| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio investigation of phosphorus and boron diffusion in germanium
|
Janke, C.
|
|
2008
|
|
5-6 |
p. 324-327
4 p.
|
artikel
|
| 2 |
Ab-initio simulation of self-interstitial in germanium
|
Śpiewak, P.
|
|
2008
|
|
5-6 |
p. 328-331
4 p.
|
artikel
|
| 3 |
Accurate carrier profiling of n-type GaAs junctions
|
Clarysse, T.
|
|
2008
|
|
5-6 |
p. 259-266
8 p.
|
artikel
|
| 4 |
Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility
|
Hutin, Louis
|
|
2008
|
|
5-6 |
p. 267-270
4 p.
|
artikel
|
| 5 |
AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates
|
Kuno, T.
|
|
2003
|
|
5-6 |
p. 461-464
4 p.
|
artikel
|
| 6 |
Amphoteric nature of vacancies in zinc blende semiconductors
|
Chadi, D.J.
|
|
2003
|
|
5-6 |
p. 281-284
4 p.
|
artikel
|
| 7 |
A solid-state near infrared spectrum analyzer based on polycrystalline Ge on Si
|
Colace, L.
|
|
2000
|
|
5-6 |
p. 545-549
5 p.
|
artikel
|
| 8 |
A study of the effect of post-metal etch wet cleaning processes and silicon oxynitride film on charge induced corrosion of tungsten vias
|
Lee, Szetsen
|
|
2010
|
|
5-6 |
p. 315-319
5 p.
|
artikel
|
| 9 |
Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices
|
Molle, A.
|
|
2008
|
|
5-6 |
p. 236-240
5 p.
|
artikel
|
| 10 |
Author Index
|
|
|
2000
|
|
5-6 |
p. I-III
nvt p.
|
artikel
|
| 11 |
Bending properties in oxidized porous silicon waveguides
|
Balucani, M
|
|
2000
|
|
5-6 |
p. 351-355
5 p.
|
artikel
|
| 12 |
Calculation of the optimum vapor pressure for stoichiometry in PbTe and PbSnTe
|
Suto, K.
|
|
2003
|
|
5-6 |
p. 289-292
4 p.
|
artikel
|
| 13 |
Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxide
|
Fabbri, F.
|
|
2008
|
|
5-6 |
p. 179-181
3 p.
|
artikel
|
| 14 |
Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy
|
Oh, D.C
|
|
2003
|
|
5-6 |
p. 567-571
5 p.
|
artikel
|
| 15 |
Characterizations of In x Al y Ga1−x−y N alloy systems grown on GaN substrates by molecular-beam epitaxy
|
Iwata, S.
|
|
2003
|
|
5-6 |
p. 527-530
4 p.
|
artikel
|
| 16 |
Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces
|
Broqvist, Peter
|
|
2008
|
|
5-6 |
p. 226-229
4 p.
|
artikel
|
| 17 |
Compact and dynamic optical bypass-exchange switch
|
Oron, R.
|
|
2000
|
|
5-6 |
p. 455-458
4 p.
|
artikel
|
| 18 |
Comparative study of point defects induced in PbTe thin films doped with Ga by different techniques
|
Samoylov, Alexander M
|
|
2003
|
|
5-6 |
p. 481-485
5 p.
|
artikel
|
| 19 |
Comparison of p+–n junction formed by BF2 + and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics
|
Srivastava, Ajay K.
|
|
2003
|
|
5-6 |
p. 555-559
5 p.
|
artikel
|
| 20 |
Complexes of self-interstitials with oxygen atoms in germanium
|
Khirunenko, L.I.
|
|
2008
|
|
5-6 |
p. 344-347
4 p.
|
artikel
|
| 21 |
Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratios
|
Seki, N.
|
|
2003
|
|
5-6 |
p. 307-309
3 p.
|
artikel
|
| 22 |
Control of Ga doping level in β-FeSi2 using Sn–Ga solvent
|
Udono, Haruhiko
|
|
2003
|
|
5-6 |
p. 285-287
3 p.
|
artikel
|
| 23 |
Cooperative two-photon effects in chalcogenide photoresists
|
Sfez, B.G
|
|
2000
|
|
5-6 |
p. 499-504
6 p.
|
artikel
|
| 24 |
Creation of a stable and convex static meniscus, which is appropriate for the growth of a single crystal ribbon with specified half thickness
|
Balint, Stefan
|
|
2010
|
|
5-6 |
p. 333-338
6 p.
|
artikel
|
| 25 |
Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique
|
Uedono, A.
|
|
2003
|
|
5-6 |
p. 367-369
3 p.
|
artikel
|
| 26 |
Density-functional theory study of Au, Ag and Cu defects in germanium
|
Carvalho, A.
|
|
2008
|
|
5-6 |
p. 340-343
4 p.
