| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absorption spectroscopy of single InAs self-assembled quantum dots
|
Alèn, B
|
|
2004
|
21 |
2-4 |
p. 395-399
5 p.
|
artikel
|
| 2 |
[(AlN)1/(GaN) n1] m /(AlN) n2-based quantum wells for quantum-cascade-laser application
|
Ishida, A
|
|
2004
|
21 |
2-4 |
p. 765-769
5 p.
|
artikel
|
| 3 |
Analysis of inelastic scattering processes of electrons by localized electrons in quantum dots
|
Kawazu, T
|
|
2004
|
21 |
2-4 |
p. 532-535
4 p.
|
artikel
|
| 4 |
Anisotropic exchange interaction in CdTe/Cd0.75Mn0.25Te quantum wires
|
Nagahara, S
|
|
2004
|
21 |
2-4 |
p. 345-348
4 p.
|
artikel
|
| 5 |
Anomalous relaxation of dynamically localized indirect excitons in a pseudomorphic Si1−X Ge X /Si double quantum well
|
Yasuhara, N
|
|
2004
|
21 |
2-4 |
p. 798-801
4 p.
|
artikel
|
| 6 |
A nonlocal theory of the Franz–Keldysh effect in semiconductor quantum wires
|
Sakai, Masamichi
|
|
2004
|
21 |
2-4 |
p. 367-371
5 p.
|
artikel
|
| 7 |
A novel spin transistor based on spin-filtering in ferromagnetic barriers: a spin-filter transistor
|
Sugahara, Satoshi
|
|
2004
|
21 |
2-4 |
p. 996-1001
6 p.
|
artikel
|
| 8 |
A tight-binding-based analysis of the band anti-crossing model in GaN x As1−x
|
Lindsay, A
|
|
2004
|
21 |
2-4 |
p. 901-906
6 p.
|
artikel
|
| 9 |
Bandgap photoluminescence of semiconducting single-wall carbon nanotubes
|
Lauret, J.-S
|
|
2004
|
21 |
2-4 |
p. 1057-1060
4 p.
|
artikel
|
| 10 |
Biexcitons in self-organized InAs/GaAs quantum dots: an optical probe for structural properties
|
Rodt, S
|
|
2004
|
21 |
2-4 |
p. 1065-1069
5 p.
|
artikel
|
| 11 |
Bloch gain in AlGaAs/GaAs semiconductor superlattices
|
Sekine, N
|
|
2004
|
21 |
2-4 |
p. 858-862
5 p.
|
artikel
|
| 12 |
Bose–Einstein statistics behaviors of exciton–biexciton photoluminescence decay processes in a GaAs/AlAs type-II superlattice
|
Nakayama, M
|
|
2004
|
21 |
2-4 |
p. 651-655
5 p.
|
artikel
|
| 13 |
CaF2 growth as a buffer layer of ZnO/Si heteroepitaxy
|
Koike, K
|
|
2004
|
21 |
2-4 |
p. 679-683
5 p.
|
artikel
|
| 14 |
Carrier-diffusion-limited remote optical addressing of single quantum dots
|
Brun, M
|
|
2004
|
21 |
2-4 |
p. 219-222
4 p.
|
artikel
|
| 15 |
Carrier diffusion on atomically flat (110) GaAs quantum wells
|
Oh, Ji-Won
|
|
2004
|
21 |
2-4 |
p. 689-692
4 p.
|
artikel
|
| 16 |
Carrier tunneling in asymmetric coupled quantum dots
|
Sasakura, H
|
|
2004
|
21 |
2-4 |
p. 511-515
5 p.
|
artikel
|
| 17 |
Charging effects of ErAs islands embedded in AlGaAs heterostructures
|
Dorn, A.
|
|
2004
|
21 |
2-4 |
p. 426-429
4 p.
|
artikel
|
| 18 |
Commensurability magneto-resistance peaks in a lattice of diffusive scatterers
|
Renard, V
|
|
2004
|
21 |
2-4 |
p. 419-422
4 p.
|
artikel
|
| 19 |
Conductance anisotropy of high-mobility two-dimensional hole gas at GaAs/(Al,Ga)As(113)A single heterojunctions
|
Hey, R
|
|
2004
|
21 |
2-4 |
p. 737-741
5 p.
|
artikel
|
| 20 |
Conference Organization
|
|
|
2004
|
21 |
2-4 |
p. vi-vii
nvt p.
|
artikel
|
| 21 |
Conference Photo page
|
|
|
2004
|
21 |
2-4 |
p. iv-
1 p.
|
artikel
|
| 22 |
Confinement in self-assembled InAs/InP quantum wires studied by magneto-photoluminescence
|
Maes, J
|
|
2004
|
21 |
2-4 |
p. 261-264
4 p.
|
artikel
|
| 23 |
Contents
|
|
|
2004
|
21 |
2-4 |
p. ix-xxii
nvt p.
|
artikel
|
| 24 |
Controlled deposition of single DNA molecules on bare gold electrodes
|
Xiao, Zhanwen
|
|
2004
|
21 |
2-4 |
p. 1098-1101
4 p.
|
artikel
|
| 25 |
Controlled stacking growth of uniform InAs quantum dots by molecular beam epitaxy
|
Suzuki, Yasutaka
|
|
2004
|
21 |
2-4 |
p. 555-559
5 p.
