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                             144 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acoustic phonon-assisted damping of Rabi oscillations in InAs quantum dots Moldaschl, T.
 2008
 40 6 p. 2013-2015
3 p.
 artikel
2 All-optical control of the exciton g-factor in InAs/GaAs quantum dots Quax, G.W.W.
 2008
 40 6 p. 1832-1835
4 p.
 artikel
3 Analogue summation of electrical spike trains in semiconductor nerve fibres Samardak, Alexander
 2008
 40 6 p. 2214-2216
3 p.
 artikel
4 An efficient method for multi-band plane wave CI calculations in semiconductor QD's Vukmirović, N.
 2008
 40 6 p. 1924-1925
2 p.
 artikel
5 Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (311)A GaAs substrates Noda, Takeshi
 2008
 40 6 p. 2116-2118
3 p.
 artikel
6 Anisotropy of the electron Landé g factor in InAs/GaAs self-assembled quantum dots Testelin, C.
 2008
 40 6 p. 2072-2074
3 p.
 artikel
7 Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array Sreenivasan, D.
 2008
 40 6 p. 1879-1881
3 p.
 artikel
8 Anti-binding of biexcitons in (211)B InAs/GaAs piezoelectric quantum dots Dialynas, G.E.
 2008
 40 6 p. 2113-2115
3 p.
 artikel
9 Biphoton interference with a quantum dot source of entangled light Hudson, A.J.
 2008
 40 6 p. 1888-1890
3 p.
 artikel
10 Broadband optical absorption in a two-dimensional electron gas in the presence of spin–orbit interaction and high magnetic fields Yang, C.H.
 2008
 40 6 p. 1896-1898
3 p.
 artikel
11 Capacitance–voltage spectroscopy of post-growth annealed InAs quantum dots Reuter, Dirk
 2008
 40 6 p. 1961-1964
4 p.
 artikel
12 Carrier dynamics in InAs quantum dots investigated by current transient response to quasi-resonant interband excitation Cola, A.
 2008
 40 6 p. 2119-2121
3 p.
 artikel
13 Carrier states on cylindrical 2DEGs in a magnetic field Ferrari, Giulio
 2008
 40 6 p. 2040-2042
3 p.
 artikel
14 Charged and neutral excitons in natural quantum dots in the InAs/GaAs wetting layer Babinski, Adam
 2008
 40 6 p. 2078-2080
3 p.
 artikel
15 Charging of a InAs/GaAs single quantum dot from a n-ZnMnSe spin aligner Ghali, M.
 2008
 40 6 p. 2134-2137
4 p.
 artikel
16 Concept of internal mixing in semiconductor lasers and optical amplifiers for room-temperature generation of tunable continuous terahertz waves Lisauskas, Alvydas
 2008
 40 6 p. 1968-1970
3 p.
 artikel
17 Contents 2008
 40 6 p. vii-xiv
nvt p.
 artikel
18 Correlated states and spin transitions in nanofabricated AlGaAs/GaAs few-electron quantum dots probed by inelastic light scattering Kalliakos, Sokratis
 2008
 40 6 p. 1867-1869
3 p.
 artikel
19 Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100K Okano, Makoto
 2008
 40 6 p. 1947-1949
3 p.
 artikel
20 Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells Kvon, Ze-Don
 2008
 40 6 p. 1885-1887
3 p.
 artikel
21 Distinct two dimensional lateral ordering of self-assembled quantum dots Ma, W.Q.
 2008
 40 6 p. 1952-1954
3 p.
 artikel
22 Dynamical frequency pulling of degenerated and nondegenerated modes in small mode volume whispering-gallery terahertz quantum-cascade lasers Fasching, G.