|
artikel
|
| 27 |
Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys
|
Carvalho, A.
|
|
2008
|
|
5-6 |
p. 332-335
4 p.
|
artikel
|
| 28 |
Design and fabrication of integrated Si-based optoelectronic devices
|
Libertino, Sebania
|
|
2000
|
|
5-6 |
p. 375-381
7 p.
|
artikel
|
| 29 |
Detailed analysis of absorption data for indium nitride
|
Butcher, K.S.A.
|
|
2003
|
|
5-6 |
p. 351-354
4 p.
|
artikel
|
| 30 |
Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)
|
Chawanda, A.
|
|
2010
|
|
5-6 |
p. 371-375
5 p.
|
artikel
|
| 31 |
Development of an intelligent design tool for non-stoichiometric compound devices: an example
|
Chang, H.H.
|
|
2003
|
|
5-6 |
p. 401-407
7 p.
|
artikel
|
| 32 |
Development of a visible VCSEL-to-plastic optical fibre module for use in high-speed optical data links
|
Lambkin, J.D
|
|
2000
|
|
5-6 |
p. 467-473
7 p.
|
artikel
|
| 33 |
Device advantage of the dislocation-free pressure grown GaN substrates
|
Boćkowski, M.
|
|
2003
|
|
5-6 |
p. 347-350
4 p.
|
artikel
|
| 34 |
Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
|
Simoen, E.
|
|
2008
|
|
5-6 |
p. 364-367
4 p.
|
artikel
|
| 35 |
Diffusion and activation of phosphorus in germanium
|
Tsouroutas, P.
|
|
2008
|
|
5-6 |
p. 372-377
6 p.
|
artikel
|
| 36 |
Diffusion of nonstoichiometric defects in n-GaP crystals
|
Tanno, Takenori
|
|
2003
|
|
5-6 |
p. 441-443
3 p.
|
artikel
|
| 37 |
Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters
|
Georgakilas, A
|
|
2000
|
|
5-6 |
p. 511-515
5 p.
|
artikel
|
| 38 |
Dislocation–impurity interaction in Si
|
Yonenaga, I
|
|
2003
|
|
5-6 |
p. 355-358
4 p.
|
artikel
|
| 39 |
Dopant diffusion in GaP and related compounds: recent results and new considerations
|
Stolwijk, N.A.
|
|
2003
|
|
5-6 |
p. 315-318
4 p.
|
artikel
|
| 40 |
Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum
|
Ohno, Takeo
|
|
2003
|
|
5-6 |
p. 421-424
4 p.
|
artikel
|
| 41 |
Effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by P-MBE on c-sapphire
|
Setiawan, A.
|
|
2003
|
|
5-6 |
p. 371-374
4 p.
|
artikel
|
| 42 |
Effects of annealing technique and TiO2 seed layer on the phase composition of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 film
|
Li, W.L.
|
|
2010
|
|
5-6 |
p. 426-429
4 p.
|
artikel
|
| 43 |
Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction
|
Ohno, Takeo
|
|
2003
|
|
5-6 |
p. 417-420
4 p.
|
artikel
|
| 44 |
Effects of electron and proton irradiation on embedded SiGe source/drain diodes
|
Ohyama, H.
|
|
2008
|
|
5-6 |
p. 310-313
4 p.
|
artikel
|
| 45 |
Electrical characterization of defects introduced during metallization processes in n-type germanium
|
Auret, F.D.
|
|
2008
|
|
5-6 |
p. 348-353
6 p.
|
artikel
|
| 46 |
Electrical characterization of thiols self-assembled layers on GaP (111) structures
|
Ghita, R.V.
|
|
2008
|
|
5-6 |
p. 394-397
4 p.
|
artikel
|
| 47 |
Electrically active defects induced by hydrogen and helium implantations in Ge
|
Markevich, V.P.
|
|
2008
|
|
5-6 |
p. 354-359
6 p.
|
artikel
|
| 48 |
Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures
|
Tyaginov, S.E.
|
|
2010
|
|
5-6 |
p. 405-410
6 p.
|
artikel
|
| 49 |
Electrical passivation by hydrogen plasma treatment of transition metal impurities in germanium
|
Lauwaert, J.
|
|
2008
|
|
5-6 |
p. 360-363
4 p.
|
artikel
|
| 50 |
Electroluminescence of ZnSe enhanced by improved layered optimization structure
|
Jiang, W.W.
|
|
2010
|
|
5-6 |
p. 360-363
4 p.
|
artikel
|
| 51 |
Electronic monolithic interconnect with polyimide
|
Moliton, J.P.
|
|
2000
|
|
5-6 |
p. 419-425
7 p.
|
artikel
|
| 52 |
Elemental specificity of ion cores and ionization entropy of vacancy-group-V-impurity atom pairs in Ge crystals: ACAR and DLTS data
|
Arutyunov, N.Yu.
