| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Al-doping effects on structure, electrical and optical properties of c-axis-orientated ZnO:Al thin films
|
Zi-qiang, Xu
|
|
2006
|
9 |
1-3 |
p. 132-135
4 p.
|
artikel
|
| 2 |
Analysis of electrically active N–O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy
|
Alt, H. Ch.
|
|
2006
|
9 |
1-3 |
p. 114-116
3 p.
|
artikel
|
| 3 |
Boundaries of 7×7 reconstruction domains on Si(111)
|
Zhou, Yinghui
|
|
2006
|
9 |
1-3 |
p. 279-282
4 p.
|
artikel
|
| 4 |
Cathodoluminescence characterization of SnO2 nanoribbons grown by vapor transport technique
|
Yuan, X.L.
|
|
2006
|
9 |
1-3 |
p. 331-336
6 p.
|
artikel
|
| 5 |
Cathodoluminescence characterization of ZnO nanotubes grown by MOCVD on sapphire substrate
|
Yuan, X.L.
|
|
2006
|
9 |
1-3 |
p. 146-150
5 p.
|
artikel
|
| 6 |
Cathodoluminescence spectral imaging as a technique for the study of cavity degradation of high-power QW lasers
|
Avella, M.
|
|
2006
|
9 |
1-3 |
p. 204-209
6 p.
|
artikel
|
| 7 |
Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits
|
Kissinger, G.
|
|
2006
|
9 |
1-3 |
p. 236-240
5 p.
|
artikel
|
| 8 |
Competition between internal and heavy doping gettering options in epi-silicon
|
Frigeri, C.
|
|
2006
|
9 |
1-3 |
p. 74-77
4 p.
|
artikel
|
| 9 |
Contact-free defect investigation of wafer-annealed Fe-doped SI-InP
|
Hahn, S.
|
|
2006
|
9 |
1-3 |
p. 355-358
4 p.
|
artikel
|
| 10 |
Contact-less electrical defect characterisation of silicon by MD-PICTS
|
Dornich, K.
|
|
2006
|
9 |
1-3 |
p. 241-245
5 p.
|
artikel
|
| 11 |
Deep levels in Yb–Al co-doped GaAs grown by liquid phase epitaxy
|
Kaniewska, M.
|
|
2006
|
9 |
1-3 |
p. 366-370
5 p.
|
artikel
|
| 12 |
Defect analysis in organic semiconductors
|
Nguyen, T.P.
|
|
2006
|
9 |
1-3 |
p. 198-203
6 p.
|
artikel
|
| 13 |
Defect influence on luminescence efficiency of GaN-based LEDs
|
Li, Shuping
|
|
2006
|
9 |
1-3 |
p. 371-374
4 p.
|
artikel
|
| 14 |
Defect observation in SiC wafers by room-temperature photoluminescence mapping
|
Higashi, E.
|
|
2006
|
9 |
1-3 |
p. 53-57
5 p.
|
artikel
|
| 15 |
Defects in Ge-doped Cz-Si annealed under high stress
|
Misiuk, A.
|
|
2006
|
9 |
1-3 |
p. 82-87
6 p.
|
artikel
|
| 16 |
Defects in nitride semiconductors: From nanoscale imaging to macroscopic device behavior
|
Simpkins, B.S.
|
|
2006
|
9 |
1-3 |
p. 308-314
7 p.
|
artikel
|
| 17 |
Defect studies on silicon and silicon–germanium for PV and optoelectronic applications
|
Pizzini, S.
|
|
2006
|
9 |
1-3 |
p. 66-73
8 p.
|
artikel
|
| 18 |
Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy
|
De Gryse, Olivier
|
|
2006
|
9 |
1-3 |
p. 246-251
6 p.
|
artikel
|
| 19 |
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
|
Li, Z.
|
|
2006
|
9 |
1-3 |
p. 283-287
5 p.
|
artikel
|
| 20 |
Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry
|
Salman, F.
|
|
2006
|
9 |
1-3 |
p. 375-379
5 p.
|
artikel
|
| 21 |
Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon
|
Salman, F.
|
|
2006
|
9 |
1-3 |
p. 62-65
4 p.
|
artikel
|
| 22 |
Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography
|
Yoshino, K.
|
|
2006
|
9 |
1-3 |
p. 45-48
4 p.
