| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Effect of growth temperature on diode parameters of n-ZnO/p-Si heterojuction diodes grown by atomic layer deposition
|
Sahu, V.K.
|
|
2016
|
54 |
C |
p. 1-5
5 p.
|
artikel
|
| 2 |
Effect of Se content on the structural, morphological and optical properties of Bi2Te3−ySey thin films electrodeposited by under potential deposition technique
|
Şişman, İlkay
|
|
2016
|
54 |
C |
p. 57-64
8 p.
|
artikel
|
| 3 |
Fabrication and electrical characterization of Al/p-ZnIn2Se4 thin film Schottky diode structure
|
Dhruv, D.K.
|
|
2016
|
54 |
C |
p. 29-35
7 p.
|
artikel
|
| 4 |
Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4
|
Li, Yaqiong
|
|
2016
|
54 |
C |
p. 20-28
9 p.
|
artikel
|
| 5 |
Improved electrodeposition of CdS layers in presence of activating H2SeO3 microadditive
|
Maricheva, J.
|
|
2016
|
54 |
C |
p. 14-19
6 p.
|
artikel
|
| 6 |
Investigation on the atomic layer deposition of the Se doped Sb–Te phase change films using an alkyl-silyl precursor
|
Jeong, Jin Hwan
|
|
2016
|
54 |
C |
p. 42-50
9 p.
|
artikel
|
| 7 |
Mg and Al co-doping of ZnO thin films: Effect on ultraviolet photoconductivity
|
Das, Arpita
|
|
2016
|
54 |
C |
p. 36-41
6 p.
|
artikel
|
| 8 |
Nucleation mechanism for epitaxial growth of aluminum films on sapphire substrates by molecular beam epitaxy
|
Zhu, Yunnong
|
|
2016
|
54 |
C |
p. 70-76
7 p.
|
artikel
|
| 9 |
Se doping of silicon with Si/Se bilayer films prepared by femtosecond-laser irradiation
|
Du, Lingyan
|
|
2016
|
54 |
C |
p. 51-56
6 p.
|
artikel
|
| 10 |
Stable resistive switching characteristics of Ce:HfOx film induced by annealing process
|
Guo, Tingting
|
|
2016
|
54 |
C |
p. 65-69
5 p.
|
artikel
|
| 11 |
Study of sensitivity and selectivity of α-Fe2O3 thin films for different toxic gases and alcohols
|
Zolghadr, S.
|
|
2016
|
54 |
C |
p. 6-13
8 p.
|
artikel
|
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