|
|
2008
|
|
5-6 |
p. 295-299
5 p.
|
artikel
|
| 53 |
E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS
|
Claeys, Cor
|
|
2008
|
|
5-6 |
p. 147-
1 p.
|
artikel
|
| 54 |
Energy level of minority carrier trap centers induced by light illumination in B-doped Cz-Si solar cells
|
Vu, Tuong Khanh
|
|
2003
|
|
5-6 |
p. 551-553
3 p.
|
artikel
|
| 55 |
Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing
|
Jeon, Sang-Jin
|
|
2010
|
|
5-6 |
p. 320-324
5 p.
|
artikel
|
| 56 |
Epitaxial anatase HfO2 on high-mobility substrate for ultra-scaled CMOS devices
|
Debernardi, A.
|
|
2008
|
|
5-6 |
p. 241-244
4 p.
|
artikel
|
| 57 |
Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (001), (111)A,B and (110) surfaces
|
Kochiya, Toshio
|
|
2003
|
|
5-6 |
p. 465-468
4 p.
|
artikel
|
| 58 |
Epitaxial ZnO films grown by RF-assisted low-temperature CVD method
|
Ataev, B.M.
|
|
2003
|
|
5-6 |
p. 535-537
3 p.
|
artikel
|
| 59 |
EPR studies of native and impurity-related defects in II–IV–V2 semiconductors
|
Gehlhoff, W.
|
|
2003
|
|
5-6 |
p. 379-383
5 p.
|
artikel
|
| 60 |
EPR studies of point defects in Cu-III–VI2 chalcopyrite semiconductors
|
Sato, K.
|
|
2003
|
|
5-6 |
p. 335-338
4 p.
|
artikel
|
| 61 |
ESR signature of tetra-interstitial defect in silicon
|
Mchedlidze, T.
|
|
2003
|
|
5-6 |
p. 263-266
4 p.
|
artikel
|
| 62 |
Etch pits observation and etching properties of β-FeSi2
|
Udono, Haruhiko
|
|
2003
|
|
5-6 |
p. 413-416
4 p.
|
artikel
|
| 63 |
Evidence for a conduction through shallow traps in Hf-doped Ta2O5
|
Paskaleva, A.
|
|
2010
|
|
5-6 |
p. 349-355
7 p.
|
artikel
|
| 64 |
Excimer laser fabrication of diffractive optical elements
|
Winfield, R.J.
|
|
2000
|
|
5-6 |
p. 481-486
6 p.
|
artikel
|
| 65 |
Excitation photocapacitance study of EL2 in n-GaAs and its relation to non-stoichiometry
|
Oyama, Yutaka
|
|
2003
|
|
5-6 |
p. 297-301
5 p.
|
artikel
|
| 66 |
Experiments for 3-D structuring of thick resists by gray tone lithography
|
Dumbravescu, N.
|
|
2000
|
|
5-6 |
p. 569-573
5 p.
|
artikel
|
| 67 |
Fabrication of low-threshold red VCSELs
|
Calvert, T.M
|
|
2000
|
|
5-6 |
p. 517-521
5 p.
|
artikel
|
| 68 |
Ferroelectric-domain-inverted gratings by electron beam on LiNbO3
|
Restoin, C
|
|
2000
|
|
5-6 |
p. 405-407
3 p.
|
artikel
|
| 69 |
Flash evaporated cadmium sulfide films
|
Murali, K.R.
|
|
2010
|
|
5-6 |
p. 356-359
4 p.
|
artikel
|
| 70 |
Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3
|
Ofuchi, H.
|
|
2003
|
|
5-6 |
p. 469-472
4 p.
|
artikel
|
| 71 |
Frequency and voltage dependency of interface states and series resistance in Al/SiO2/p-Si MOS structure
|
Xiao, Hong
|
|
2010
|
|
5-6 |
p. 395-399
5 p.
|
artikel
|
| 72 |
Germanium on sapphire substrates for system on a chip
|
Gamble, H.S.
|
|
2008
|
|
5-6 |
p. 195-198
4 p.
|
artikel
|
| 73 |
Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy
|
Nishizawa, Jun-ichi
|
|
2003
|
|
5-6 |
p. 429-431
3 p.
|
artikel
|
| 74 |
Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy
|
Oga, Ryo
|
|
2003
|
|
5-6 |
p. 477-480
4 p.
|
artikel
|
| 75 |
High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density
|
Poyai, A.
|
|
2008
|
|
5-6 |
p. 319-323
5 p.
|
artikel
|
| 76 |
High-energy photoemission spectroscopy of ferromagnetic Ga1−x Mn x N
|
Kim, J.J.
|
|
2003
|
|
5-6 |
p. 503-506
4 p.
