| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adverts-6
|
|
|
2001
|
4 |
6 |
p. IX-XII
nvt p.
|
artikel
|
| 2 |
Applications and processing of SiGe and SiGe:C for high-speed HBT devices
|
Meyer, D.J.
|
|
2001
|
4 |
6 |
p. 529-533
5 p.
|
artikel
|
| 3 |
Author index-auto generate
|
|
|
2001
|
4 |
6 |
p. I-III
nvt p.
|
artikel
|
| 4 |
Characterization of GaN films etched using reactive ion etching technique by secondary ion mass spectrometry
|
Naoi, Y.
|
|
2001
|
4 |
6 |
p. 555-558
4 p.
|
artikel
|
| 5 |
Crystal growth of aluminum nitride under high pressure of nitrogen
|
Boćkowski, M.
|
|
2001
|
4 |
6 |
p. 543-548
6 p.
|
artikel
|
| 6 |
Dependence of electrical and optical properties of ZnO films on substrate temperature
|
Xu, X.L.
|
|
2001
|
4 |
6 |
p. 617-620
4 p.
|
artikel
|
| 7 |
Detailed structural analysis of semiconductors with X-ray scattering
|
Fewster, Paul F.
|
|
2001
|
4 |
6 |
p. 475-481
7 p.
|
artikel
|
| 8 |
Dielectric tunable properties of (Ba1−x Sr x)TiO3 thin films on LaAlO3 substrate
|
Wu, Wenbiao
|
|
2001
|
4 |
6 |
p. 673-678
6 p.
|
artikel
|
| 9 |
Dislocation scattering in n-GaN
|
Choi, H.W.
|
|
2001
|
4 |
6 |
p. 567-570
4 p.
|
artikel
|
| 10 |
DLTS characterisation of InGaAlP films grown using different V/III ratios
|
Lim, H.F.
|
|
2001
|
4 |
6 |
p. 625-629
5 p.
|
artikel
|
| 11 |
Effect of H+ implantation on the structural properties of GaN
|
Senthil Kumar, M.
|
|
2001
|
4 |
6 |
p. 585-589
5 p.
|
artikel
|
| 12 |
Electroluminescence from Au/Si/SiO2/p-Si structure
|
Ma, S.Y.
|
|
2001
|
4 |
6 |
p. 661-663
3 p.
|
artikel
|
| 13 |
Electronic structure of GaAs1−x N x alloys
|
Tzu-Lin Lim, Adele
|
|
2001
|
4 |
6 |
p. 577-580
4 p.
|
artikel
|
| 14 |
GaAs-based materials for heterojunction bipolar transistor's: reliability results and MMIC applications
|
di Forte-Poisson, M.A.
|
|
2001
|
4 |
6 |
p. 503-511
9 p.
|
artikel
|
| 15 |
GaN-based optoelectronic devices on sapphire and Si substrates
|
Umeno, Masayoshi
|
|
2001
|
4 |
6 |
p. 459-466
8 p.
|
artikel
|
| 16 |
High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates
|
Xiong, Yong Zhong
|
|
2001
|
4 |
6 |
p. 647-649
3 p.
|
artikel
|
| 17 |
High-resolution X-ray diffraction study of strained InGaAsP/InP multiple quantum well structures grown using all solid sources
|
Sun, L.
|
|
2001
|
4 |
6 |
p. 631-636
6 p.
|
artikel
|
| 18 |
Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
|
Teng, J.H.
|
|
2001
|
4 |
6 |
p. 621-624
4 p.
|
artikel
|
| 19 |
Influence of doping on the dynamical properties of III–V–N by Raman scattering, infrared absorption and model calculations
|
Talwar, Devki N.
|
|
2001
|
4 |
6 |
p. 513-520
8 p.
|
artikel
|
| 20 |
Influence of iron concentration on its structural position in KNbO3 lattice
|
Cherney, N.V.
|
|
2001
|
4 |
6 |
p. 669-672
4 p.
|
artikel
|
| 21 |
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
|
Feng, Z.C.
|
|
2001
|
4 |
6 |
p. 571-576
6 p.
|
artikel
|
| 22 |
InP quantum dots in (100) GaP: Growth and luminescence
|
Masselink, W.T.
|
|
2001
|
4 |
6 |
p. 497-501
5 p.
|
artikel
|
| 23 |
Lift-off and re-growth of ZnSSe epilayer
|
Lee, Ming-Kwei
|
|
2001
|
4 |
6 |
p. 607-610
4 p.
