| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel method for positioning of InAs islands on GaAs (110)
|
Cui, C.X.
|
|
2005
|
28 |
4 |
p. 537-544
8 p.
|
artikel
|
| 2 |
A quasi-two-dimensional charge transport model of AlGaN/GaN high electron mobility transistors (HEMTs)
|
Asgari, A.
|
|
2005
|
28 |
4 |
p. 491-499
9 p.
|
artikel
|
| 3 |
A theoretical model for quantum nanostructures electronic wave functions, magnetic field effects
|
Even, J.
|
|
2005
|
28 |
4 |
p. 514-518
5 p.
|
artikel
|
| 4 |
Barrier penetration in Kane type semiconductor nanostructures
|
Hashimzade, F.M.
|
|
2005
|
28 |
4 |
p. 447-452
6 p.
|
artikel
|
| 5 |
Coherent transport in linear arrays of quantum dots: The effects of period doubling and of quasi-periodicity
|
Bakhtiari, M.R.
|
|
2005
|
28 |
4 |
p. 385-392
8 p.
|
artikel
|
| 6 |
Correlation energies of many-body complexes in biased InAs/GaAs quantum dots
|
Turki-Ben Ali, Y.
|
|
2005
|
28 |
4 |
p. 347-354
8 p.
|
artikel
|
| 7 |
Dependence on temperature of homogeneous broadening of InGaAs/InAs/GaAs quantum dot fundamental transitions
|
Ouerghui, W.
|
|
2005
|
28 |
4 |
p. 519-524
6 p.
|
artikel
|
| 8 |
Electronic properties of a large quantum dot at a finite temperature
|
Gülveren, Berna
|
|
2005
|
28 |
4 |
p. 482-490
9 p.
|
artikel
|
| 9 |
Electronic states in a step quantum well in a magnetic field
|
Barseghyan, Manuk G.
|
|
2005
|
28 |
4 |
p. 471-481
11 p.
|
artikel
|
| 10 |
Electronic states in quantum dots with ellipsoidal symmetry
|
Dvoyan, K.G.
|
|
2005
|
28 |
4 |
p. 333-338
6 p.
|
artikel
|
| 11 |
Geometry-induced localization phenomena in semiconductor quantum-dot heterostructures
|
Lassen, B.
|
|
2005
|
28 |
4 |
p. 568-575
8 p.
|
artikel
|
| 12 |
Impurity optical absorption in parabolic quantum well
|
Kazaryan, Eduard M.
|
|
2005
|
28 |
4 |
p. 423-430
8 p.
|
artikel
|
| 13 |
Index of Authors and Papers
|
|
|
2005
|
28 |
4 |
p. 576-580
5 p.
|
artikel
|
| 14 |
Inside Front Cover/Editorial Board page
|
|
|
2005
|
28 |
4 |
p. CO2-
1 p.
|
artikel
|
| 15 |
Localized electronic states in N -layer-based superlattices with structural defects
|
Huang, Wei-Qing
|
|
2005
|
28 |
4 |
p. 374-384
11 p.
|
artikel
|
| 16 |
Modified five-layer asymmetric coupled quantum well (M-FACQW) for giant negative refractive index change
|
Niiya, Norio
|
|
2005
|
28 |
4 |
p. 507-513
7 p.
|
artikel
|
| 17 |
Optically detected electrophonon resonance effects in quantum wells
|
Chil Lee, Sang
|
|
2005
|
28 |
4 |
p. 402-411
10 p.
|
artikel
|
| 18 |
Optical properties of a magneto-donor in a quantum dot
|
Didi Seddik, A.
|
|
2005
|
28 |
4 |
p. 339-346
8 p.
|
artikel
|
| 19 |
Parameter-dependent resonant third-order susceptibility contributed by inter-band transitions in In x Ga 1 - x N / GaN quantum wells
|
Gao, Fei
|
|
2005
|
28 |
4 |
p. 412-418
7 p.
|
artikel
|
| 20 |
Preparation and characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes
|
Taguchi, Tomitsugu
|
|
2005
|
28 |
4 |
p. 431-438
8 p.
|
artikel
|
| 21 |
Propagation of ultrasonic waves in bulk gallium nitride (GaN) semiconductor in the presence of high-frequency electric field
|
Mensah, S.Y.
|
|
2005
|
28 |
4 |
p. 500-506
7 p.
|
artikel
|
| 22 |
Quantum Hall effect: The resistivity of a 2D electron gas—a thermodynamic approach
|
Cheremisin, M.V.
|
|
2005
|
28 |
4 |
p. 393-401
9 p.
|
artikel
|
| 23 |
Raman study of Si–Ge intermixing in Ge quantum rings and dots
|
Mashanov, V.I.
|
|
2005
|
28 |
4 |
p. 531-536
6 p.
|
artikel
|
| 24 |
Self-assembled nanocrystalline CdSe thin films
|
Chaure, Shweta
|
|
2005
|
28 |
4 |
p. 439-446
8 p.
|
artikel
|
| 25 |
Self-assembling of C and Sn in Ge
|
Elyukhin, V.A
|
|
2005
|
28 |
4 |
p. 552-555
4 p.
|
artikel
|
| 26 |
Spectral line broadening in quantum wells due to Coulomb interaction of current carriers
|
Afonenko, A.A.
|
|
2005
|
28 |
4 |
p. 556-567
12 p.
|
artikel
|
| 27 |
Stark effect in a wedge-shaped quantum box
|
Reyes-Esqueda, Jorge-Alejandro
|
|
2005
|
28 |
4 |
p. 365-373
9 p.
|
artikel
|
| 28 |
Subject Index
|
|
|
2005
|
28 |
4 |
p. 581-582
2 p.
|
artikel
|
| 29 |
Surface-enhanced Raman scattering from the individual metallic single-walled carbon nanotubes
|
Zhou, Zhenping
|
|
2005
|
28 |
4 |
p. 360-364
5 p.
|
artikel
|
| 30 |
The binding energy of hydrogen-like impurity in quantum dots with convex bottom in magnetic field
|
Manaselyan, Aram Kh.
|
|
2005
|
28 |
4 |
p. 462-470
9 p.
|
artikel
|
| 31 |
The energy-loss rate via polar-optical phonon scattering in quantum wires
|
Vartanian, Arshak L.
|
|
2005
|
28 |
4 |
p. 545-551
7 p.
|
artikel
|
| 32 |
The exact solutions of Kane equations which have position-dependence band gap in an external non-uniform electric field
|
Hashimzade, F.M.
|
|
2005
|
28 |
4 |
p. 355-359
5 p.
|
artikel
|
| 33 |
Theoretical investigation of intersubband transition in Al x Ga1− x N/GaN/Al y Ga1− y N step quantum well
|
Li, J.M.
|
|
2005
|
28 |
4 |
p. 453-461
9 p.
|
artikel
|
| 34 |
Theoretical study of defects of BN nanotubes: A molecular-mechanics study
|
Moon, Won Ha
|
|
2005
|
28 |
4 |
p. 419-422
4 p.
|
artikel
|
| 35 |
Visible photoluminescence from Ge quantum dots
|
Sun, K.W.
|
|
2005
|
28 |
4 |
p. 525-530
6 p.
|
artikel
|
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