 2008
 40 6 p. 1840-1843
4 p.
 artikel
23 Editorial Board 2008
 40 6 p. IFC-
1 p.
 artikel
24 Effect of carrier localization on modulation mechanism in photoreflectance of InGaPN Lin, K.I.
 2008
 40 6 p. 2188-2191
4 p.
 artikel
25 Effect of vertical electric fields on exciton fine structure of GaAs natural quantum dots Marcet, S.
 2008
 40 6 p. 2069-2071
3 p.
 artikel
26 Effects of accumulated strain on the surface and optical properties of stacked 1.3μm InAs/GaAs quantum dot structures Yang, Tao
 2008
 40 6 p. 2182-2184
3 p.
 artikel
27 Electronic properties of single-walled carbon nanotubes under electric and magnetic fields Lai, P.L.
 2008
 40 6 p. 2056-2058
3 p.
 artikel
28 Electron transport study of a lateral InGaAs quantum dot Larsson, M.
 2008
 40 6 p. 1950-1951
2 p.
 artikel
29 Entanglement induced by noise: Emitters in thermal bandgap reservoirs Mogilevtsev, D.
 2008
 40 6 p. 2141-2143
3 p.
 artikel
30 Epitaxial growth and characterization of Co2MnSi thin films on GaAs with MgO interlayer Uemura, Tetsuya
 2008
 40 6 p. 2025-2027
3 p.
 artikel
31 Exact biexciton binding energy in carbon nanotubes using a quantum Monte Carlo approach Kammerlander, David
 2008
 40 6 p. 1997-1999
3 p.
 artikel
32 Exchange-enhanced spin splitting in a two-dimensional electron gas in the presence of spin–orbit interaction and magnetic fields Yang, C.H.
 2008
 40 6 p. 1979-1981
3 p.
 artikel
33 Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping Muñoz-Matutano, Guillermo
 2008
 40 6 p. 2100-2103
4 p.
 artikel
34 Exciton radiative lifetime of quantum rods in reflectivity Sreenivasan, D.
 2008
 40 6 p. 1985-1987
3 p.
 artikel
35 Experimental determination of domain wall width and spin stiffness constant in ferromagnetic (Ga,Mn)As with perpendicular easy axis Dourlat, A.
 2008
 40 6 p. 1848-1850
3 p.
 artikel
36 Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator Kita, T.
 2008
 40 6 p. 1930-1932
3 p.
 artikel
37 Fabrication of 3D micro-cantilevers based on MBE-grown strained semiconductor layers Iwase, Hiuma
 2008
 40 6 p. 2210-2213
4 p.
 artikel
38 First-principles study of doped Si and Ge nanowires Peelaers, H.
 2008
 40 6 p. 2169-2171
3 p.
 artikel
39 Frequency-selective single-photon detection with a double quantum dot Leturcq, R.
 2008
 40 6 p. 1844-1847
4 p.
 artikel
40 GaMnAs on InGaAs templates: Influence of strain on the electronic and magnetic properties Daeubler, J.
 2008
 40 6 p. 1876-1878
3 p.
 artikel
41 Gate leakage induced gating in low-dimensional conductors Spanheimer, D.
 2008
 40 6 p. 2150-2152
3 p.
 artikel
42 Growth and characterization of CdSe nanoneedles and other one-dimensional CdSe nanostructures Cheng, J.H.
 2008
 40 6 p. 2000-2003
4 p.
 artikel
43 Growth and optical properties of self-assembled InGaAs quantum posts Krenner, H.J.
 2008
 40 6 p. 1785-1789
5 p.
 artikel
44 Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures Sawano, K.
 2008
 40 6 p. 2122-2124
3 p.
 artikel
45 Hot-electron bend resistance in a ballistic GaAs/AlGaAs cross junction Wiemann, M.
 2008
 40 6 p. 2128-2130
3 p.
 artikel
46 Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors Son, S.H.
 2008
 40 6 p. 2160-2162
3 p.
 artikel
47 Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide technique Mozume, T.
 2008
 40 6 p. 2031-2033
3 p.
 artikel
48 Influence of contact metals on the performance and morphology of pentacene bottom-contact field-effect transistors Bock, C.