|
artikel
|
| 77 |
High-quality NiGe/Ge diodes for Schottky barrier MOSFETs
|
Husain, M.K.
|
|
2008
|
|
5-6 |
p. 305-309
5 p.
|
artikel
|
| 78 |
High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFETs on plastic substrates and GaN epilayers
|
Nozaki, S.
|
|
2008
|
|
5-6 |
p. 384-389
6 p.
|
artikel
|
| 79 |
Hybridisation of LEDs with silicon microsensors
|
Cristea, Dana
|
|
2000
|
|
5-6 |
p. 563-568
6 p.
|
artikel
|
| 80 |
Impact of the SiGe/Si interface structure upon the low temperature photoluminescence of a Si/Si1−x Ge x multiple quantum well
|
Sidiki, T.P
|
|
2000
|
|
5-6 |
p. 389-393
5 p.
|
artikel
|
| 81 |
Improved light extraction efficiency of GaN-based light emitting diodes using one and two interfaces of ITO/ZnO layer texturing
|
Uthirakumar, Periyayya
|
|
2010
|
|
5-6 |
p. 329-332
4 p.
|
artikel
|
| 82 |
InAlGaAs bulk micromachined tunable Fabry–Pérot filter for dense WDM systems
|
Pfeiffer, J
|
|
2000
|
|
5-6 |
p. 409-412
4 p.
|
artikel
|
| 83 |
Increase of GaP green LED efficiency with pre-annealing of the substrate
|
Tanno, Takenori
|
|
2003
|
|
5-6 |
p. 433-435
3 p.
|
artikel
|
| 84 |
Influence of annealing temperature on field emission from tetrapod-shaped ZnO-whisker films obtained by screen printing
|
Fan, X.M.
|
|
2010
|
|
5-6 |
p. 400-404
5 p.
|
artikel
|
| 85 |
Influence of oxygen flow rate on microstructural, electrical and optical properties of indium tin tantalum oxide films
|
Zhang, Bo
|
|
2010
|
|
5-6 |
p. 411-416
6 p.
|
artikel
|
| 86 |
Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams
|
Afanas’ev, V.V.
|
|
2008
|
|
5-6 |
p. 230-235
6 p.
|
artikel
|
| 87 |
Influence of pinning trap in Ti/4H–SiC Schottky barrier diode
|
Ohtsuka, K.
|
|
2003
|
|
5-6 |
p. 359-362
4 p.
|
artikel
|
| 88 |
Influence of the pre-treatment anneal on Co–germanide Schottky contacts
|
Lajaunie, L.
|
|
2008
|
|
5-6 |
p. 300-304
5 p.
|
artikel
|
| 89 |
Integrated optics based on organo-mineral materials
|
Coudray, P
|
|
2000
|
|
5-6 |
p. 331-337
7 p.
|
artikel
|
| 90 |
Integration of optical interconnects and optoelectronic elements on wafer-scale
|
Dannberg, P.
|
|
2000
|
|
5-6 |
p. 437-441
5 p.
|
artikel
|
| 91 |
Interaction of electrical active intrinsic defects in Sn-doping Bi2Te3
|
Zhitinskaya, M.K.
|
|
2003
|
|
5-6 |
p. 449-452
4 p.
|
artikel
|
| 92 |
Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon
|
Tokuda, Yutaka
|
|
2003
|
|
5-6 |
p. 277-279
3 p.
|
artikel
|
| 93 |
Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition
|
Cammilleri, V.D.
|
|
2008
|
|
5-6 |
p. 214-216
3 p.
|
artikel
|
| 94 |
Lifetime control by Fe doping in n-type silicon
|
Nishizawa, J.
|
|
2003
|
|
5-6 |
p. 273-275
3 p.
|
artikel
|
| 95 |
Local crystal structural modifications in pulsed laser deposited high-k dielectric thin films on silicon and germanium
|
Alper Sahiner, Mehmet
|
|
2008
|
|
5-6 |
p. 245-249
5 p.
|
artikel
|
| 96 |
Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy
|
Ogawa, K.
|
|
2003
|
|
5-6 |
p. 425-427
3 p.
|
artikel
|
| 97 |
Low dielectric constant porous silica films formed by photo-induced sol–gel processing
|
Zhang, Jun-Ying
|
|
2000
|
|
5-6 |
p. 345-349
5 p.
|
artikel
|
| 98 |
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
|
Leung, B.H.
|
|
2003
|
|
5-6 |
p. 523-525
3 p.
|
artikel
|
| 99 |
Low power, GHz class ADC for broadband applications
|
Tauqeer, T.
|
|
2008
|
|
5-6 |
p. 402-406
5 p.
|
artikel
|
| 100 |
Low-stress hybridisation of emitters, detectors and driver circuitry on a silicon motherboard for optoelectronic interconnect architecture
|
Corbett, B
|
|
2000
|
|
5-6 |
p. 449-453
5 p.