|
artikel
|
| 26 |
Control of ferromagnetism in Mn delta-doped GaAs-based semiconductor heterostructures
|
Nazmul, Ahsan M
|
|
2004
|
21 |
2-4 |
p. 937-942
6 p.
|
artikel
|
| 27 |
Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions
|
Ohdaira, K
|
|
2004
|
21 |
2-4 |
p. 308-311
4 p.
|
artikel
|
| 28 |
Conventional and microwave-modulated Shubnikov–de Haas oscillations in GaN electron systems
|
Juang, J.R
|
|
2004
|
21 |
2-4 |
p. 631-635
5 p.
|
artikel
|
| 29 |
Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots
|
Hayne, M
|
|
2004
|
21 |
2-4 |
p. 189-192
4 p.
|
artikel
|
| 30 |
Coulomb blockade in triangular lateral small-size quantum dots
|
Tkachenko, V.A
|
|
2004
|
21 |
2-4 |
p. 469-473
5 p.
|
artikel
|
| 31 |
Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering
|
Susaki, Wataru
|
|
2004
|
21 |
2-4 |
p. 793-797
5 p.
|
artikel
|
| 32 |
3D hexagonal versus trigonal ordering in self-organized PbSe quantum dot superlattices
|
Lechner, R.T
|
|
2004
|
21 |
2-4 |
p. 611-614
4 p.
|
artikel
|
| 33 |
Diffuse X-ray scattering of InGaAs/GaAs quantum dots
|
Hanke, M
|
|
2004
|
21 |
2-4 |
p. 684-688
5 p.
|
artikel
|
| 34 |
Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry
|
Song, A.M
|
|
2004
|
21 |
2-4 |
p. 1116-1120
5 p.
|
artikel
|
| 35 |
Dynamics in magneto-optical properties of digital magnetic Zn1−x Cd x Se quantum wells
|
Nakayama, E
|
|
2004
|
21 |
2-4 |
p. 1027-1031
5 p.
|
artikel
|
| 36 |
Dynamics of optically stored charges in InGaAs quantum dots
|
Ducommun, Y
|
|
2004
|
21 |
2-4 |
p. 886-891
6 p.
|
artikel
|
| 37 |
Dynamics of single InGaN quantum dots
|
Taylor, R.A
|
|
2004
|
21 |
2-4 |
p. 285-289
5 p.
|
artikel
|
| 38 |
Effect of temperature on ballistic transport in InSb quantum wells
|
Goel, N
|
|
2004
|
21 |
2-4 |
p. 761-764
4 p.
|
artikel
|
| 39 |
Effects of multi-subband occupation and electric field in ferromagnetic semiconductor quantum wells
|
Souma, Satofumi
|
|
2004
|
21 |
2-4 |
p. 1037-1040
4 p.
|
artikel
|
| 40 |
Effects of the dark-exciton state on photoluminescence dynamics in surface-modified CdS quantum dots prepared by a colloidal method
|
Kim, DaeGwi
|
|
2004
|
21 |
2-4 |
p. 363-366
4 p.
|
artikel
|
| 41 |
Electrical manipulation of nuclear spins in quantum Hall devices
|
Machida, Tomoki
|
|
2004
|
21 |
2-4 |
p. 921-927
7 p.
|
artikel
|
| 42 |
Electric field control of exciton states in quantum dot molecules
|
Ortner, G
|
|
2004
|
21 |
2-4 |
p. 171-174
4 p.
|
artikel
|
| 43 |
Electroluminescence spectra of an STM-tip-induced quantum dot
|
Croitoru, M.D
|
|
2004
|
21 |
2-4 |
p. 270-274
5 p.
|
artikel
|
| 44 |
Electron g factor in a gated InGaAs channel with double InAs-inserted wells
|
Lin, Y.
|
|
2004
|
21 |
2-4 |
p. 656-660
5 p.
|
artikel
|
| 45 |
Electron–hole complexes in self-assembled quantum dots in strong magnetic fields
|
Cheng, S.J
|
|
2004
|
21 |
2-4 |
p. 211-214
4 p.
|
artikel
|
| 46 |
Electronic and magnetic properties of GaMnAs: annealing effects
|
Limmer, W.
|
|
2004
|
21 |
2-4 |
p. 970-974
5 p.
|
artikel
|
| 47 |
Electronic properties of semiconductor quantum dots for Coulomb blockade applications
|
Sée, J
|
|
2004
|
21 |
2-4 |
p. 496-500
5 p.
|
artikel
|
| 48 |
Electronic states of self-organized InGaAs quantum dots on GaAs (311)B studied by conductive scanning probe microscope
|
Oshima, R
|
|
2004
|
21 |
2-4 |
p. 414-418
5 p.
|
artikel
|
| 49 |
Electron spin dynamics in InGaAs quantum wells
|
Morita, K
|
|
2004
|
21 |
2-4 |
p. 1007-1011
5 p.
|
artikel
|
| 50 |
Electron spin resonance and nuclear spin pumping in 2DEG quantum Hall system
|
Teraoka, S
|
|
2004
|
21 |
2-4 |
p. 928-932
5 p.
|
artikel
|
| 51 |
Emission from neutral and charged excitons in a single quantum dot in a magnetic field
|
Schulhauser, C
|
|
2004
|
21 |
2-4 |
p. 184-188
5 p.