 2008
 40 6 p. 2107-2109
3 p.
 artikel
49 Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots Richter, Mirja
 2008
 40 6 p. 1891-1893
3 p.
 artikel
50 Influence of valence band spin–orbit coupling on the entanglement of excitons in coupled quantum dots Climente, J.I.
 2008
 40 6 p. 1862-1864
3 p.
 artikel
51 Intense photoluminescence from highly stacked quantum dash structure fabricated by strain-compensation technique Akahane, Kouichi
 2008
 40 6 p. 1916-1919
4 p.
 artikel
52 Interface-roughness scattering and magnetoresistance in thin AlP(100) quantum well structures Gold, A.
 2008
 40 6 p. 2028-2030
3 p.
 artikel
53 Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots Sheng, Weidong
 2008
 40 6 p. 1894-1895
2 p.
 artikel
54 List of Authors 2008
 40 6 p. xv-xviii
nvt p.
 artikel
55 Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells Gärtner, A.
 2008
 40 6 p. 1828-1831
4 p.
 artikel
56 Localized strain effects on photoluminescence of quantum dots induced by nanoprobe indentation Ozasa, Kazunari
 2008
 40 6 p. 1920-1923
4 p.
 artikel
57 Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure Lee, Jungil
 2008
 40 6 p. 2147-2149
3 p.
 artikel
58 Low-temperature growth of nanostructured InGaSb semiconductors on silicon substrates Yamamoto, Naokatsu
 2008
 40 6 p. 2195-2197
3 p.
 artikel
59 Magnetic energy bands of a 2D graphite layer in the spatially modulated magnetic field Chiu, Y.H.
 2008
 40 6 p. 2022-2024
3 p.
 artikel
60 Magnetic field induced by the carbon nanotubes current by magnetic force microscopy Tsubaki, Kotaro
 2008
 40 6 p. 2220-2221
2 p.
 artikel
61 Magnetic-field-induced modification of the wave-functions in InAs quantum dots Lei, W.
 2008
 40 6 p. 1870-1872
3 p.
 artikel
62 Magnetic-field induced subband mixing in tunnel-coupled quantum point contacts: Transport spectroscopy and numerical modelling Bertoni, Andrea
 2008
 40 6 p. 1855-1858
4 p.
 artikel
63 Magnetic properties of MnP nanowhiskers grown by MBE Bouravleuv, Alexei D.
 2008
 40 6 p. 2037-2039
3 p.
 artikel
64 Magneto-ballistic effects in non-centrosymmetric GaAs/AlGaAs cross junctions Wieser, U.
 2008
 40 6 p. 2179-2181
3 p.
 artikel
65 Magnetoelectronic properties of finite double-walled carbon nanotubes Lee, C.H.
 2008
 40 6 p. 2053-2055
3 p.
 artikel
66 Magneto-photoluminescence of heavy- and light-hole excitons in site-controlled pyramidal quantum dots Byszewski, M.
 2008
 40 6 p. 1873-1875
3 p.
 artikel
67 Magneto-photoluminescence study in single GaAs/AlGaAs self-assembled quantum dot Abbarchi, M.
 2008
 40 6 p. 1982-1984
3 p.
 artikel
68 Manipulation of an unusual anomalous Hall effect in Ga1− x Mn x Sb random alloys Eginligil, Mustafa
 2008
 40 6 p. 2104-2106
3 p.
 artikel
69 Measuring the Zeeman energy and the spin polarization of a 2DEG in quantum wells Aku-Leh, Cynthia
 2008
 40 6 p. 1865-1866
2 p.
 artikel
70 Micro-photoluminescence spectroscopy study of high-quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy Kobayashi, Yasunori
 2008
 40 6 p. 2204-2206
3 p.
 artikel
71 Modulation of the Aharonov–Bohm effect in type-II II–V ZnSe:Te quantum dots by a far-infrared laser Sellers, Ian R.
 2008
 40 6 p. 1819-1823
5 p.
 artikel
72 Molecular beam epitaxial growth of site-controlled InAs quantum dot arrays using templates fabricated by the Nano-Jet Probe method Ohkouchi, S.