|
artikel
|
| 101 |
Low-temperature deposition of SiO2 films using plasma-enhanced oxygen with reduction of oxygen-originated damage
|
Nishizawa, Jun-ichi
|
|
2003
|
|
5-6 |
p. 363-366
4 p.
|
artikel
|
| 102 |
Low-temperature growth of nitrogen-doped BeTe and ZnSe/BeTe:N superlattices for delta doping
|
Kojima, K.
|
|
2003
|
|
5-6 |
p. 511-514
4 p.
|
artikel
|
| 103 |
Low temperature TiO2 rutile phase thin film synthesis by chemical spray pyrolysis (CSP) of titanyl acetylacetonate
|
Moses Ezhil Raj, A.
|
|
2010
|
|
5-6 |
p. 389-394
6 p.
|
artikel
|
| 104 |
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
|
Duteil, F
|
|
2000
|
|
5-6 |
p. 523-528
6 p.
|
artikel
|
| 105 |
Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon
|
Asli, N.
|
|
2000
|
|
5-6 |
p. 539-543
5 p.
|
artikel
|
| 106 |
Luminescent properties of ZnCdSe/ZnMnSe superlattices
|
Fujita, Atsuki
|
|
2003
|
|
5-6 |
p. 457-460
4 p.
|
artikel
|
| 107 |
Material and process considerations for terahertz planar nanodevices
|
Lu, X.F.
|
|
2008
|
|
5-6 |
p. 407-410
4 p.
|
artikel
|
| 108 |
Materials for the recording of thin holographic grating couplers
|
Weiss, Victor
|
|
2000
|
|
5-6 |
p. 413-418
6 p.
|
artikel
|
| 109 |
Melt growth and stoichiometry control of (Cd1−x Zn x )1+yTe single crystals
|
Takahashi, Junichi
|
|
2003
|
|
5-6 |
p. 453-456
4 p.
|
artikel
|
| 110 |
Metal implants-dependent carrier recombination characteristics in Ge
|
Gaubas, E.
|
|
2008
|
|
5-6 |
p. 291-294
4 p.
|
artikel
|
| 111 |
Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach
|
Boudjelida, B.
|
|
2008
|
|
5-6 |
p. 398-401
4 p.
|
artikel
|
| 112 |
MOVPE growth of GaAsN: surface study by AFM and optical properties
|
Auvray, L.
|
|
2000
|
|
5-6 |
p. 505-509
5 p.
|
artikel
|
| 113 |
MT™-compatible connectorisation of VCSEL and RCLED arrays to plastic optical fibre ribbon for low cost parallel datalinks
|
Coosemans, T
|
|
2000
|
|
5-6 |
p. 475-480
6 p.
|
artikel
|
| 114 |
Nanoscale electrical characterization of ultrathin high-k dielectric MOS stacks: A conducting AFM study
|
Uppal, H.J.
|
|
2008
|
|
5-6 |
p. 250-253
4 p.
|
artikel
|
| 115 |
Nanoscale strain characterisation for ultimate CMOS and beyond
|
Olsen, Sarah H.
|
|
2008
|
|
5-6 |
p. 271-278
8 p.
|
artikel
|
| 116 |
NANOSIL network of excellence—silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
|
Balestra, F.
|
|
2008
|
|
5-6 |
p. 148-159
12 p.
|
artikel
|
| 117 |
New types of microlens arrays for the IR based on inorganic chalcogenide photoresists
|
Eisenberg, N.P
|
|
2000
|
|
5-6 |
p. 443-448
6 p.
|
artikel
|
| 118 |
Nitrogen doped silicon films heavily boron implanted for MOS structures: Simulation and characterization
|
Mahamdi, R.
|
|
2010
|
|
5-6 |
p. 383-388
6 p.
|
artikel
|
| 119 |
Nonequilibrium aspects of armchair graphene nanoribbon conduction
|
Deretzis, I.
|
|
2008
|
|
5-6 |
p. 190-194
5 p.
|
artikel
|
| 120 |
Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers
|
Tanno, Takenori
|
|
2003
|
|
5-6 |
p. 437-440
4 p.
|
artikel
|
| 121 |
Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation
|
Kiessling, F.-M.
|
|
2003
|
|
5-6 |
p. 303-306
4 p.
|
artikel
|
| 122 |
Nonstoichiometry and defects in III–V compounds
|
Zlomanov, Vladimir P.
|
|
2003
|
|
5-6 |
p. 311-314
4 p.
|
artikel
|
| 123 |
Nonstoichiometry and point defects in nonlinear optical crystals A2B4C2 5
|
Voevodin, Valeriy G.
|
|
2003
|
|
5-6 |
p. 385-388
4 p.