|
artikel
|
| 24 |
LiInS2: A new nonlinear crystal for the mid-IR
|
Isaenko, L.
|
|
2001
|
4 |
6 |
p. 665-668
4 p.
|
artikel
|
| 25 |
Local vibrational modes in Gamma-irradiated GaN grown by metal-organic chemical vapor deposition
|
Sun, W.H.
|
|
2001
|
4 |
6 |
p. 559-562
4 p.
|
artikel
|
| 26 |
Materials and technology issues for SiGe heterojunction bipolar transistors
|
Ashburn, Peter
|
|
2001
|
4 |
6 |
p. 521-527
7 p.
|
artikel
|
| 27 |
Materials engineering of advanced device structures by heteroepitaxy of large misfit systems
|
Ploog, Klaus H.
|
|
2001
|
4 |
6 |
p. 451-457
7 p.
|
artikel
|
| 28 |
MBE-grown ZnSSe thin films on ITO substrates for liquid-crystal light valve applications
|
Shen, D.
|
|
2001
|
4 |
6 |
p. 611-616
6 p.
|
artikel
|
| 29 |
MOCVD technology in research, development and mass production
|
Juergensen, H.
|
|
2001
|
4 |
6 |
p. 467-474
8 p.
|
artikel
|
| 30 |
[No title]
|
Ramam, Akkipeddi
|
|
2001
|
4 |
6 |
p. 449-
1 p.
|
artikel
|
| 31 |
Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with In x Ga1−x P graded buffer layers
|
Yuan, K.
|
|
2001
|
4 |
6 |
p. 641-645
5 p.
|
artikel
|
| 32 |
Observation of compensation in GaN films grown by metalorganic chemical vapor deposition
|
Chen, P.
|
|
2001
|
4 |
6 |
p. 591-594
4 p.
|
artikel
|
| 33 |
Optical characterization of as-prepared and rapid thermal oxidized partially strain compensated Si1−x−y Ge x C y films
|
Feng, W.
|
|
2001
|
4 |
6 |
p. 655-659
5 p.
|
artikel
|
| 34 |
Optimization of compositionally graded In x Ga1−x P metamorphic buffer layers grown by solid source molecular beam epitaxy
|
Yuan, K
|
|
2001
|
4 |
6 |
p. 637-640
4 p.
|
artikel
|
| 35 |
Photoluminescence of AlGaAs alloy grown by LP-MOVPE at different temperatures using TBA in N2 ambient
|
Tang, X.H.
|
|
2001
|
4 |
6 |
p. 651-654
4 p.
|
artikel
|
| 36 |
Preparation and characterization of oriented III–V nitride thin films by nebulized spray pyrolysis
|
Raju, A.R.
|
|
2001
|
4 |
6 |
p. 549-553
5 p.
|
artikel
|
| 37 |
Raman scattering study of a GaAsN epitaxial layer
|
Yu, G.Y.
|
|
2001
|
4 |
6 |
p. 581-584
4 p.
|
artikel
|
| 38 |
Recent developments in spectroscopy of quantum structures
|
Arora, B.M.
|
|
2001
|
4 |
6 |
p. 489-495
7 p.
|
artikel
|
| 39 |
Screw and edge dislocations-induced internal strain around micropipes of 6H-SiC single crystals
|
Ohsato, H.
|
|
2001
|
4 |
6 |
p. 483-487
5 p.
|
artikel
|
| 40 |
Seeded growth of GaN at high N2 pressure on (0001) polar surfaces of GaN single crystalline substrates
|
Grzegory, I.
|
|
2001
|
4 |
6 |
p. 535-541
7 p.
|
artikel
|
| 41 |
Study of electrically active defects in n-GaN layer
|
Soh, C.B.
|
|
2001
|
4 |
6 |
p. 595-600
6 p.
|
artikel
|
| 42 |
Subject index-auto generate
|
|
|
2001
|
4 |
6 |
p. V-VII
nvt p.
|
artikel
|
| 43 |
Utilization of optical and electrical peculiarities of partially compensated zinc selenide
|
Prokesch, M.
|
|
2001
|
4 |
6 |
p. 601-605
5 p.
|
artikel
|
| 44 |
Valence band structures and optical transitions of Ga1−x In x N yAs1−y/GaAs compressively strained quantum wells
|
Fan, W.J.
|
|
2001
|
4 |
6 |
p. 563-566
4 p.
|
artikel
|
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