 2008
 40 6 p. 1794-1796
3 p.
 artikel
73 MSS-13 Goldoni, Guido
 2008
 40 6 p. v-vi
nvt p.
 artikel
74 Nanoscale heat transfer in quantum cascade lasers Scamarcio, Gaetano
 2008
 40 6 p. 1780-1784
5 p.
 artikel
75 Near-field mapping of quantum dot emission from single-photonic crystal cavity modes Intonti, F.
 2008
 40 6 p. 1965-1967
3 p.
 artikel
76 Near-field modulation of laser diode emissions by an aperture probe of near-field optical microscope Tomioka, Akihiro
 2008
 40 6 p. 2201-2203
3 p.
 artikel
77 New emerging effects in microwave-induced resistivity oscillations in 2D electron systems: Bichromatic radiation, anharmonicity and polarization immunity Iñarrea, Jesús
 2008
 40 6 p. 1902-1905
4 p.
 artikel
78 Non-resonant tunneling in single pairs of vertically stacked asymmetric InP/GaInP quantum dots Reischle, M.
 2008
 40 6 p. 1958-1960
3 p.
 artikel
79 Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature Myronov, M.
 2008
 40 6 p. 1935-1937
3 p.
 artikel
80 Observation of very narrow fine-structure splittings in self-assembled quantum dots by photocurrent spectroscopy Takagi, Hiroyuki
 2008
 40 6 p. 2192-2194
3 p.
 artikel
81 Optical emission of InAs/GaAs quantum rings coupled to a two-dimensional photonic crystal microcavity Sarkar, D.
 2008
 40 6 p. 2156-2159
4 p.
 artikel
82 Optical fine structure of single ordered GaAs quantum dots Kiravittaya, S.
 2008
 40 6 p. 1909-1912
4 p.
 artikel
83 Optical polarization in vertically coupled InGaAs quantum dots of p-type modulation doping Chuang, K.Y.
 2008
 40 6 p. 1882-1884
3 p.
 artikel
84 Oxide–semiconductor micro-pillar cavities Bennett, A.J.
 2008
 40 6 p. 2093-2095
3 p.
 artikel
85 Patterning surface oxide nanostructures using atomic force microscope local anodic oxidation Kim, Tae Young
 2008
 40 6 p. 1941-1943
3 p.
 artikel
86 Phase-coherent transport in a mesoscopic few-layer graphite wire Ihn, T.
 2008
 40 6 p. 1851-1854
4 p.
 artikel
87 Photo absorption in spintronic multilayer systems Beaven, D.J.D.
 2008
 40 6 p. 2138-2140
3 p.
 artikel
88 Photoluminescence studies of GaN epilayer–nanocrystals grown on γ-LiAlO2 substrate Hsu, C.H.
 2008
 40 6 p. 1971-1974
4 p.
 artikel
89 Polariton dynamics in disordered microcavities Michetti, P.
 2008
 40 6 p. 1926-1929
4 p.
 artikel
90 Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides Winkelnkemper, M.
 2008
 40 6 p. 2217-2219
3 p.
 artikel
91 Polarized-microwave control of directed transport in a 2D electron gas with artificial asymmetrical scatterers Sassine, S.
 2008
 40 6 p. 2043-2045
3 p.
 artikel
92 Possible persistent current in a ring made of the perfect crystalline insulator Mošková, A.
 2008
 40 6 p. 1991-1993
3 p.
 artikel
93 Proceedings of the13th International Conference on Modulated Semiconductor Structures (MSS-13) Goldoni, G.
 2008
 40 6 p. iii-
1 p.
 artikel
94 Proposal for fast optical spin rotations in quantum dots Economou, Sophia E.
 2008
 40 6 p. 1933-1934
2 p.
 artikel
95 p-Shell Rabi-flopping and single photon emission in an InGaAs/GaAs quantum dot Ester, P.