|
artikel
|
| 124 |
Non-stoichiometry and problem of heavy doping in semiconductor phases
|
Rogacheva, E.I.
|
|
2003
|
|
5-6 |
p. 491-496
6 p.
|
artikel
|
| 125 |
Nonstoichiometry and solubility of impurity in In-doped PbTe films on Si substrates
|
Samoylov, Alexander M
|
|
2003
|
|
5-6 |
p. 327-333
7 p.
|
artikel
|
| 126 |
Non-stoichiometry in SnTe thin films and temperature instabilities of thermoelectric properties
|
Rogacheva, E.I.
|
|
2003
|
|
5-6 |
p. 497-501
5 p.
|
artikel
|
| 127 |
[No title]
|
Crean, G.M
|
|
2000
|
|
5-6 |
p. 329-
1 p.
|
artikel
|
| 128 |
No trace of divacancies at room temperature in germanium
|
Kolkovsky, Vl.
|
|
2008
|
|
5-6 |
p. 336-339
4 p.
|
artikel
|
| 129 |
N-type implantation doping of GaN
|
Nakano, Yoshitaka
|
|
2003
|
|
5-6 |
p. 515-517
3 p.
|
artikel
|
| 130 |
Optical broadcast and clock distribution for multi-chip-modules
|
Pez, M
|
|
2000
|
|
5-6 |
p. 459-466
8 p.
|
artikel
|
| 131 |
Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector
|
Giehler, M.
|
|
2003
|
|
5-6 |
p. 257-261
5 p.
|
artikel
|
| 132 |
Optical study of porous silicon buried waveguides fabricated from p-type silicon
|
Charrier, J
|
|
2000
|
|
5-6 |
p. 357-361
5 p.
|
artikel
|
| 133 |
Optical waveguides fabricated on polymer substrate by electron beam
|
Darraud-Taupiac, C.
|
|
2000
|
|
5-6 |
p. 363-365
3 p.
|
artikel
|
| 134 |
Organic electronics: Materials, technology and circuit design developments enabling new applications
|
de Leeuw, D.M.
|
|
2008
|
|
5-6 |
p. 199-204
6 p.
|
artikel
|
| 135 |
Oxidation characteristics of Si0.85Ge0.15 nanowires
|
Kim, Sang-Yeon
|
|
2008
|
|
5-6 |
p. 182-186
5 p.
|
artikel
|
| 136 |
Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy
|
Harada, Chihiro
|
|
2003
|
|
5-6 |
p. 539-541
3 p.
|
artikel
|
| 137 |
Photonic band structures of 2D non-circular air lattices in Si
|
Hillebrand, R.
|
|
2000
|
|
5-6 |
p. 493-497
5 p.
|
artikel
|
| 138 |
Photophysical properties of nano Si/SiO x composites in Al/composite/mono Si structures for green light emitting and photodetector-Schottky diodes
|
Buzaneva, E
|
|
2000
|
|
5-6 |
p. 529-537
9 p.
|
artikel
|
| 139 |
Planar integration of a polarization-insensitive optical switch with holographic elements
|
Moreau, V
|
|
2000
|
|
5-6 |
p. 551-555
5 p.
|
artikel
|
| 140 |
Polarity control of GaN epilayers grown on ZnO templates
|
Suzuki, Takuma
|
|
2003
|
|
5-6 |
p. 519-521
3 p.
|
artikel
|
| 141 |
Possibilities to increase the resolution of photoelectric incremental rotary encoders
|
Dumbrǎvescu, N
|
|
2000
|
|
5-6 |
p. 557-561
5 p.
|
artikel
|
| 142 |
Preface
|
Suto, K.
|
|
2003
|
|
5-6 |
p. 247-
1 p.
|
artikel
|
| 143 |
Present status and future needs of free-space optical interconnects
|
Esener, Sadik
|
|
2000
|
|
5-6 |
p. 433-435
3 p.
|
artikel
|
| 144 |
Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP
|
Yasuda, Arata
|
|
2003
|
|
5-6 |
p. 487-490
4 p.
|
artikel
|
| 145 |
Properties of pulsed laser deposited vanadium oxide thin film thermistor
|
kumar, R.T.Rajendra
|
|
2003
|
|
5-6 |
p. 375-377
3 p.
|
artikel
|
| 146 |
Proton exchange in Y-cut LiNbO3
|
Kuneva, M.
|
|
2000
|
|
5-6 |
p. 581-583
3 p.
|
artikel
|
| 147 |
Radiation damage in proton-irradiated strained Si n-MOSFETs
|
Hayama, K.
|
|
2008
|
|
5-6 |
p. 314-318
5 p.
|
artikel
|
| 148 |
Radiation damage of Ge-on-Si devices
|
Ohyama, H.