|
artikel
|
| 52 |
Energy levels of deposited carbon nanotubes
|
Ferreira, R
|
|
2004
|
21 |
2-4 |
p. 1079-1083
5 p.
|
artikel
|
| 53 |
Energy-selective charging of type-II GaSb/GaAs quantum dots
|
Geller, M
|
|
2004
|
21 |
2-4 |
p. 474-478
5 p.
|
artikel
|
| 54 |
Enhanced exciton–LO phonon coupling in doped quantum dots
|
Isaia, J.-N
|
|
2004
|
21 |
2-4 |
p. 400-404
5 p.
|
artikel
|
| 55 |
Enhanced photoluminescence of InGaAs quantum dots induced by nanoprobe indentation
|
Ozasa, Kazunari
|
|
2004
|
21 |
2-4 |
p. 265-269
5 p.
|
artikel
|
| 56 |
Enhanced radiative efficiency in blue (In,Ga)N multiple-quantum-well light-emitting diodes with an electron reservoir layer
|
Takahashi, Y
|
|
2004
|
21 |
2-4 |
p. 876-880
5 p.
|
artikel
|
| 57 |
Enhancement of the photoluminescence of silicon nanocrystals under the influence of electric field
|
Vandyshev, E.N
|
|
2004
|
21 |
2-4 |
p. 304-307
4 p.
|
artikel
|
| 58 |
Evidence for a type I to type II transition in (Ga,In)(N,As)/Ga(N,As) quantum well structures
|
Grüning, H
|
|
2004
|
21 |
2-4 |
p. 666-670
5 p.
|
artikel
|
| 59 |
Exciton fine structure splitting of single InGaAs self-assembled quantum dots
|
Högele, A
|
|
2004
|
21 |
2-4 |
p. 175-179
5 p.
|
artikel
|
| 60 |
Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure
|
Ono, K
|
|
2004
|
21 |
2-4 |
p. 698-702
5 p.
|
artikel
|
| 61 |
Exciton relaxation in self-assembled semiconductor quantum dots
|
Lelong, Ph
|
|
2004
|
21 |
2-4 |
p. 247-251
5 p.
|
artikel
|
| 62 |
Fabrication and microscopic characterization of a single quantum-wire laser with high uniformity
|
Yoshita, Masahiro
|
|
2004
|
21 |
2-4 |
p. 230-235
6 p.
|
artikel
|
| 63 |
Fabrication of double quantum dots by combining afm and e-beam lithography
|
Rogge, M.C
|
|
2004
|
21 |
2-4 |
p. 483-486
4 p.
|
artikel
|
| 64 |
Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure
|
Reuter, D
|
|
2004
|
21 |
2-4 |
p. 872-875
4 p.
|
artikel
|
| 65 |
Formation of high-density GaAs hexagonal nano-wire networks by selective MBE growth on pre-patterned (001) substrates
|
Tamai, Isao
|
|
2004
|
21 |
2-4 |
p. 521-526
6 p.
|
artikel
|
| 66 |
Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy
|
Bhunia, S
|
|
2004
|
21 |
2-4 |
p. 583-587
5 p.
|
artikel
|
| 67 |
Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots
|
Reuter, D.
|
|
2004
|
21 |
2-4 |
p. 445-450
6 p.
|
artikel
|
| 68 |
Gain of intersubband Raman lasing in modulation-doped asymmetric coupled double quantum wells
|
Maung, S.M
|
|
2004
|
21 |
2-4 |
p. 774-778
5 p.
|
artikel
|
| 69 |
GaN quantum dots by molecular beam epitaxy
|
Daudin, B
|
|
2004
|
21 |
2-4 |
p. 540-545
6 p.
|
artikel
|
| 70 |
Growth and magnetoresistance of epitaxial metallic MnAs/NiAs/MnAs trilayers on GaAs (001) substrates
|
Nakane, R
|
|
2004
|
21 |
2-4 |
p. 991-995
5 p.
|
artikel
|
| 71 |
Growth and optical characterization of dense arrays of site-controlled quantum dots grown in inverted pyramids
|
Watanabe, S
|
|
2004
|
21 |
2-4 |
p. 193-198
6 p.
|
artikel
|
| 72 |
Growth of high-density InGaSb quantum dots on silicon atoms irradiated GaAs substrates
|
Yamamoto, Naokatsu
|
|
2004
|
21 |
2-4 |
p. 322-325
4 p.
|
artikel
|
| 73 |
Growth process of quantum dots precisely controlled by an AFM-assisted technique
|
Song, H.Z
|
|
2004
|
21 |
2-4 |
p. 625-630
6 p.
|
artikel
|
| 74 |
Hall resistance hysteresis in AlGaN/GaN 2DEG
|
Tsubaki, K.
|
|
2004
|
21 |
2-4 |
p. 676-678
3 p.
|
artikel
|
| 75 |
High-field cyclotron resonance studies of InMnAs-based ferromagnetic semiconductor heterostructures
|
Khodaparast, G.A
|
|
2004
|
21 |
2-4 |
p. 978-982
5 p.
|
artikel
|
| 76 |
High-finesse optical quantum gates for electron spins in artificial molecules
|
Troiani, F
|
|
2004
|
21 |
2-4 |
p. 1061-1064
4 p.
