| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of the effect of post-metal etch wet cleaning processes and silicon oxynitride film on charge induced corrosion of tungsten vias
|
Lee, Szetsen
|
|
2010
|
13 |
5-6 |
p. 315-319
5 p.
|
artikel
|
| 2 |
Creation of a stable and convex static meniscus, which is appropriate for the growth of a single crystal ribbon with specified half thickness
|
Balint, Stefan
|
|
2010
|
13 |
5-6 |
p. 333-338
6 p.
|
artikel
|
| 3 |
Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)
|
Chawanda, A.
|
|
2010
|
13 |
5-6 |
p. 371-375
5 p.
|
artikel
|
| 4 |
Effects of annealing technique and TiO2 seed layer on the phase composition of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 film
|
Li, W.L.
|
|
2010
|
13 |
5-6 |
p. 426-429
4 p.
|
artikel
|
| 5 |
Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures
|
Tyaginov, S.E.
|
|
2010
|
13 |
5-6 |
p. 405-410
6 p.
|
artikel
|
| 6 |
Electroluminescence of ZnSe enhanced by improved layered optimization structure
|
Jiang, W.W.
|
|
2010
|
13 |
5-6 |
p. 360-363
4 p.
|
artikel
|
| 7 |
Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing
|
Jeon, Sang-Jin
|
|
2010
|
13 |
5-6 |
p. 320-324
5 p.
|
artikel
|
| 8 |
Evidence for a conduction through shallow traps in Hf-doped Ta2O5
|
Paskaleva, A.
|
|
2010
|
13 |
5-6 |
p. 349-355
7 p.
|
artikel
|
| 9 |
Flash evaporated cadmium sulfide films
|
Murali, K.R.
|
|
2010
|
13 |
5-6 |
p. 356-359
4 p.
|
artikel
|
| 10 |
Frequency and voltage dependency of interface states and series resistance in Al/SiO2/p-Si MOS structure
|
Xiao, Hong
|
|
2010
|
13 |
5-6 |
p. 395-399
5 p.
|
artikel
|
| 11 |
Improved light extraction efficiency of GaN-based light emitting diodes using one and two interfaces of ITO/ZnO layer texturing
|
Uthirakumar, Periyayya
|
|
2010
|
13 |
5-6 |
p. 329-332
4 p.
|
artikel
|
| 12 |
Influence of annealing temperature on field emission from tetrapod-shaped ZnO-whisker films obtained by screen printing
|
Fan, X.M.
|
|
2010
|
13 |
5-6 |
p. 400-404
5 p.
|
artikel
|
| 13 |
Influence of oxygen flow rate on microstructural, electrical and optical properties of indium tin tantalum oxide films
|
Zhang, Bo
|
|
2010
|
13 |
5-6 |
p. 411-416
6 p.
|
artikel
|
| 14 |
Low temperature TiO2 rutile phase thin film synthesis by chemical spray pyrolysis (CSP) of titanyl acetylacetonate
|
Moses Ezhil Raj, A.
|
|
2010
|
13 |
5-6 |
p. 389-394
6 p.
|
artikel
|
| 15 |
Nitrogen doped silicon films heavily boron implanted for MOS structures: Simulation and characterization
|
Mahamdi, R.
|
|
2010
|
13 |
5-6 |
p. 383-388
6 p.
|
artikel
|
| 16 |
Region-dependent behavior of I–V characteristics in n-ZnO:Al/p-Si contacts
|
Shen, L.
|
|
2010
|
13 |
5-6 |
p. 339-343
5 p.
|
artikel
|
| 17 |
Sm2O3 gate dielectric on Si substrate
|
Chin, Wen Chiao
|
|
2010
|
13 |
5-6 |
p. 303-314
12 p.
|
artikel
|
| 18 |
Synthesis of ZnO and Fe2O3 nanoparticles by sol–gel method and their application in dye-sensitized solar cells
|
Reda, S.M.
|
|
2010
|
13 |
5-6 |
p. 417-425
9 p.
|
artikel
|
| 19 |
Systematic defect improvement integration of dual damascene processes development on nano semiconductor fabrication
|
Weng, Chun-Jen
|
|
2010
|
13 |
5-6 |
p. 376-382
7 p.
|
artikel
|
| 20 |
TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer
|
Al-Sa'di, Mahmoud
|
|
2010
|
13 |
5-6 |
p. 344-348
5 p.
|
artikel
|
| 21 |
Thermal oxidation of tin layers and study of the effect of their annealings on their structural and electrical properties
|
Laghrib, Souad
|
|
2010
|
13 |
5-6 |
p. 364-370
7 p.
|
artikel
|
| 22 |
Vibrational and morphological properties of Sn-doped CdS films deposited by ultrasonic spray pyrolysis method
|
Özer, Tülay
|
|
2010
|
13 |
5-6 |
p. 325-328
4 p.
|
artikel
|
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