|
|
2008
|
|
5-6 |
p. 217-220
4 p.
|
artikel
|
| 149 |
Raman spectra of GaPAs–GaP heterostructure waveguides
|
Tanabe, T.
|
|
2003
|
|
5-6 |
p. 445-447
3 p.
|
artikel
|
| 150 |
Raman spectroscopy determination of composition and strain in Si 1 - x Ge x / Si heterostructures
|
Pezzoli, F.
|
|
2008
|
|
5-6 |
p. 279-284
6 p.
|
artikel
|
| 151 |
Realization of one-chip-two-wavelength light sources
|
Song, J.S.
|
|
2003
|
|
5-6 |
p. 561-565
5 p.
|
artikel
|
| 152 |
Real structure of partially ordered crystals
|
Kienle, L.
|
|
2003
|
|
5-6 |
p. 393-396
4 p.
|
artikel
|
| 153 |
Reduction of defect states of tantalum oxide thin films with additive elements
|
Salam, K.M.A.
|
|
2003
|
|
5-6 |
p. 531-533
3 p.
|
artikel
|
| 154 |
Region-dependent behavior of I–V characteristics in n-ZnO:Al/p-Si contacts
|
Shen, L.
|
|
2010
|
|
5-6 |
p. 339-343
5 p.
|
artikel
|
| 155 |
Reliability assessment of SiO2/ZrO2 stack gate dielectric on strained-Si/Si0.8Ge0.2 heterolayers under dynamic and AC stress
|
Bera, M.K.
|
|
2008
|
|
5-6 |
p. 254-258
5 p.
|
artikel
|
| 156 |
Room-temperature light-emitting diodes with Ge islands
|
Vescan, L
|
|
2000
|
|
5-6 |
p. 383-387
5 p.
|
artikel
|
| 157 |
Science and prospects for non-stoichiometry in dielectrics
|
Pei, Z.
|
|
2003
|
|
5-6 |
p. 339-342
4 p.
|
artikel
|
| 158 |
Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere
|
Kanno, R.
|
|
2003
|
|
5-6 |
p. 319-322
4 p.
|
artikel
|
| 159 |
SEM observation of InP/ErP/InP double heterostructures grown on InP(001), InP(111)A, and InP(111)B
|
Hirata, T.
|
|
2003
|
|
5-6 |
p. 473-476
4 p.
|
artikel
|
| 160 |
Sensing pulsed light by means of Multi-Walled Carbon Nanotubes
|
Ambrosio, A.
|
|
2008
|
|
5-6 |
p. 187-189
3 p.
|
artikel
|
| 161 |
Shallow boron implantations in Ge and the role of the pre-amorphization depth
|
Simoen, E.
|
|
2008
|
|
5-6 |
p. 368-371
4 p.
|
artikel
|
| 162 |
β-SiC-on insulator waveguide structures for modulators and sensor systems
|
Vonsovici, Adrian
|
|
2000
|
|
5-6 |
p. 367-374
8 p.
|
artikel
|
| 163 |
Silicon-based optical receivers in BiCMOS technology for advanced optoelectronic integrated circuits
|
Kieschnick, K
|
|
2000
|
|
5-6 |
p. 395-398
4 p.
|
artikel
|
| 164 |
Silicon nanodot-array device with multiple gates
|
Jo, Mingyu
|
|
2008
|
|
5-6 |
p. 175-178
4 p.
|
artikel
|
| 165 |
Simultaneous diffusion of Si and Ge in isotopically controlled Si 1 - x Ge x heterostructures
|
Kube, R.
|
|
2008
|
|
5-6 |
p. 378-383
6 p.
|
artikel
|
| 166 |
Sm2O3 gate dielectric on Si substrate
|
Chin, Wen Chiao
|
|
2010
|
|
5-6 |
p. 303-314
12 p.
|
artikel
|
| 167 |
Sol–gel derived germanium sulfide planar waveguides
|
Xu, Jian
|
|
2000
|
|
5-6 |
p. 339-344
6 p.
|
artikel
|
| 168 |
STM nanospectroscopic studies of individual As-antisite defects in GaAs
|
Maeda, K.
|
|
2003
|
|
5-6 |
p. 253-256
4 p.
|
artikel
|
| 169 |
Stoichiometry control and point defects in compound semiconductors
|
Nishizawa, Jun-ichi
|
|
2003
|
|
5-6 |
p. 249-252
4 p.
|
artikel
|
| 170 |
Stoichiometry control of some II–VI ternary solid solutions during sublimation growth
|
Mochizuki, Katsumi
|
|
2003
|
|
5-6 |
p. 293-296
4 p.
|
artikel
|
| 171 |
Stress analysis of Si1− x Ge x embedded source/drain junctions
|
Bargallo Gonzalez, M.
|
|
2008
|
|
5-6 |
p. 285-290
6 p.
