| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Changing from rapid thermal processing to rapid photothermal processing: what does it buy for a particular technology?
|
Singh, R.
|
|
1998
|
1 |
3-4 |
p. 219-230
12 p.
|
artikel
|
| 2 |
Coupled simulation of gas flow and heat transfer in an RTP-system with rotating wafer
|
Poscher, S.
|
|
1998
|
1 |
3-4 |
p. 201-205
5 p.
|
artikel
|
| 3 |
Deposition and crystallization of a-Si thin films by rapid thermal processing
|
Girginoudi, S
|
|
1998
|
1 |
3-4 |
p. 287-292
6 p.
|
artikel
|
| 4 |
Dopant diffusion studies and free carrier lifetimes during rapid thermal processing of semiconductors
|
Nagabushnam, Rajan V.
|
|
1998
|
1 |
3-4 |
p. 207-218
12 p.
|
artikel
|
| 5 |
Editorial
|
|
|
1998
|
1 |
3-4 |
p. 167-
1 p.
|
artikel
|
| 6 |
Effect of stress on silicide formation kinetics in thin film titanium–selicon system
|
Nagabushnam, Rajan V
|
|
1998
|
1 |
3-4 |
p. 249-255
7 p.
|
artikel
|
| 7 |
Epitaxial growth of SiGe layers for BiCMOS applications
|
Regolini, J.L.
|
|
1998
|
1 |
3-4 |
p. 317-323
7 p.
|
artikel
|
| 8 |
Formation of contacts to shallow junctions using titanium silicide with diffusion barriers
|
Zagozdzon-Wosik, W
|
|
1998
|
1 |
3-4 |
p. 243-247
5 p.
|
artikel
|
| 9 |
Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films
|
Kallel, S
|
|
1998
|
1 |
3-4 |
p. 299-302
4 p.
|
artikel
|
| 10 |
Influence of vapor phase pre-oxide-cleaning on the oxidation characteristics
|
Froeschle, B
|
|
1998
|
1 |
3-4 |
p. 271-274
4 p.
|
artikel
|
| 11 |
Modelling and off-line optimization of a 300 mm rapid thermal processing system
|
Tillmann, A
|
|
1998
|
1 |
3-4 |
p. 181-186
6 p.
|
artikel
|
| 12 |
New methods of metrology data analysis during semiconductor processing and application to rapid thermal processing
|
Boin, Manuela
|
|
1998
|
1 |
3-4 |
p. 195-200
6 p.
|
artikel
|
| 13 |
Patent report
|
|
|
1998
|
1 |
3-4 |
p. 343-350
8 p.
|
artikel
|
| 14 |
Perspectives on emissivity measurements and modeling in silicon
|
Abedrabbo, S.
|
|
1998
|
1 |
3-4 |
p. 187-193
7 p.
|
artikel
|
| 15 |
Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing
|
Mathiot, D.
|
|
1998
|
1 |
3-4 |
p. 231-236
6 p.
|
artikel
|
| 16 |
Rapid thermal annealing applied to the optimization of titanium oxide arc
|
Lemiti, M.
|
|
1998
|
1 |
3-4 |
p. 331-334
4 p.
|
artikel
|
| 17 |
Rapid thermal annealing of Zr/SiGeC contacts
|
Barthula, M
|
|
1998
|
1 |
3-4 |
p. 263-266
4 p.
|
artikel
|
| 18 |
Rapid thermal magnetic annealing as an emerging technology in field-annealing of thin magnetic films for recording heads
|
Roozeboom, F.
|
|
1998
|
1 |
3-4 |
p. 303-315
13 p.
|
artikel
|
| 19 |
Rapid thermal oxidation of highly in situ phosphorus doped polysilicon thin films
|
Kallel, S
|
|
1998
|
1 |
3-4 |
p. 275-279
5 p.
|
artikel
|
| 20 |
Rapid thermal oxidation of porous silicon for surface passivation
|
Debarge, L
|
|
1998
|
1 |
3-4 |
p. 281-285
5 p.
|
artikel
|
| 21 |
Rapid thermal processing technology for the 21st century
|
Timans, P.J.
|
|
1998
|
1 |
3-4 |
p. 169-179
11 p.
|
artikel
|
| 22 |
Selective doping of silicon by rapid thermal and laser assisted processes
|
Besi-Vetrella, U
|
|
1998
|
1 |
3-4 |
p. 325-329
5 p.
|
artikel
|
| 23 |
Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1−x Ge x /Si heterostructure
|
Miron, Y
|
|
1998
|
1 |
3-4 |
p. 257-261
5 p.
|
artikel
|
| 24 |
The initial stages of Si thin deposits on foreign substrates in a rapid thermal chemical vapor phase reactor
|
Angermeier, D.
|
|
1998
|
1 |
3-4 |
p. 293-297
5 p.
|
artikel
|
| 25 |
Ultra high temperature rapid thermal annealing of GaN
|
Cao, X.A
|
|
1998
|
1 |
3-4 |
p. 267-270
4 p.
|
artikel
|
| 26 |
Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate
|
Agarwal, Aditya
|
|
1998
|
1 |
3-4 |
p. 237-241
5 p.
|
artikel
|
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