence of the trap density and the distribution on the current bistability in organic bistable devices
|
You, Chan Ho
|
|
2011
|
11 |
2S |
p. e40-e43
nvt p.
|
artikel
|
| 11 |
Editorial Board
|
|
|
2011
|
11 |
2S |
p. i-
1 p.
|
artikel
|
| 12 |
Effect of W impurity on resistance switching characteristics of NiO x films
|
Kim, Jonggi
|
|
2011
|
11 |
2S |
p. e70-e74
nvt p.
|
artikel
|
| 13 |
Effects of defects on the switching properties of the nanostructured cells of a single layer and a synthetic ferrimagnet
|
Lee, Seul Gee
|
|
2011
|
11 |
2S |
p. e95-e100
nvt p.
|
artikel
|
| 14 |
Enhanced tunneling properties of band-engineered (HfO2) x (SiO2)1−x /SiO2 double dielectric layers for non-volatile flash memory device
|
Heo, Min-Young
|
|
2011
|
11 |
2S |
p. e16-e20
nvt p.
|
artikel
|
| 15 |
Guest Editorial
|
Park, Jea-Gun
|
|
2011
|
11 |
2S |
p. e1-
1 p.
|
artikel
|
| 16 |
Improved resistive switching properties in Pt/Pr0.7Ca0.3MnO3/Y2O3-stabilized ZrO2/W via-hole structures
|
Liu, Xinjun
|
|
2011
|
11 |
2S |
p. e58-e61
nvt p.
|
artikel
|
| 17 |
Investigation of 3-D stacked NAND flash memory cell string having 4F2 cell size and shield layer for suppressing cross-talk
|
Jeong, Min-Kyu
|
|
2011
|
11 |
2S |
p. e2-e5
nvt p.
|
artikel
|
| 18 |
Magnetic noise spectra and spin transfer torque of a magnetic tunnel junction with an exchange biased synthetic ferrimagnetic reference layer
|
You, Chun-Yeol
|
|
2011
|
11 |
2S |
p. e92-e94
nvt p.
|
artikel
|
| 19 |
Multi-layer stacked OHA and AHA tunnel barriers for charge trap flash non-volatile memory application
|
Son, Jung-Woo
|
|
2011
|
11 |
2S |
p. e10-e15
nvt p.
|
artikel
|
| 20 |
Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe
|
Zhang, Gang
|
|
2011
|
11 |
2S |
p. e79-e81
nvt p.
|
artikel
|
| 21 |
Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application
|
Park, Youn Jung
|
|
2011
|
11 |
2S |
p. e30-e34
nvt p.
|
artikel
|
| 22 |
Recent results on organic-based molecular memories
|
De Salvo, Barbara
|
|
2011
|
11 |
2S |
p. e49-e57
nvt p.
|
artikel
|
| 23 |
Scanning probe memories – Technology and applications
|
Wright, C. David
|
|
2011
|
11 |
2S |
p. e104-e109
nvt p.
|
artikel
|
| 24 |
Solution-processable fullerene derivatives for organic photovoltaics and n-type thin-film transistors
|
Nam, Sun Young
|
|
2011
|
11 |
2S |
p. e44-e48
nvt p.
|
artikel
|
| 25 |
Special issue contents
|
|
|
2011
|
11 |
2S |
p. ii-iii
nvt p.
|
artikel
|
| 26 |
Unified physical modeling of reliability mechanisms and scaling perspective of phase change memory
|
Ielmini, Daniele
|
|
2011
|
11 |
2S |
p. e85-e91
nvt p.
|
artikel
|
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