|
artikel
|
| 172 |
Structural characterization of DC magnetron-sputtered TiO2 thin films using XRD and Raman scattering studies
|
Karunagaran, B.
|
|
2003
|
|
5-6 |
p. 547-550
4 p.
|
artikel
|
| 173 |
Structural properties of V2O5 thin films prepared by vacuum evaporation
|
Rajendra Kumar, R.T.
|
|
2003
|
|
5-6 |
p. 543-546
4 p.
|
artikel
|
| 174 |
Structure and optical properties of ZnSeO alloys with O composition up to 6.4%
|
Nabetani, Y.
|
|
2003
|
|
5-6 |
p. 343-346
4 p.
|
artikel
|
| 175 |
Subject Index
|
|
|
2000
|
|
5-6 |
p. IV-V
nvt p.
|
artikel
|
| 176 |
Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures
|
Hull, R.
|
|
2008
|
|
5-6 |
p. 160-168
9 p.
|
artikel
|
| 177 |
Synthesis of ZnO and Fe2O3 nanoparticles by sol–gel method and their application in dye-sensitized solar cells
|
Reda, S.M.
|
|
2010
|
|
5-6 |
p. 417-425
9 p.
|
artikel
|
| 178 |
Systematic defect improvement integration of dual damascene processes development on nano semiconductor fabrication
|
Weng, Chun-Jen
|
|
2010
|
|
5-6 |
p. 376-382
7 p.
|
artikel
|
| 179 |
TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer
|
Al-Sa'di, Mahmoud
|
|
2010
|
|
5-6 |
p. 344-348
5 p.
|
artikel
|
| 180 |
Technological processes and modeling of opto-electro-mechanical microstructures
|
Muller, Raluca
|
|
2000
|
|
5-6 |
p. 427-431
5 p.
|
artikel
|
| 181 |
TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography
|
Lindner, Jörg K.N.
|
|
2008
|
|
5-6 |
p. 169-174
6 p.
|
artikel
|
| 182 |
The behaviour of in-diffused copper in n-type CdSnAs2
|
Daunov, M.I
|
|
2003
|
|
5-6 |
p. 323-326
4 p.
|
artikel
|
| 183 |
The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?
|
Vincent, B.
|
|
2008
|
|
5-6 |
p. 205-213
9 p.
|
artikel
|
| 184 |
The magnetic properties in transition metal-doped chalcopyrite semiconductors
|
Kamatani, T
|
|
2003
|
|
5-6 |
p. 389-391
3 p.
|
artikel
|
| 185 |
The one-step vacuum growth of high-quality CuInS2 thin film suitable for photovoltaic applications
|
Shao, Lexi
|
|
2003
|
|
5-6 |
p. 397-400
4 p.
|
artikel
|
| 186 |
Theoretical analysis of microscopic strain distribution and phase stability of Zn chalcogenide alloys using valence force field model
|
Ito, Y.
|
|
2003
|
|
5-6 |
p. 409-412
4 p.
|
artikel
|
| 187 |
Thermal oxidation of tin layers and study of the effect of their annealings on their structural and electrical properties
|
Laghrib, Souad
|
|
2010
|
|
5-6 |
p. 364-370
7 p.
|
artikel
|
| 188 |
Transmission of a microcavity structure in a two-dimensional photonic crystal based on macroporous silicon
|
Birner, A.
|
|
2000
|
|
5-6 |
p. 487-491
5 p.
|
artikel
|
| 189 |
Ultrafast Si-based MSM mesa photodetectors with optical waveguide connection
|
Buchal, Ch
|
|
2000
|
|
5-6 |
p. 399-403
5 p.
|
artikel
|
| 190 |
Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applications
|
Bouloukou, A.
|
|
2008
|
|
5-6 |
p. 390-393
4 p.
|
artikel
|
| 191 |
Vibrational and morphological properties of Sn-doped CdS films deposited by ultrasonic spray pyrolysis method
|
Özer, Tülay
|
|
2010
|
|
5-6 |
p. 325-328
4 p.
|
artikel
|
| 192 |
Waveguide properties of optical thin films grown by pulsed laser deposition
|
Eugenieva, E.D.
|
|
2000
|
|
5-6 |
p. 575-579
5 p.
|
artikel
|
| 193 |
XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors
|
Perego, M.
|
|
2008
|
|
5-6 |
p. 221-225
5 p.
|
artikel
|
| 194 |
X-ray excited spectroscopy of defects and impurities in compound semiconductors
|
Takeda, Y.
|
|
2003
|
|
5-6 |
p. 267-271
5 p.
|
artikel
|
| 195 |
Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism
|
Zhao, J.H.
|
|
2003
|
|
5-6 |
p. 507-509
3 p.
|
artikel
|
Tijdschrift beschrijving