 2008
 40 6 p. 2004-2006
3 p.
 artikel
96 Quantum confinement effects on the spin splitting and polarization of quasi-1D holes Csontos, D.
 2008
 40 6 p. 2059-2062
4 p.
 artikel
97 Quantum dot cascade laser: Arguments in favor Dmitriev, I.A.
 2008
 40 6 p. 2007-2009
3 p.
 artikel
98 Quantum dot molecules realized with modulated quantum wire heterostructrues Zhu, Qing
 2008
 40 6 p. 1815-1818
4 p.
 artikel
99 Quantum dots as tunable scatterers for 2D- and 1D-electron systems Marquardt, Bastian
 2008
 40 6 p. 2075-2077
3 p.
 artikel
100 Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates Lazić, S.
 2008
 40 6 p. 2087-2090
4 p.
 artikel
101 Rapid spin flip in a spin subband at an anticrossing region in a slightly asymmetric modulation-doped quantum well Gvozdić, Dejan M.
 2008
 40 6 p. 2081-2083
3 p.
 artikel
102 Resonant optical excitation and intermixing in InAs/AlAs single quantum dots Sarkar, D.
 2008
 40 6 p. 2172-2175
4 p.
 artikel
103 Resonant Raman study of local vibration modes in AlGaAsN layers Gallardo, E.
 2008
 40 6 p. 2084-2086
3 p.
 artikel
104 Resonant saturation laser spectroscopy of a single self-assembled quantum dot Kroner, M.
 2008
 40 6 p. 1994-1996
3 p.
 artikel
105 Role of defect states on electrical and optical properties in CdSe nanorod thin films Cretì, A.
 2008
 40 6 p. 2063-2065
3 p.
 artikel
106 Room temperature emission from CdSe single quantum dots embedded in high bandgap barrier material Arians, R.
 2008
 40 6 p. 1938-1940
3 p.
 artikel
107 Self-consistent model of spin dependent tunneling in (Ga,Mn)As structures Sankowski, P.
 2008
 40 6 p. 1944-1946
3 p.
 artikel
108 Single photon emission with high degree of circular polarization from a single quantum dot under zero magnetic field Kumano, H.
 2008
 40 6 p. 1824-1827
4 p.
 artikel
109 Site-selective growth of self-assembled InAs quantum dots on focused ion beam patterned GaAs Mehta, M.
 2008
 40 6 p. 2034-2036
3 p.
 artikel
110 Spatial distribution of strong and weak coupled exciton–polaritons in semiconductor microcavities Ballarini, Dario
 2008
 40 6 p. 2049-2052
4 p.
 artikel
111 Spatial emission characteristics of a semiconductor microtube ring resonator Strelow, Ch.
 2008
 40 6 p. 1836-1839
4 p.
 artikel
112 Spin dependent current in a modified Aharonov–Bohm interferometer Seo, K.C.
 2008
 40 6 p. 2185-2187
3 p.
 artikel
113 Spin–orbit dependence on carrier momentum in (110) GaAs quantum wells Couto Jr., O.D.D.
 2008
 40 6 p. 1797-1799
3 p.
 artikel
114 Spin relaxation due to spin–orbit coupling in multi-electron quantum dots Climente, J.I.
 2008
 40 6 p. 1804-1806
3 p.
 artikel
115 Statistics of quantum dot exciton fine structure splittings and their polarization orientations Seidl, S.
 2008
 40 6 p. 2153-2155
3 p.
 artikel
116 Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots Sénès, M.
 2008
 40 6 p. 2066-2068
3 p.
 artikel
117 Strong spin–orbit interactions in carbon doped p-type GaAs heterostructures Grbić, B.
 2008
 40 6 p. 2144-2146
3 p.
 artikel
118 Structure of InAs quantum dots-in-a-well nanostructures Lenz, A.
 2008
 40 6 p. 1988-1990
3 p.
 artikel
119 Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance Wang, T.S.
 2008
 40 6 p. 1975-1978
4 p.
 artikel
120 Superlattice properties of semiconductor nanohelices in a transverse electric field Kibis, O.V.
 2008
 40 6 p. 1899-1901
3 p.
 artikel
121 Tailoring light–matter interaction in intersubband microcavities Anappara, Aji A.
 2008
 40 6 p. 1906-1908
3 p.
 artikel
122 Temporal isolation of surface-acoustic-wave-driven luminescence from a lateral p–n junction using pulsed techniques Gell, J.R.