|
artikel
|
| 23 |
Dislocations formed under longitudinal stress field in epitaxial-lateral-overgrowth GaN
|
Cai, Duanjun
|
|
2006
|
9 |
1-3 |
p. 15-18
4 p.
|
artikel
|
| 24 |
Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy
|
Seghier, D.
|
|
2006
|
9 |
1-3 |
p. 41-44
4 p.
|
artikel
|
| 25 |
Editorial Board
|
|
|
2006
|
9 |
1-3 |
p. CO2-
1 p.
|
artikel
|
| 26 |
Effect of annealing atmospheres on the void defects in large-diameter CZSi single crystals
|
Liu, Caichi
|
|
2006
|
9 |
1-3 |
p. 117-120
4 p.
|
artikel
|
| 27 |
Effect of light germanium doping on thermal donors in Czochralski silicon wafers
|
Cui, Can
|
|
2006
|
9 |
1-3 |
p. 110-113
4 p.
|
artikel
|
| 28 |
Effect of pressure annealing on structure of Si:Mn
|
Misiuk, A.
|
|
2006
|
9 |
1-3 |
p. 270-274
5 p.
|
artikel
|
| 29 |
Effect of the oblique excitation and detection on the cathodoluminescence spectra
|
Sekiguchi, T.
|
|
2006
|
9 |
1-3 |
p. 19-24
6 p.
|
artikel
|
| 30 |
Effects of radiation-induced defects on device performance in electron-irradiated SiC-MESFETs
|
Takakura, K.
|
|
2006
|
9 |
1-3 |
p. 327-330
4 p.
|
artikel
|
| 31 |
Electrical activity of deep levels in the presence of InAs/GaAs quantum dots
|
Kaniewska, M.
|
|
2006
|
9 |
1-3 |
p. 36-40
5 p.
|
artikel
|
| 32 |
Electrical activity of dislocations in epitaxial ZnO- and GaN-layers analyzed by holography in a transmission electron microscope
|
Müller, E.
|
|
2006
|
9 |
1-3 |
p. 127-131
5 p.
|
artikel
|
| 33 |
Electric-field-enhanced electron emission from the EL5 deep-level defect in GaAs
|
Tsarova, Tatsiana
|
|
2006
|
9 |
1-3 |
p. 351-354
4 p.
|
artikel
|
| 34 |
Electron irradiation-induced defects in InP pre-annealed at high temperature
|
Zhao, Y.W.
|
|
2006
|
9 |
1-3 |
p. 380-383
4 p.
|
artikel
|
| 35 |
Etching, Raman and PL study of thick HVPE-grown GaN
|
Weyher, J.L.
|
|
2006
|
9 |
1-3 |
p. 175-179
5 p.
|
artikel
|
| 36 |
Feature extraction for structured surface based on surface networks and edge detection
|
Xiao, S.
|
|
2006
|
9 |
1-3 |
p. 210-214
5 p.
|
artikel
|
| 37 |
FTIR spectroscopic system with improved sensitivity
|
Akhmetov, V.D.
|
|
2006
|
9 |
1-3 |
p. 92-95
4 p.
|
artikel
|
| 38 |
High-resolution photoinduced transient spectroscopy of defect centres in semi-insulating InP obtained by iron diffusion
|
Kamiński, P.
|
|
2006
|
9 |
1-3 |
p. 384-389
6 p.
|
artikel
|
| 39 |
High-resolution TEM observation of AlN grown on on-axis and off-cut SiC substrates
|
Bai, J.
|
|
2006
|
9 |
1-3 |
p. 180-183
4 p.
|
artikel
|
| 40 |
HRTEM observation on microstructures in the Ge-implanted silicon wafers re-processed by solid phase epitaxy
|
Xiao, Qinghua
|
|
2006
|
9 |
1-3 |
p. 121-126
6 p.
|
artikel
|
| 41 |
InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides
|
Liu, B.
|
|
2006
|
9 |
1-3 |
p. 225-229
5 p.
|
artikel
|
| 42 |
Investigation of oval defects in (In)Ga(Al)As/GaAs heterostructures by spatially resolved photoluminescence and micro-cathodoluminescence
|
Szerling, Anna
|
|
2006
|
9 |
1-3 |
p. 25-30
6 p.