|
artikel
|
| 77 |
Highly efficient radiative recombination of electron–hole pairs localized at compound semiconductor quantum dots embedded in Si
|
Jo, M
|
|
2004
|
21 |
2-4 |
p. 354-357
4 p.
|
artikel
|
| 78 |
High-quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and In x Al1−x Sb step-graded buffers
|
Sato, T
|
|
2004
|
21 |
2-4 |
p. 615-619
5 p.
|
artikel
|
| 79 |
Hole transport simulations in SiGe cascade quantum wells
|
Ikonić, Z
|
|
2004
|
21 |
2-4 |
p. 907-910
4 p.
|
artikel
|
| 80 |
Huang–Rhys side-bands in the emission line of a single InAs quantum dot
|
Favero, I
|
|
2004
|
21 |
2-4 |
p. 336-340
5 p.
|
artikel
|
| 81 |
Imaging of the (Mn2+3d5 + hole) complex in GaAs by cross-sectional scanning tunneling microscopy
|
Yakunin, A.M
|
|
2004
|
21 |
2-4 |
p. 947-950
4 p.
|
artikel
|
| 82 |
Impact of optical confinement on elastic polariton scattering in semiconductor microcavities
|
Schwab, M
|
|
2004
|
21 |
2-4 |
p. 825-829
5 p.
|
artikel
|
| 83 |
Imperfect electron transmission in perfect double-wall carbon nanotubes
|
Uryu, Seiji
|
|
2004
|
21 |
2-4 |
p. 1084-1088
5 p.
|
artikel
|
| 84 |
InAs/InP quantum dot microcavities employing dielectric Bragg mirrors
|
Dalacu, D
|
|
2004
|
21 |
2-4 |
p. 840-845
6 p.
|
artikel
|
| 85 |
Index of Authors and Papers
|
|
|
2004
|
21 |
2-4 |
p. 1131-1148
18 p.
|
artikel
|
| 86 |
Inelastic scattering processes in GaAs/n-AlGaAs selectively doped heterojunctions with InGaAs quantum dots
|
Kawazu, T
|
|
2004
|
21 |
2-4 |
p. 536-539
4 p.
|
artikel
|
| 87 |
Influence of bulk inversion asymmetry on the Datta–Das transistor
|
Łusakowski, A.
|
|
2004
|
21 |
2-4 |
p. 951-955
5 p.
|
artikel
|
| 88 |
Influence of strain on the magneto-exciton in single and coupled InP/GaInP quantum disks
|
Janssens, K.L
|
|
2004
|
21 |
2-4 |
p. 349-353
5 p.
|
artikel
|
| 89 |
InGaN quantum dots grown by MOVPE via a droplet epitaxy route
|
Rice, J.H
|
|
2004
|
21 |
2-4 |
p. 546-550
5 p.
|
artikel
|
| 90 |
Inside Front Cover/Editorial Board page
|
|
|
2004
|
21 |
2-4 |
p. IFC-
1 p.
|
artikel
|
| 91 |
Inter-miniband resonant Zener tunneling in wide-miniband GaAs/Al0.3Ga0.7As superlattices investigated by THz emission spectroscopy
|
Shimada, Y
|
|
2004
|
21 |
2-4 |
p. 661-665
5 p.
|
artikel
|
| 92 |
Internal electric field effect on luminescence properties of ZnO/(Mg,Zn)O quantum wells
|
Makino, T
|
|
2004
|
21 |
2-4 |
p. 671-675
5 p.
|
artikel
|
| 93 |
Interwire element of an impurity spectral function in coupled asymmetric quantum wires
|
Tavares, Marcos R.S
|
|
2004
|
21 |
2-4 |
p. 479-482
4 p.
|
artikel
|
| 94 |
Investigations of backscattering peaks and of the nature of the confining potential in open quantum dots
|
Brunner, R
|
|
2004
|
21 |
2-4 |
p. 491-495
5 p.
|
artikel
|
| 95 |
Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy
|
Jung, M
|
|
2004
|
21 |
2-4 |
p. 423-425
3 p.
|
artikel
|
| 96 |
Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−x Ga x As
|
Riedesel, C
|
|
2004
|
21 |
2-4 |
p. 592-596
5 p.
|
artikel
|
| 97 |
Light emission from the polythiophene derivative/ITO structure under electron beam excitation
|
Panin, G.N
|
|
2004
|
21 |
2-4 |
p. 1074-1078
5 p.
|
artikel
|
| 98 |
Light-emitting diodes based on GaMnAs/GaAs heterostructures
|
Teran, F.J
|
|
2004
|
21 |
2-4 |
p. 1002-1006
5 p.
|
artikel
|
| 99 |
Line-shape analysis of Franz–Keldysh oscillations from a base-emitter junction in an InGaP/GaAs heterojunction bipolar transistor structure
|
Takeuchi, H
|
|
2004
|
21 |
2-4 |
p. 693-697
5 p.
|
artikel
|
| 100 |
Liquid phase sensors based on chemically functionalized GaAs/AlGaAs heterostructures
|
Luber, S.M
|
|
2004
|
21 |
2-4 |
p. 1111-1115
5 p.
|
artikel
|
| 101 |
List of Authors
|
|
|
2004
|
21 |
2-4 |
p. xxiii-xxvii
nvt p.