 2008
 40 6 p. 1775-1779
5 p.
 artikel
123 Terahertz quantum cascade lasers with quasi-periodic resonators Mahler, Lukas
 2008
 40 6 p. 2176-2178
3 p.
 artikel
124 The articles of this Proceedings were received at Elsevier on 26 November 2007 2008
 40 6 p. iv-
1 p.
 artikel
125 The effect of the dielectric mismatch on excitons and trions in freestanding nanowires Slachmuylders, A.F.
 2008
 40 6 p. 2166-2168
3 p.
 artikel
126 The electro-magnetostatic Aharonov–Bohm effect as a tool to tune the Josephson current Dolcini, Fabrizio
 2008
 40 6 p. 2091-2092
2 p.
 artikel
127 The group III–V's semiconductor energy gaps predicted using the B3LYP hybrid functional Tomić, S.
 2008
 40 6 p. 2125-2127
3 p.
 artikel
128 The growth and measurement of terahertz quantum cascade lasers Khanna, Suraj P.
 2008
 40 6 p. 1859-1861
3 p.
 artikel
129 The low-energy electronic structures of nanographite ribbons in modulated magnetic fields Wu, J.Y.
 2008
 40 6 p. 2019-2021
3 p.
 artikel
130 Theoretical analysis of 1.55 μ m emitting GaInNAs QD's on different substrates Tomić, S.
 2008
 40 6 p. 1955-1957
3 p.
 artikel
131 THz quantum cascade designs for optimized injection Losco, T.
 2008
 40 6 p. 2207-2209
3 p.
 artikel
132 Towards an universal memory based on self-organized quantum dots Geller, M.
 2008
 40 6 p. 1811-1814
4 p.
 artikel
133 Towards scalable gated quantum dots for quantum information applications Reimer, M.E.
 2008
 40 6 p. 1790-1793
4 p.
 artikel
134 Transient properties of voltage-controlled transparency in an asymmetric double quantum dot Ioannou, M.
 2008
 40 6 p. 2010-2012
3 p.
 artikel
135 Transitions of density of states and heat capacity in spherical quantum structure formed by a thin barrier Lee, Seung Joo
 2008
 40 6 p. 2198-2200
3 p.
 artikel
136 Transport in a p-type CdB x F2− x quantum well on an n-type CdF2 surface Bagraev, Nikolay T.
 2008
 40 6 p. 1913-1915
3 p.
 artikel
137 Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs Endo, Y.
 2008
 40 6 p. 2110-2112
3 p.
 artikel
138 Two-level anti-crossings high up in the single-particle energy spectrum of a quantum dot Payette, C.
 2008
 40 6 p. 1807-1810
4 p.
 artikel
139 Ultrafast optical studies of diffusion barriers between ferromagnetic Ga(Mn)As layers and non-magnetic quantum wells Schulz, R.
 2008
 40 6 p. 2163-2165
3 p.
 artikel
140 Ultra-low threshold photonic crystal nanocavity laser Nomura, Masahiro
 2008
 40 6 p. 1800-1803
4 p.
 artikel
141 Using a four-probe scanning tunneling microscope to characterize phosphorus doped ohmic contacts for atomic scale devices in silicon Clarke, W.R.
 2008
 40 6 p. 2131-2133
3 p.
 artikel
142 Utilization of GaN:Eu3+ nanocrystals for the detection of programmed cell death Bilyy, R.
 2008
 40 6 p. 2096-2099
4 p.
 artikel
143 Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures Virgilio, Michele
 2008
 40 6 p. 2046-2048
3 p.
 artikel
144 Various photoluminescence properties due to Γ–X resonance in type-I GaAs/AlAs multi-quantum wells consisting of quantum wells with different thicknesses Ohtani, Naoki
 2008
 40 6 p. 2016-2018
3 p.
 artikel
                             144 gevonden resultaten
 
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