|
artikel
|
| 43 |
Isothermal deep-level transient spectroscopy study of metastable defects in hydrogen-implanted n-type silicon
|
Tokuda, Yutaka
|
|
2006
|
9 |
1-3 |
p. 288-291
4 p.
|
artikel
|
| 44 |
Misfit dislocation dipoles in Si/SiGe/Si heterostructures on SOI
|
Ma, Tongda
|
|
2006
|
9 |
1-3 |
p. 49-52
4 p.
|
artikel
|
| 45 |
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
|
Zhao, C.
|
|
2006
|
9 |
1-3 |
p. 31-35
5 p.
|
artikel
|
| 46 |
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0 001) Si faces
|
Sun, G.S.
|
|
2006
|
9 |
1-3 |
p. 275-278
4 p.
|
artikel
|
| 47 |
Nano-structure formed by nanosecond laser annealing on amorphous Si surface
|
Klinger, D.
|
|
2006
|
9 |
1-3 |
p. 323-326
4 p.
|
artikel
|
| 48 |
Noise spectroscopy on defects with thermally activated capture in GaAs
|
Seghier, D.
|
|
2006
|
9 |
1-3 |
p. 359-361
3 p.
|
artikel
|
| 49 |
Non-contact charge-voltage method for dielectric characterization on small test areas of IC product wafers
|
Edelman, Piotr
|
|
2006
|
9 |
1-3 |
p. 252-256
5 p.
|
artikel
|
| 50 |
[No title]
|
Wang, Zhanguo
|
|
2006
|
9 |
1-3 |
p. 1-
1 p.
|
artikel
|
| 51 |
Optical signatures of dopants in GaN
|
Monemar, B.
|
|
2006
|
9 |
1-3 |
p. 168-174
7 p.
|
artikel
|
| 52 |
Origin of the fluctuations in the luminescence emission in InGaN quantum wells
|
Martínez, O.
|
|
2006
|
9 |
1-3 |
p. 2-7
6 p.
|
artikel
|
| 53 |
Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process
|
Sun, Shilong
|
|
2006
|
9 |
1-3 |
p. 78-81
4 p.
|
artikel
|
| 54 |
Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal
|
Hao, Qiuyan
|
|
2006
|
9 |
1-3 |
p. 88-91
4 p.
|
artikel
|
| 55 |
Photoelastic characterization of residual stress in GaAs-wafers
|
Geiler, H.D.
|
|
2006
|
9 |
1-3 |
p. 345-350
6 p.
|
artikel
|
| 56 |
Photoelastic characterization on multicrystalline silicon substrates for solar cell
|
Fukuzawa, M.
|
|
2006
|
9 |
1-3 |
p. 266-269
4 p.
|
artikel
|
| 57 |
Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers
|
Sugimoto, H.
|
|
2006
|
9 |
1-3 |
p. 102-106
5 p.
|
artikel
|
| 58 |
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
|
Zhou, H.Y.
|
|
2006
|
9 |
1-3 |
p. 337-340
4 p.
|
artikel
|
| 59 |
Properties of dislocation networks formed by Si wafer direct bonding
|
Yu, X.
|
|
2006
|
9 |
1-3 |
p. 96-101
6 p.
|
artikel
|
| 60 |
Quick mapping of carrier concentration in InP substrate with large diameter by near-infrared transmittance measurement
|
Kawase, Tomohiro
|
|
2006
|
9 |
1-3 |
p. 362-365
4 p.
|
artikel
|
| 61 |
Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons
|
Takakura, K.
|
|
2006
|
9 |
1-3 |
p. 292-295
4 p.
|
artikel
|
| 62 |
Raman scattering study on vibrational modes in Ga1− x Mn x N prepared by Mn-ion implantation
|
Islam, M.R.
|
|
2006
|
9 |
1-3 |
p. 184-187
4 p.
|
artikel
|
| 63 |
Recombination activity of nickel in Czochralski silicon during rapid thermal process
|
Wang, Weiyan
|
|
2006
|
9 |
1-3 |
p. 296-299
4 p.
|
artikel
|
| 64 |
Recombination behavior of nickel in cast multicrystalline silicon
|
Xi, Zhenqiang
|
|
2006
|
9 |
1-3 |
p. 304-307
4 p.
|
artikel
|
| 65 |
Recombination lifetime characterization and mapping of silicon wafers and detectors using the microwave photoconductivity decay (μPCD) technique
|
Härkönen, J.