|
artikel
|
| 102 |
Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition
|
Bormann, I
|
|
2004
|
21 |
2-4 |
p. 779-782
4 p.
|
artikel
|
| 103 |
Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates
|
Akahane, Kouichi
|
|
2004
|
21 |
2-4 |
p. 295-299
5 p.
|
artikel
|
| 104 |
Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates
|
Kudo, Makoto
|
|
2004
|
21 |
2-4 |
p. 275-278
4 p.
|
artikel
|
| 105 |
Magneto-optical properties and Curie temperature (∼130 K) of heavily Mn-doped quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InP
|
Ohya, Shinobu
|
|
2004
|
21 |
2-4 |
p. 975-977
3 p.
|
artikel
|
| 106 |
Magneto-photoluminescence study of InGaAs/InP and InGaAs/AlAsSb quantum wells
|
Mozume, T
|
|
2004
|
21 |
2-4 |
p. 703-707
5 p.
|
artikel
|
| 107 |
Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2
|
Hayne, M
|
|
2004
|
21 |
2-4 |
p. 257-260
4 p.
|
artikel
|
| 108 |
Magnetotransport of electrons in overfull quantum well
|
Kvon, Z.D
|
|
2004
|
21 |
2-4 |
p. 742-746
5 p.
|
artikel
|
| 109 |
Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain
|
Matsukura, F
|
|
2004
|
21 |
2-4 |
p. 1032-1036
5 p.
|
artikel
|
| 110 |
MBE growth and magnetic properties of InMnN diluted magnetic semiconductor
|
Chen, P.P
|
|
2004
|
21 |
2-4 |
p. 983-986
4 p.
|
artikel
|
| 111 |
MBE growth of AlGaAs on patterned GaAs substrates
|
Limmer, W
|
|
2004
|
21 |
2-4 |
p. 573-577
5 p.
|
artikel
|
| 112 |
Microfabrication of gold dots in SiO2/TiO2 glass films by two-photon absorption
|
Fukushima, M
|
|
2004
|
21 |
2-4 |
p. 456-459
4 p.
|
artikel
|
| 113 |
Mid infrared emission of quantum wire cascade structures
|
Schmult, S
|
|
2004
|
21 |
2-4 |
p. 223-229
7 p.
|
artikel
|
| 114 |
Mid-infrared luminescence from coupled quantum dots and wells
|
Shields, P.A
|
|
2004
|
21 |
2-4 |
p. 341-344
4 p.
|
artikel
|
| 115 |
Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors
|
Hossain, Faruque M
|
|
2004
|
21 |
2-4 |
p. 911-915
5 p.
|
artikel
|
| 116 |
Modulation of photonic crystals by surface acoustic waves
|
de Lima Jr., M.M
|
|
2004
|
21 |
2-4 |
p. 809-813
5 p.
|
artikel
|
| 117 |
MOVPE grown quantum cascade lasers
|
Green, Richard
|
|
2004
|
21 |
2-4 |
p. 863-866
4 p.
|
artikel
|
| 118 |
Nano-probe-assisted technology of indium-nano-dot formation for site-controlled InAs/GaAs quantum dots
|
Ohkouchi, S
|
|
2004
|
21 |
2-4 |
p. 597-600
4 p.
|
artikel
|
| 119 |
Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys
|
Mintairov, A.M
|
|
2004
|
21 |
2-4 |
p. 385-389
5 p.
|
artikel
|
| 120 |
Nonequilibrium Green's function approach to resonant transport in semiconductor superlattices
|
Mori, N
|
|
2004
|
21 |
2-4 |
p. 717-721
5 p.
|
artikel
|
| 121 |
Nonlinear emission from II–VI photonic dots in the strong coupling regime
|
Obert, M
|
|
2004
|
21 |
2-4 |
p. 835-839
5 p.
|
artikel
|
| 122 |
Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots
|
Haendel, K.-M
|
|
2004
|
21 |
2-4 |
p. 487-490
4 p.
|
artikel
|
| 123 |
Non-perturbative optical response of a “fluctuating” single quantum dot
|
Jankovic, A
|
|
2004
|
21 |
2-4 |
p. 252-256
5 p.
|
artikel
|
| 124 |
Not-step-like density of states and carrier distribution of conduction-band, narrow-to-wide dilute magnetic semiconductor quantum wells under in-plane magnetic field
|
Simserides, Constantinos
|
|
2004
|
21 |
2-4 |
p. 956-960
5 p.
|
artikel
|
| 125 |
Numerical analysis of DFB lasing action in photonic crystals with quantum dots
|
Iwamoto, S
|
|
2004
|
21 |
2-4 |
p. 814-819
6 p.
|
artikel
|
| 126 |
Observation of clear negative differential resistance characteristics in GaAsNSe/GaAs and GaAsNSb/GaAs multiple quantum wells at room temperature
|
Uesugi, K
|
|
2004
|
21 |
2-4 |
p. 727-731
5 p.
|
artikel
|
| 127 |
Observation of monolayer-splitting for InAs/GaAs quantum dots
|
Guffarth, F
|
|
2004
|
21 |
2-4 |
p. 326-330
5 p.
|
artikel
|
| 128 |
Observation of optical transition energy in ZnSe/tris(8-hydroxyquinoline) aluminum (Alq3)/ZnSe single quantum wells by photoreflectance spectroscopy
|
Nukeaw, J
|
|
2004
|
21 |
2-4 |
p. 1070-1073
4 p.
