| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
|
Schroer, E
|
|
2000
|
3 |
4 |
p. 303-309
7 p.
|
artikel
|
| 2 |
Contents list
|
|
|
2000
|
3 |
4 |
p. 327-328
2 p.
|
artikel
|
| 3 |
Defect kinetics in novel detector materials
|
MacEvoy, B.C
|
|
2000
|
3 |
4 |
p. 243-249
7 p.
|
artikel
|
| 4 |
High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon
|
Evans-Freeman, J.H
|
|
2000
|
3 |
4 |
p. 237-241
5 p.
|
artikel
|
| 5 |
Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions
|
Whelan, S
|
|
2000
|
3 |
4 |
p. 285-290
6 p.
|
artikel
|
| 6 |
Intrinsic defects in silicon
|
Watkins, George D.
|
|
2000
|
3 |
4 |
p. 227-235
9 p.
|
artikel
|
| 7 |
Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon
|
Peeva, A
|
|
2000
|
3 |
4 |
p. 297-301
5 p.
|
artikel
|
| 8 |
Patent report
|
|
|
2000
|
3 |
4 |
p. 325-326
2 p.
|
artikel
|
| 9 |
Precipitation of Sn in metastable, pseudomorphic Si0.95Sn0.05 films grown by molecular beam epitaxy
|
Ridder, C
|
|
2000
|
3 |
4 |
p. 251-255
5 p.
|
artikel
|
| 10 |
Prediction of the morphology of the as-implanted damage in silicon using a novel combination of BCA and MD simulations
|
Posselt, Matthias
|
|
2000
|
3 |
4 |
p. 317-323
7 p.
|
artikel
|
| 11 |
Radiation effects in silicon detectors processed on carbon and oxygen-rich substrates
|
Ruzin, A
|
|
2000
|
3 |
4 |
p. 257-261
5 p.
|
artikel
|
| 12 |
Regrowth of heavy-ion implantation damage by electron beams
|
Jenčič, I
|
|
2000
|
3 |
4 |
p. 311-315
5 p.
|
artikel
|
| 13 |
Self-interstitial migration during ion irradiation of boron delta-doped silicon
|
Kuznetsov, A.Yu
|
|
2000
|
3 |
4 |
p. 279-283
5 p.
|
artikel
|
| 14 |
Silicon damage studies due to ultra-low-energy ion implantation with heavy species and rapid thermal annealing
|
Moffatt, S
|
|
2000
|
3 |
4 |
p. 291-296
6 p.
|
artikel
|
| 15 |
The impact of high-energy proton irradiation on the low-frequency 1/f noise in FZ-silicon diodes
|
Simoen, E
|
|
2000
|
3 |
4 |
p. 263-267
5 p.
|
artikel
|
| 16 |
Thermal evolution of extended defects in implanted Si:
|
Claverie, Alain
|
|
2000
|
3 |
4 |
p. 269-277
9 p.
|
artikel
|
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