|
|
2006
|
9 |
1-3 |
p. 261-265
5 p.
|
artikel
|
| 66 |
Role of deep traps in carrier generation and transport in differently doped InP wafers
|
Sun, N.
|
|
2006
|
9 |
1-3 |
p. 390-393
4 p.
|
artikel
|
| 67 |
Scanning techniques applied to the characterisation of P and N type multicrystalline silicon
|
Martinuzzi, S.
|
|
2006
|
9 |
1-3 |
p. 230-235
6 p.
|
artikel
|
| 68 |
Self-assembled zno colloidal photonic crystals: Light channels in cracks
|
Juan, Xie
|
|
2006
|
9 |
1-3 |
p. 136-140
5 p.
|
artikel
|
| 69 |
Sensitivity of Makyoh topography
|
Riesz, Ferenc
|
|
2006
|
9 |
1-3 |
p. 220-224
5 p.
|
artikel
|
| 70 |
Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
|
Kirste, L.
|
|
2006
|
9 |
1-3 |
p. 8-14
7 p.
|
artikel
|
| 71 |
Stability of microcrystalline silicon materials under light soaking
|
Han, Xiaoyan
|
|
2006
|
9 |
1-3 |
p. 300-303
4 p.
|
artikel
|
| 72 |
Strain relaxation and defect creation in diode laser bars
|
Tomm, Jens W.
|
|
2006
|
9 |
1-3 |
p. 215-219
5 p.
|
artikel
|
| 73 |
Structure and visible luminescence of ZnO nanoparticles
|
Peng, W.Q.
|
|
2006
|
9 |
1-3 |
p. 156-159
4 p.
|
artikel
|
| 74 |
Study of lead iodide semiconductor crystals doped with silver
|
Matuchova, M.
|
|
2006
|
9 |
1-3 |
p. 394-398
5 p.
|
artikel
|
| 75 |
Study of structure and magnetic properties of Ni-doped ZnO-based DMSs
|
Li, B.B.
|
|
2006
|
9 |
1-3 |
p. 141-145
5 p.
|
artikel
|
| 76 |
Study the effects of nitrogen annealing on oxygen precipitation in fast neutron-irradiated Czochralski silicon
|
Lili, Liu
|
|
2006
|
9 |
1-3 |
p. 107-109
3 p.
|
artikel
|
| 77 |
Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films
|
Dudley, M.
|
|
2006
|
9 |
1-3 |
p. 315-322
8 p.
|
artikel
|
| 78 |
Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping
|
Huang, Xinming
|
|
2006
|
9 |
1-3 |
p. 257-260
4 p.
|
artikel
|
| 79 |
The cell structures in the large diameter semi-insulating gallium arsenide single crystal
|
Sun, Weizhong
|
|
2006
|
9 |
1-3 |
p. 399-402
4 p.
|
artikel
|
| 80 |
The different behaviour of CiOi and CiCs defects in SiGe
|
Tan, J.
|
|
2006
|
9 |
1-3 |
p. 58-61
4 p.
|
artikel
|
| 81 |
The effect of dislocations in Cd0.96Zn0.04Te single crystal on IR transmittance
|
Zha, Gangqiang
|
|
2006
|
9 |
1-3 |
p. 160-163
4 p.
|
artikel
|
| 82 |
The optical energy gap dependence on both carrier concentration and intrinsic energy gap in n-type semiconductors
|
Omar, M.S.
|
|
2006
|
9 |
1-3 |
p. 164-167
4 p.
|
artikel
|
| 83 |
Theoretical study of phase separation in wurtzite InGaN
|
Zheng, Jianghai
|
|
2006
|
9 |
1-3 |
p. 341-344
4 p.
|
artikel
|
| 84 |
Thermoreflectance study of facet heating in semiconductor lasers
|
Bugajski, Maciej
|
|
2006
|
9 |
1-3 |
p. 188-197
10 p.
|
artikel
|
| 85 |
The structural damage and defects induced by femtosecond laser pulse in ZnSe single crystals
|
Li, Huanyong
|
|
2006
|
9 |
1-3 |
p. 151-155
5 p.
|
artikel
|
| 86 |
The surface topography of GaN grown on Si (111) substrate before and after wet chemical etching
|
Zhao, Liwei
|
|
2006
|
9 |
1-3 |
p. 403-406
4 p.
|
artikel
|
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