|
artikel
|
| 129 |
Observation of reflection high-energy electron diffraction oscillation during MOMBE growth of AlAs and related modulated semiconductor structures
|
Ganapathy, Sasikala
|
|
2004
|
21 |
2-4 |
p. 756-760
5 p.
|
artikel
|
| 130 |
One-dimensional single (In,Ga)As quantum dot arrays formed by self-organized anisotropic strain engineering
|
Mano, T
|
|
2004
|
21 |
2-4 |
p. 568-572
5 p.
|
artikel
|
| 131 |
Optical and transport studies in coupled InAs quantum dots embedded in GaAs
|
Inada, M
|
|
2004
|
21 |
2-4 |
p. 317-321
5 p.
|
artikel
|
| 132 |
Optical properties of core/multishell CdSe/Zn(S,Se) nanocrystals
|
Bleuse, Joël
|
|
2004
|
21 |
2-4 |
p. 331-335
5 p.
|
artikel
|
| 133 |
Optical properties of excitonic polarons in semiconductor quantum dots
|
Ferreira, R
|
|
2004
|
21 |
2-4 |
p. 164-170
7 p.
|
artikel
|
| 134 |
Optical spectroscopy of single InAs/InP quantum dots around λ=1.55 μm
|
Chithrani, D
|
|
2004
|
21 |
2-4 |
p. 290-294
5 p.
|
artikel
|
| 135 |
Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots
|
Kalevich, V.K
|
|
2004
|
21 |
2-4 |
p. 1018-1021
4 p.
|
artikel
|
| 136 |
Optimization of the extraordinary magnetoresistance in semiconductor–metal hybrid structures for magnetic-field sensor applications
|
Holz, M
|
|
2004
|
21 |
2-4 |
p. 897-900
4 p.
|
artikel
|
| 137 |
Phonons in Ge/Si quantum dot structures: influence of growth temperature
|
Milekhin, A.G
|
|
2004
|
21 |
2-4 |
p. 464-468
5 p.
|
artikel
|
| 138 |
Photocurrent spectroscopy of a (0001)GaN/AlGaN/(111)Si heterostructure
|
Kuroiwa, Y
|
|
2004
|
21 |
2-4 |
p. 787-792
6 p.
|
artikel
|
| 139 |
Photo-induced anomalous Hall effect in GaAs:MnAs granular films
|
Ogawa, T
|
|
2004
|
21 |
2-4 |
p. 1041-1045
5 p.
|
artikel
|
| 140 |
Photo-induced magnetic-solitons in diluted magnetic semiconductors
|
Kanazawa, I
|
|
2004
|
21 |
2-4 |
p. 961-965
5 p.
|
artikel
|
| 141 |
Photo-induced magnetization rotation in III–V ferromagnetic alloy semiconductor quantum wells
|
Kashimura, Y
|
|
2004
|
21 |
2-4 |
p. 987-990
4 p.
|
artikel
|
| 142 |
Photoreflectance characterization of GaAs/AlAs quantum wells with (411)A super-flat interfaces grown by molecular beam epitaxy
|
Kitada, T
|
|
2004
|
21 |
2-4 |
p. 722-726
5 p.
|
artikel
|
| 143 |
Physics and characteristics of a lateral p–n junction tunneling transistor
|
Vyurkov, Vladimir
|
|
2004
|
21 |
2-4 |
p. 867-871
5 p.
|
artikel
|
| 144 |
Polariton parametric amplifier coherent dynamics
|
Tignon, J
|
|
2004
|
21 |
2-4 |
p. 820-824
5 p.
|
artikel
|
| 145 |
Polarization selective magneto-optical study on the coupled quantum dots using resonant excitation
|
Lee, S
|
|
2004
|
21 |
2-4 |
p. 376-380
5 p.
|
artikel
|
| 146 |
Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots
|
Zibik, E.A
|
|
2004
|
21 |
2-4 |
p. 405-408
4 p.
|
artikel
|
| 147 |
Preface
|
Arakawa, Yasuhiko
|
|
2004
|
21 |
2-4 |
p. v-
1 p.
|
artikel
|
| 148 |
Probing the N-induced states in dilute GaAsN alloys by magneto-tunnelling
|
Endicott, J
|
|
2004
|
21 |
2-4 |
p. 892-896
5 p.
|
artikel
|
| 149 |
Proceedings of the 11th International Conference on Modulated Semiconductor Structures
|
Arakawa, Y.
|
|
2004
|
21 |
2-4 |
p. iii-
1 p.
|
artikel
|
| 150 |
Quantized transport in ballistic rectifiers: sign reversal and step-like output
|
de Haan, S
|
|
2004
|
21 |
2-4 |
p. 916-920
5 p.
|
artikel
|
| 151 |
Quantum beat of strain-induced GaAs quantum dots
|
Masumoto, Yasuaki
|
|
2004
|
21 |
2-4 |
p. 1012-1017
6 p.
|
artikel
|
| 152 |
Quantum coherence and formation of quantized states in semiconductors
|
Morifuji, Masato
|
|
2004
|
21 |
2-4 |
p. 1126-1130
5 p.
