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                             52 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(001) substrates Monte, A.F.G
 2004
 23 3-4 p. 466-470
5 p.
 artikel
2 Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires Alderighi, D
 2004
 23 3-4 p. 449-454
6 p.
 artikel
3 Characterization by X-ray diffraction and electron microscopy of GaInAs and GaAsN single layers and quantum wells grown on GaAs Varlet, H
 2004
 23 3-4 p. 362-369
8 p.
 artikel
4 Comparative study of (100) and (111)B InGaAs single quantum well laser diodes Dialynas, G.E
 2004
 23 3-4 p. 329-333
5 p.
 artikel
5 Contents 2004
 23 3-4 p. ix-xi
nvt p.
 artikel
6 Continuous wavelength tuning of InAs quantum dots on InP (100) and (311)A substrates by chemical-beam epitaxy Gong, Q
 2004
 23 3-4 p. 435-441
7 p.
 artikel
7 Effects of nanocrystal shape on the physical properties of colloidal ZnO quantum dots Qu, Fanyao
 2004
 23 3-4 p. 410-415
6 p.
 artikel
8 Electrical characterisation of local electronic properties of self-assembled semiconductor nanostructures using AFM Decossas, S
 2004
 23 3-4 p. 396-400
5 p.
 artikel
9 Free-standing Si/SiGe micro- and nano-objects Zhang, L
 2004
 23 3-4 p. 280-284
5 p.
 artikel
10 Gated spin relaxation in (110)-oriented quantum wells Henini, M
 2004
 23 3-4 p. 309-314
6 p.
 artikel
11 Ge dots on Si (111) and (100) surfaces with SiO2 coverage: Raman study Volodin, V.A
 2004
 23 3-4 p. 320-323
4 p.
 artikel
12 Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0001) Aı̈t-Mansour, K
 2004
 23 3-4 p. 428-434
7 p.
 artikel
13 Growth and optical properties of Ge/Si quantum dots formed on patterned SiO 2/Si(001) substrates Nguyen, Lam.H
 2004
 23 3-4 p. 471-475
5 p.
 artikel
14 Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE Motohisa, J
 2004
 23 3-4 p. 298-304
7 p.
 artikel
15 Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy Toda, T
 2004
 23 3-4 p. 315-319
5 p.
 artikel
16 Growth of Ge islands on prepatterned Si (001) substrates Zhong, Zhenyang
 2004
 23 3-4 p. 243-247
5 p.
 artikel
17 Growth of M-plane GaN on γ- LiAlO 2(100): the role of Ga adsorption/desorption Brandt, Oliver
 2004
 23 3-4 p. 339-346
8 p.
 artikel
18 Growth of three-dimensional quantum dot crystals on patterned GaAs (001) substrates Kiravittaya, S
 2004
 23 3-4 p. 253-259
7 p.
 artikel
19 Heterostructures overgrown on GaAs corner substrates Schuh, D
 2004
 23 3-4 p. 293-297
5 p.
 artikel
20 InAs/GaAs (111)A heteroepitaxial systems Yamaguchi, H
 2004
 23 3-4 p. 285-292
8 p.
 artikel
21 Index of Authors and Papers 2004
 23 3-4 p. 491-496
6 p.
 artikel
22 Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on (111)B GaAs Miguel-Sánchez, J
 2004
 23 3-4 p. 356-361
6 p.
 artikel
23 Inside Front Cover/Editorial Board page 2004
 23 3-4 p. IFC-
1 p.
 artikel
24 Lateral junctions for high-density integration of optoelectronic devices Vaccaro, P.O
 2004
 23 3-4 p. 324-328
5 p.
 artikel
25 List of Authors 2004
 23 3-4 p. xiii-xv
nvt p.
 artikel
26 Lithographic positioning, areal density increase and fluid transport in rolled-up nanotubes Deneke, Ch
 2004
 23 3-4 p. 269-273
5 p.
 artikel
27 Local band gap modulation of AlGaAs grown on patterned GaAs substrates Limmer, W
 2004
 23 3-4 p. 455-460
6 p.
