| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
|
Cabello, Maria
|
|
|
78 |
C |
p. 22-31
|
artikel
|
| 2 |
A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy
|
El-zammar, Georgio
|
|
|
78 |
C |
p. 107-110
|
artikel
|
| 3 |
Current status and perspectives of ultrahigh-voltage SiC power devices
|
Kimoto, T.
|
|
|
78 |
C |
p. 43-56
|
artikel
|
| 4 |
Defects related to electrical doping of 4H-SiC by ion implantation
|
Nipoti, Roberta
|
|
|
78 |
C |
p. 13-21
|
artikel
|
| 5 |
Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
|
Gammon, P.M.
|
|
|
78 |
C |
p. 69-74
|
artikel
|
| 6 |
Editorial
|
Roccaforte, Fabrizio
|
|
|
78 |
C |
p. 1
|
artikel
|
| 7 |
Editorial Board
|
|
|
|
78 |
C |
p. ii
|
artikel
|
| 8 |
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation
|
Chini, Alessandro
|
|
|
78 |
C |
p. 127-131
|
artikel
|
| 9 |
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
|
La Via, F.
|
|
|
78 |
C |
p. 57-68
|
artikel
|
| 10 |
Materials and processing issues in vertical GaN power electronics
|
Hu, Jie
|
|
|
78 |
C |
p. 75-84
|
artikel
|
| 11 |
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
|
Spera, Monia
|
|
|
78 |
C |
p. 111-117
|
artikel
|
| 12 |
Recent advances in diamond power semiconductor devices
|
Umezawa, Hitoshi
|
|
|
78 |
C |
p. 147-156
|
artikel
|
| 13 |
Recent advances in 4H-SiC epitaxy for high-voltage power devices
|
Tsuchida, Hidekazu
|
|
|
78 |
C |
p. 2-12
|
artikel
|
| 14 |
Recent progress in the growth of β-Ga2O3 for power electronics applications
|
Baldini, Michele
|
|
|
78 |
C |
p. 132-146
|
artikel
|
| 15 |
Review of technology for normally-off HEMTs with p-GaN gate
|
Greco, Giuseppe
|
|
|
78 |
C |
p. 96-106
|
artikel
|
| 16 |
SiC MOSFET threshold-stability issues
|
Lelis, Aivars J.
|
|
|
78 |
C |
p. 32-37
|
artikel
|
| 17 |
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
|
Hashizume, Tamotsu
|
|
|
78 |
C |
p. 85-95
|
artikel
|
| 18 |
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
|
Fiorenza, Patrick
|
|
|
78 |
C |
p. 38-42
|
artikel
|
| 19 |
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
|
Meneghini, Matteo
|
|
|
78 |
C |
p. 118-126
|
artikel
|
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