|
artikel
|
| 153 |
Quantum dot arrays prepared with self-organized nanopore and its photoluminescence spectra
|
Imai, T
|
|
2004
|
21 |
2-4 |
p. 1093-1097
5 p.
|
artikel
|
| 154 |
Quantum-mechanical displacement sensing using InAs/AlGaSb micromechanical cantilevers
|
Yamaguchi, H
|
|
2004
|
21 |
2-4 |
p. 1053-1056
4 p.
|
artikel
|
| 155 |
Rashba effect in gated InGaAs/InP quantum wire structures
|
Schäpers, Th
|
|
2004
|
21 |
2-4 |
p. 933-936
4 p.
|
artikel
|
| 156 |
Real-time dynamics of the acoustically driven electron–hole transport in GaAs quantum wires
|
Alsina, F
|
|
2004
|
21 |
2-4 |
p. 430-434
5 p.
|
artikel
|
| 157 |
Recent developments in the physics and applications of self-assembled quantum dots
|
Skolnick, M.S
|
|
2004
|
21 |
2-4 |
p. 155-163
9 p.
|
artikel
|
| 158 |
Recombination process of CdS quantum dot covered by novel polymer chains
|
Umezu, I
|
|
2004
|
21 |
2-4 |
p. 1102-1105
4 p.
|
artikel
|
| 159 |
Regular array of InGaAs quantum dots with 100-nm-periodicity formed on patterned GaAs substrates
|
Nakamura, Y
|
|
2004
|
21 |
2-4 |
p. 551-554
4 p.
|
artikel
|
| 160 |
Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
|
Belyaev, A.E
|
|
2004
|
21 |
2-4 |
p. 752-755
4 p.
|
artikel
|
| 161 |
Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
|
Bougeard, D
|
|
2004
|
21 |
2-4 |
p. 312-316
5 p.
|
artikel
|
| 162 |
Ripening of self-organized InAs quantum dots
|
Pötschke, K
|
|
2004
|
21 |
2-4 |
p. 606-610
5 p.
|
artikel
|
| 163 |
Rotation and phase-shift operations for a charge qubit in a double quantum dot
|
Fujisawa, Toshimasa
|
|
2004
|
21 |
2-4 |
p. 1046-1052
7 p.
|
artikel
|
| 164 |
Scanning gate measurements in the quantum Hall regime at 300 mK
|
Kičin, S
|
|
2004
|
21 |
2-4 |
p. 708-711
4 p.
|
artikel
|
| 165 |
Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals
|
Inari, Masaru
|
|
2004
|
21 |
2-4 |
p. 620-624
5 p.
|
artikel
|
| 166 |
Selective excitation of self-assembled quantum dots by using shaped pulse
|
Toda, Y
|
|
2004
|
21 |
2-4 |
p. 180-183
4 p.
|
artikel
|
| 167 |
Selective growth of ZnO nanodots prepared by metalorganic chemical vapor deposition on focused-ion beam-nanopatterned substrates
|
Kim, Sang-Woo
|
|
2004
|
21 |
2-4 |
p. 601-605
5 p.
|
artikel
|
| 168 |
Semiconductor nanowires for novel one-dimensional devices
|
Samuelson, L
|
|
2004
|
21 |
2-4 |
p. 560-567
8 p.
|
artikel
|
| 169 |
Semiconductor photonic crystals for optoelectronics
|
Kamp, M
|
|
2004
|
21 |
2-4 |
p. 802-808
7 p.
|
artikel
|
| 170 |
Simulation study on strain-mediated coarsening of quantum dots
|
Enomoto, Yoshihisa
|
|
2004
|
21 |
2-4 |
p. 1121-1125
5 p.
|
artikel
|
| 171 |
Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots
|
Osborn, K.D
|
|
2004
|
21 |
2-4 |
p. 501-505
5 p.
|
artikel
|
| 172 |
Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar
|
Sato, T
|
|
2004
|
21 |
2-4 |
p. 506-510
5 p.
|
artikel
|
| 173 |
Single quantum dot electroluminescence near 1.3 μm
|
Ward, M.B
|
|
2004
|
21 |
2-4 |
p. 390-394
5 p.
|
artikel
|
| 174 |
Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si
|
Koh, S
|
|
2004
|
21 |
2-4 |
p. 440-444
5 p.
|
artikel
|
| 175 |
Spectral hole burning in self-organized quantum dots
|
Heitz, R
|
|
2004
|
21 |
2-4 |
p. 215-218
4 p.
|
artikel
|
| 176 |
Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides
|
Lucovsky, G
|
|
2004
|
21 |
2-4 |
p. 712-716
5 p.
|
artikel
|
| 177 |
Spectroscopy of individual AlGaAs microdisks in large periodic arrays
|
Kipp, T
|
|
2004
|
21 |
2-4 |
p. 830-834
5 p.
|
artikel
|
| 178 |
Spectroscopy on single columns of vertically aligned InAs quantum dots
|
Nakaoka, T
|
|
2004
|
21 |
2-4 |
p. 409-413
5 p.
|
artikel
|
| 179 |
Spin engineering of carrier-induced magnetic ordering in (Cd,Mn)Te quantum wells
|
Kossacki, P
|
|
2004
|
21 |
2-4 |
p. 943-946
4 p.