 artikel
28 Mechanisms of self-organization of Ge/Si(001) quantum dots Le Thanh, V
 2004
 23 3-4 p. 401-409
9 p.
 artikel
29 Migration-enhanced epitaxy (MEE) growth of five-layer asymmetric coupled quantum well (FACQW) and its cross-sectional STM observation Noh, Joo-Hyong
 2004
 23 3-4 p. 482-486
5 p.
 artikel
30 Photoluminescence of GeSi/Si(001) self-assembled islands with dome and hut shape Novikov, Alexey V
 2004
 23 3-4 p. 416-420
5 p.
 artikel
31 Precise semiconductor nanotubes and nanoshells fabricated on (110) and (111) Si and GaAs Prinz, V.Ya
 2004
 23 3-4 p. 260-268
9 p.
 artikel
32 Preface Schmidt, Oliver G
 2004
 23 3-4 p. v-vi
nvt p.
 artikel
33 Preface Schmidt, Oliver G
 2004
 23 3-4 p. vii-
1 p.
 artikel
34 Preparation of curved two-dimensional electron systems in InGaAs/GaAs-microtubes Mendach, S
 2004
 23 3-4 p. 274-279
6 p.
 artikel
35 Proceedings title page Schmidt, O.G
 2004
 23 3-4 p. iii-
1 p.
 artikel
36 {111} Quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxy Arnoult, A
 2004
 23 3-4 p. 352-355
4 p.
 artikel
37 Received date page 2004
 23 3-4 p. iv-
1 p.
 artikel
38 Selective area growth of GaInNAs/GaAs by MOVPE Olsson, F
 2004
 23 3-4 p. 347-351
5 p.
 artikel
39 Self-assembled GaAs/AlGaAs quantum dots by molecular beam epitaxy and in situ AsBr3 etching Rastelli, A
 2004
 23 3-4 p. 384-389
6 p.
 artikel
40 Self-patterned Si surfaces as templates for Ge islands ordering Ronda, A
 2004
 23 3-4 p. 370-376
7 p.
 artikel
41 Shape, facet evolution and photoluminescence of Ge islands capped with Si at different temperatures Stoffel, M
 2004
 23 3-4 p. 421-427
7 p.
 artikel
42 Single-step growth of InGaAsP/InP laser array on patterned InP substrate Rakovics, V
 2004
 23 3-4 p. 334-338
5 p.
 artikel
43 Site-controlled quantum dots grown in inverted pyramids for photonic crystal applications Pelucchi, E
 2004
 23 3-4 p. 476-481
6 p.
 artikel
44 Site selective growth of Ge quantum dots on AFM-patterned Si substrates Hirai, A
 2004
 23 3-4 p. 248-252
5 p.
 artikel
45 Structural and optical investigations of 1-, 2-, and 3-dimensional InAs quantum dot arrays Heidemeyer, H
 2004
 23 3-4 p. 237-242
6 p.
 artikel
46 Structural and optical properties of vertically aligned InP nanowires grown by metal organic vapor phase epitaxy Watanabe, Y
 2004
 23 3-4 p. 305-308
4 p.
 artikel
47 Structure and photoluminescence study of type-II GaAs quantum wires and dots grown on nano-faceted (311)A surface Efremov, M.D
 2004
 23 3-4 p. 461-465
5 p.
 artikel
48 Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy Mantovani, V
 2004
 23 3-4 p. 377-383
7 p.
 artikel
49 Study of YBaCuO quasi-two-dimensional crystalline structure by light scattering Rumyantsev, V.V.
 2004
 23 3-4 p. 487-490
4 p.
 artikel
50 Subject Index 2004
 23 3-4 p. 497-499
3 p.
 artikel
51 Transient-enhanced Si diffusion on natural-oxide-covered Si(001) nano-structures during vacuum annealing Lichtenberger, H
 2004
 23 3-4 p. 442-448
7 p.
 artikel
52 Tuning of long-wavelength emission in In x Ga1−x As quantum dot structures Passaseo, A
 2004
 23 3-4 p. 390-395
6 p.
 artikel
                             52 gevonden resultaten
 
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