|
artikel
|
| 180 |
Standing acoustic waves imaged by a nanomechanical resonator
|
Beil, F.W
|
|
2004
|
21 |
2-4 |
p. 1106-1110
5 p.
|
artikel
|
| 181 |
Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures
|
Schuster, R
|
|
2004
|
21 |
2-4 |
p. 236-240
5 p.
|
artikel
|
| 182 |
Strong photoluminescence emission from an excited-subband exciton state in a GaAs/Al x Ga1−x As triple quantum well with different well thicknesses
|
Satake, A
|
|
2004
|
21 |
2-4 |
p. 641-645
5 p.
|
artikel
|
| 183 |
Structural and optical properties of high-density (>1011/cm2) InAs QDs with varying Al(Ga)As matrix layer thickness
|
Park, S.K
|
|
2004
|
21 |
2-4 |
p. 279-284
6 p.
|
artikel
|
| 184 |
Structural defects in InSb/Al x In1−x Sb quantum wells grown on GaAs (001) substrates
|
Mishima, T.D
|
|
2004
|
21 |
2-4 |
p. 770-773
4 p.
|
artikel
|
| 185 |
Subband population and current instabilities in GaAs/(Al,Ga)As quantum-cascade structures
|
Schrottke, L
|
|
2004
|
21 |
2-4 |
p. 852-857
6 p.
|
artikel
|
| 186 |
Subject Index
|
|
|
2004
|
21 |
2-4 |
p. 1149-1153
5 p.
|
artikel
|
| 187 |
Subpicosecond dynamical renormalization of spin-polarized electron–hole plasma in Cd1−x Mn xTe
|
Chen, Z.H
|
|
2004
|
21 |
2-4 |
p. 1022-1026
5 p.
|
artikel
|
| 188 |
Successful growth of two different quantum dots on one substrate
|
Tsai, C.F
|
|
2004
|
21 |
2-4 |
p. 372-375
4 p.
|
artikel
|
| 189 |
Surface integral determination of built-in electric fields and analysis of exciton binding energies in nitride-based quantum dots
|
Williams, D.P
|
|
2004
|
21 |
2-4 |
p. 358-362
5 p.
|
artikel
|
| 190 |
Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
|
Finley, J.J
|
|
2004
|
21 |
2-4 |
p. 199-203
5 p.
|
artikel
|
| 191 |
Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes
|
Bakmiwewa, P
|
|
2004
|
21 |
2-4 |
p. 636-640
5 p.
|
artikel
|
| 192 |
Terahertz quantum cascade lasers
|
Tredicucci, A
|
|
2004
|
21 |
2-4 |
p. 846-851
6 p.
|
artikel
|
| 193 |
Theory of electron mobility in dilute nitride semiconductors
|
Fahy, S
|
|
2004
|
21 |
2-4 |
p. 881-885
5 p.
|
artikel
|
| 194 |
Theory of excitons, charged excitons, exciton fine-structure and entangled excitons in self-assembled semiconductor quantum dots
|
Zunger, Alex
|
|
2004
|
21 |
2-4 |
p. 204-210
7 p.
|
artikel
|
| 195 |
The simulation study for the nanometer-scale selective growth of Si islands on Si(001) windows in ultrathin SiO2 films
|
Ishii, A
|
|
2004
|
21 |
2-4 |
p. 578-582
5 p.
|
artikel
|
| 196 |
Time-resolved photoluminescence spectra of high-density InGaAs/AlGaAs quantum wire structures
|
Tsurumachi, Noriaki
|
|
2004
|
21 |
2-4 |
p. 300-303
4 p.
|
artikel
|
| 197 |
Time-resolved studies of single quantum dots in magnetic fields
|
Stevenson, R.M
|
|
2004
|
21 |
2-4 |
p. 381-384
4 p.
|
artikel
|
| 198 |
Transport measurements through stacked InAs self-assembled quantum dots in time domain
|
Jun, M.S
|
|
2004
|
21 |
2-4 |
p. 460-463
4 p.
|
artikel
|
| 199 |
Transport properties of C78, C90 and Dy@C82 fullerenes-nanopeapods by field effect transistors
|
Shimada, Takashi
|
|
2004
|
21 |
2-4 |
p. 1089-1092
4 p.
|
artikel
|
| 200 |
Tunable quantum dot resonator embedded in a quantum wire
|
Yokoyama, H
|
|
2004
|
21 |
2-4 |
p. 527-531
5 p.
|
artikel
|
| 201 |
Tuning of the electron effective mass and exciton wavefunction size in GaAs1−x N x
|
Polimeni, A
|
|
2004
|
21 |
2-4 |
p. 747-751
5 p.
|
artikel
|
| 202 |
Tuning of transmission function and tunneling time in finite periodic potentials
|
Pacher, C
|
|
2004
|
21 |
2-4 |
p. 783-786
4 p.
|
artikel
|
| 203 |
Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier
|
Chiba, D
|
|
2004
|
21 |
2-4 |
p. 966-969
4 p.
|
artikel
|
| 204 |
Two-dimensional lateral ordering of self-assembled Ge islands on patterned substrates
|
Zhong, Zhenyang
|
|
2004
|
21 |
2-4 |
p. 588-591
4 p.
|
artikel
|
| 205 |
Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures
|
Kähler, Dirk
|
|
2004
|
21 |
2-4 |
p. 435-439
5 p.
|
artikel
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